TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
1
DC - 10.5 GHz Discrete HFET TGF4250-SCC
Key Features and Performance
• Nominal Pout of 34 dBm at 8.5 GHz
• Nominal Gain of 8.5 dB at 8.5 GHz
• Nominal PAE of 53% at 8.5 GHz
• Suitable for high reliability applications
• 4800 µm x 0.5 µm FET
• Chip dimensions: 0.61 x 1.37 x 0.1 mm
(0.024 x 0.054 x 0.004 in)
• Bias at 8 Volts, 384 mA
Description
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34
dBm power output, 13 dB gain, and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes. The TGF4250-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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TABLE I
MAXIMUM RATINGS
SYMBOL PARAMETER 1/ VALUE NOTES
VDS Drain to Source Voltage 12 V
VGS Gate to Source Voltage Range 0 to -5.0 Volts
PDPower Dissipation See Thermal Data
TCH Operating Channel Temperature 150°C2/, 3/
TSTG Storage Temperature -65 to 200°C
TMMounting Temperature (30 seconds) 320°C
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” and “RF Probe Characteristics” is not
implied. Exposure to maximum rated conditions for extended periods may affect device
reliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/ These ratings apply to each individual FET
TGF4250-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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TGF4250-SCC
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 °C, Nominal)
Symbol Parameter Minimum Typical Maximum Unit Note
IDSS Saturated Drain Current -- 1176 -- mA 1/
GMTransconductance -- 792 -- mS 1/
VPPinch-off Voltage 1 1.85 3 V 2/
VBGS Breakdown Voltage
Gate-Source
17 22 30 V 2/
VBGD Breakdown Voltage
Gate-Drain
17 22 30 V 2/
1/ Total for Four FETS
2/ VP, VBGS, and VBGD are negative.
TABLE III
ELECTRICAL CHARACTERISTICS
(TA = 25 °C, Nominal)
Bias Conditions: Vd = 8V, Id = 200mA +/- 10%
Symbol Parameter Typical Unit
Pout Output Power 34 dBm
Gp Power Gain 8.5 dB
PAE Power Added Efficiency 53 %
Note: The recommended bias current for HFETs is 80 mA/mm. For this
4.8 mm HFET IQ is 384 mA.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
4
TGF4250-SCC
TA=25°C
TYPICAL PERFORMANCE
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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TGF4250-SCC
TYPICAL PERFORMANCE
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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TGF4250-SCC
THERMAL INFORMATION
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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TGF4250-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TGF4250-SCC
Mechanical Drawing
**
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*
*
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
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Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
· Maximum stage temperature is 200 °C.
TGF4250-SCC
Note: Die are shipped in gel pack unless otherwise specified.
