TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright (c) 1997, Power Innovations Limited, UK 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 A APRIL 1971 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC106D Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage TIC106M TIC106S VALUE VDRM 600 700 TIC106N 800 TIC106D 400 TIC106M TIC106S VRRM Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) 600 700 V V 800 TIC106N Continuous on-state current at (or below) 80C case temperature (see Note 2) UNIT 400 IT(RMS) 5 A IT(AV) 3.2 A A Surge on-state current (see Note 4) ITM 30 Peak positive gate current (pulse width 300 s) IGM 0.2 A Peak gate power dissipation (pulse width 300 s) PGM 1.3 W PG(AV) 0.3 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Average gate power dissipation (see Note 5) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT VGT IH TEST CONDITIONS Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Gate trigger voltage MIN TYP RGK = 1 k TC = 110C 400 A VR = rated VRRM IG = 0 TC = 110C 1 mA 200 A VAA = 6 V RL = 100 tp(g) 20 s VAA = 6 V RL = 100 TC = - 40C tp(g) 20 s RGK = 1 k VAA = 6 V RL = 100 tp(g) 20 s RGK = 1 k VAA = 6 V RL = 100 tp(g) 20 s RGK = 1 k VAA = 6 V RGK = 1 k 60 1.2 0.4 TC = 110C 0.6 TC = - 40C dv/dt NOTE voltage Critical rate of rise of off-state voltage ITM = 5 A (See Note 6) VD = rated VD RGK = 1 k V 8 mA 5 Initiating IT = 10 mA V TM 1 0.2 RGK = 1 k VAA = 6 V Peak on-state UNIT VD = rated VDRM Initiating IT = 10 mA Holding current MAX 1.7 TC = 110C 10 V V/s 6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 3.5 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER tgt tq Gate-controlled MIN IT = 5 A IG = 10 mA See Figure 1 Circuit-commutated IT = 5 A IG = 10 mA See Figure 2 turn-off time IRM = 8 A turn-on time PRODUCT 2 TEST CONDITIONS INFORMATION TYP 1.75 s 7.7 s TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 30 V 6 IT VG VA 10% t gt DUT RG G VG VA IG 90% PMC1AA Figure 1. Gate-controlled turn-on time 30 V 6 0.1 F to 0.5 F R2 IA R1 VA DUT TH1 RG RG G1 V G1 VK (IRM Monitor) IG IG 0.1 V G2 NOTES: A. Resistor R1 is adjusted for the specified value of I RM . B. Resistor R2 value is 30/IH , where I H is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: tP = 50 s to 300 s G2 duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G , of 20 V and duration of 10 s to 20 s. G2 t P Synchronisation V G1 V G2 IT IA tP 0 IRM VA VT 0 tq PMC1AB Figure 2. Circuit-commutated turn-off time PRODUCT INFORMATION 3 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS IT(AV) - Maximum Average Anode Forward Current - A DERATING CURVE TI20AA 6 Continuous DC 5 4 = 180 3 2 0 180 Conduction 1 Angle 0 30 50 60 70 80 90 100 TJ = 110C 10 110 1 10 100 TC - Case Temperature - C IT - Continuous On-State Current - A Figure 3. Figure 4. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI20AC No Prior Device Conduction Gate Control Guaranteed 10 1 TI20AD 10 RJC(t) - Transient Thermal Resistance - C/W TC 80 C ITM - Peak Half-Sine-Wave Current - A TI20AB 100 1 40 100 1 0*1 1 10 100 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 5. Figure 6. PRODUCT 4 MAX CONTINUOUS ANODE POWER DISSIPATED vs CONTINUOUS ON-STATE CURRENT PA - Max Continuous Anode Power Dissipated - W AVERAGE ANODE ON-STATE CURRENT INFORMATION 100 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE GATE TRIGGER VOLTAGE vs CASE TEMPERATURE TC20AA VAA = 6 V VAA = 6 V RL = 100 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - A TC20AB 1 tp(g) 20 s 100 RL = 100 0*8 RGK = 1 k tp(g) 20 s 0*6 0*4 0*2 10 -50 -25 0 25 50 75 -25 0 25 50 75 TC - Case Temperature - C Figure 7. Figure 8. GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT HOLDING CURRENT vs CASE TEMPERATURE TC20AC IA = 0 TC = 25 C tp = 300 s Duty Cycle 2 % 1 10 125 TC20AD RGK = 1 k IH - Holding Current - mA Initiating IT = 10 mA 10 100 1000 1 -50 -25 0 25 50 75 IGF - Gate Forward Current - mA TC - Case Temperature - C Figure 9. Figure 10. PRODUCT 100 VAA = 6 V 1 0*1 0*1 0 -50 125 TC - Case Temperature - C 10 VGF - Gate Forward Voltage - V 100 100 125 INFORMATION 5 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT GATE-CONTROLLED TURN-ON TIME vs GATE CURRENT TC20AE 2.5 TC20AF 10.0 2.0 tgt - Gate-Controlled Turn-On Time - s VTM - Peak On-State Voltage - V VAA = 30 V TC = 25 C tp = 300 s Duty Cycle 2 % 1.5 1.0 0.5 0.0 0*1 1 RL = 6 8.0 TC = 25 C See Test Circuit and Waveforms 6.0 4.0 2.0 0.0 0*1 10 1 ITM - Peak On-State Current - A IG - Gate Current - mA Figure 11. Figure 12. CIRCUIT-COMMUTATED TURN-OFF TIME vs CASE TEMPERATURE TC20AG t q - Circuit-Commutated Turn-Off Time - s 16 14 12 VAA = 30 V RL = 6 IRM 8 A See Test Circuit and Waveforms 10 8 6 4 2 0 20 40 60 80 100 TC - Case Temperature - C Figure 13. PRODUCT 6 INFORMATION 120 10 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 7 TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT 8 INFORMATION