TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
35 GHz 5-Bit Phase Shifter TGP2102-EPU
Key Features and Performance
• Frequency Range: 32 - 37 GHz
• 7dB Nominal Insertion Loss
• 3.5deg RMS Phase Error @ 35GHz
• 0.4dB RMS Amp. Error @ 35GHz
• Negative Control Voltage
• Single-Ended Logic
• 0.25µm pHEMT 3MI Technology
• Chip dimensions:
1.88 x 0.75 x 0.1 mm
(0.074 x 0.030 x 0.004 inches)
Preliminary Measured Performance
0
1
2
3
4
5
6
7
8
9
10
31 32 33 34 35 36 37
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
-20
-15
-10
-5
0
5
10
15
20
1 3 5 7 9 1113151719212325272931
State
Phase Error (deg)
31GHz 32GHz
33GHz 34GHz
35GHz 36GHz
37GHz
Primary Applications
• Military Radar
• Transmit / Receive
Description
The TriQuint TGP2102-EPU is a 5-bit
digital phase shifter MMIC design using
TriQuint’s proven 0.25µm power pHEMT
process to support a variety of Ka-Band
phased array applications including
military radar.
The 5-bit design utilizes a compact
topology that achieves a 1.41mm2 die
area and high performance.
The TGP2102-EPU provides a 5-bit
digital phase shift function with a nominal
7dB insertion loss and 5° RMS phase
shift error over a bandwidth of 32-37GHz.
The TGP2102-EPU requires a minimum
of off-chip components and operates with
a -5V control voltage. Each device is RF
tested on-wafer to ensure performance
compliance. The device is available in
chip form.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGP2102-EPU
TABLE I
MAXIMUM RATINGS
Symbol Parameter Value Notes
VCControl Voltage Range -8V to 0V 1/ 2/
IDControl Supply Current 1 mA 1/ 2/
PIN Input Continuous Wave Power 20 dBm 1/ 2/
PDPower Dissipation 0.1 W 1/ 2/
TCH Operating Channel Temperature 150 0C3/
TMMounting Temperature
(30 Seconds)
320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD at a package base temperature of 70°C
3/ Junction operating temperature will directly affect the device median time to failure
(MTTF). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal)
(VC = -5V)
Parameter Test
Conditions
Typ Units Notes
Insertion Loss 32 – 37GHz 7 dB
Peak Amplitude Error 32 – 37GHz 1 dB
RMS Amplitude Error 32 – 37GHz 0.7 dB
Peak Phase Shift Error 32 – 37GHz 5 deg
RMS Phase Shift Error 32 – 37GHz 4 deg
Input Return Loss 32 – 37GHz 14 dB
Output Return Loss 32 – 37GHz 7 dB
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Preliminary Measured Data
TGP2102-EPU
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
31 32 33 34 35 36 37
Frequency (GHz)
S21 (dB)
0
1
2
3
4
5
6
7
8
9
10
31 32 33 34 35 36 37
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Preliminary Measured Data
TGP2102-EPU
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
31 32 33 34 35 36 37
Frequency (GHz)
S11 (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
31 32 33 34 35 36 37
Frequency (GHz)
S22 (dB)
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGP2102-EPU
-20
-15
-10
-5
0
5
10
15
20
135791113151719212325272931
State
Phase Error (deg)
31GHz 32GHz
33GHz 34GHz
35GHz 36GHz
37GHz
Preliminary Measured Data
-5
-4
-3
-2
-1
0
1
2
3
4
5
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31
State
Amplitude Error (dB)
31GHz 32GHz
33GHz 34GHz
35GHz 36GHz
37GHz
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
State Table
TGP2102-EPU
State
V
-Supply
V
-11.25
V
-22.5
V
-45
V
-90
V
-180 Phase Shift
0 -5V 0V 0V 0V 0V 0V Reference
1 -5V-5V0V0V0V0V11.25°
2 -5V 0V -5V 0V 0V 0V 22.5°
3 -5V -5V -5V 0V 0V 0V 33.75°
4 -5V 0V 0V -5V 0V 0V 45°
5 -5V -5V 0V -5V 0V 0V 56.25°
6 -5V 0V -5V -5V 0V 0V 67.5°
7 -5V -5V -5V -5V 0V 0V 78.75°
8 -5V 0V 0V 0V -5V 0V 90°
9 -5V -5V 0V 0V -5V 0V 101.25°
10 -5V 0V -5V 0V -5V 0V 112.5°
11 -5V -5V -5V 0V -5V 0V 123.75°
12 -5V 0V 0V -5V -5V 0V 135°
13 -5V -5V 0V -5V -5V 0V 146.25°
14 -5V 0V -5V -5V -5V 0V 157.5°
15 -5V -5V -5V -5V -5V 0V 168.75°
16 -5V 0V 0V 0V 0V -5V 180°
17 -5V -5V 0V 0V 0V -5V 191.25°
18 -5V 0V -5V 0V 0V -5V 202.5°
19 -5V -5V -5V 0V 0V -5V 213.75°
20 -5V 0V 0V -5V 0V -5V 225°
21 -5V -5V 0V -5V 0V -5V 236.25°
22 -5V 0V -5V -5V 0V -5V 247.5°
23 -5V -5V -5V -5V 0V -5V 258.75°
24 -5V 0V 0V 0V -5V -5V 270°
25 -5V -5V 0V 0V -5V -5V 281.25°
26 -5V 0V -5V 0V -5V -5V 292.5°
27 -5V -5V -5V 0V -5V -5V 303.75°
28 -5V 0V 0V -5V -5V -5V 315°
29 -5V -5V 0V -5V -5V -5V 326.25°
30 -5V 0V -5V -5V -5V -5V 337.5°
31 -5V -5V -5V -5V -5V -5V 348.75°
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGP2102-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly & Bonding Diagram
TGP2102-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
TGP2102-EPU
