2N6473 2N6474 NPN
2N6475 2N6476 PNP
COMPLEMENTARY
SILICON SWITCHING TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6473, 2N6475
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
2N6473 2N6474
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6475 2N6476 UNITS
Collector-Base Voltage VCBO 110 130 V
Collector-Emitter Voltage (RBE=100Ω) VCER 110 130 V
Collector-Emitter Voltage VCEO 100 120 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 4.0 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 40 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 3.125 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6473 2N6474
2N6475 2N6476
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=Rated VCEO, VBE=1.5V - 100 - 100 μA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=100°C - 2.0 - 2.0 mA
ICER V
CE=Rated VCER, RBE=100Ω - 100 - 100 μA
ICER V
CE=Rated VCER, RBE=100Ω, TC=100°C - 2.0 - 2.0 mA
ICEO V
CE=1/2 Rated VCEO - 1.0 - 1.0 mA
IEBO V
EB=5.0V - 1.0 - 1.0 mA
BVCEO I
C=100mA 100 - 120 - V
BVCER I
C=100mA, RBE=100Ω 110 - 130 - V
VCE(SAT) I
C=1.5A, IB=0.15A - 1.2 - 1.2 V
VCE(SAT) I
C=4.0A, IB=2.0A - 2.5 - 2.5 V
VBE(ON) V
CE=4.0V, IC=1.5A - 2.0 - 2.0 V
VBE(ON) V
CE=2.5V, IC=4.0A - 3.5 - 3.5 V
hFE V
CE=4.0V, IC=1.5A 15 150 15 150
hFE V
CE=2.5V, IC=4.0A 2.0 - 2.0 -
hfe V
CE=4.0V, IC=0.5A, f=50kHz 20 - 20 -
fT V
CE=4.0V, IC=0.5A (2N6473, 2N6474) 4.0 - 4.0 - MHz
fT V
CE=4.0V, IC=0.5A (2N6475, 2N6476) 5.0 - 5.0 - MHz
Cob V
CB=10V, f=1.0MHz - 250 - 250 pF
TO-220 CASE
R1 (1-May 2013)
www.centralsemi.com
2N6473 2N6474 NPN
2N6475 2N6476 PNP
COMPLEMENTARY
SILICON SWITCHING TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (1-May 2013)
