IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy. By operating this image sensor in MPP mode, the dark signal can be exceedingly reduced. Moreover, use of the low-noise readout amplifier enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S7019-1009 has an effective pixel size of 24 x 24 m and is available in active area of 24.576 (H) x 12.288 (V) mm. Features Applications 1024 (H) x 512 (V) pixel format Pixel size: 24 x 24 m Wide dynamic range Low dark current Low readout noise MPP operation Astronomy Scientific measuring instrument Fluorescence spectrometer Raman spectrophotometer Optical and spectrophotometric analyzer For low-light-level detection requiring Selection and order guide Number of total pixels S7019-1009 Non-cooled 1048 x 516 A window material can be selected upon need, and the following is available. Temporary window (standard) : expressed by N # FOP: expressed by F # # This should be added at the end of a type No. when ordered. ex. S7019-1009N (R) temporary window Type No. General ratings Parameter CCD structure Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Cooling Number of active pixels 1024 x 512 Active area [mm (H) x mm (V)] 24.576 x 12.288 Specification Frame transfer 1024 (H) x 512 (V) 24 (H) x 24 (V) m 24.576 (H) x 12.288 (V) mm 2 phase and 2 line 2 phase and 2 line Bi-directional readout Two-stage MOSFET source follower with load resistance for high speed readout One-stage MOSFET source follower for low noise readout 48 pin metal package Temporary window FOP is available upon request 1 CCD area image sensor Absolute maximum ratings (Ta=25 C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage IGV voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Operating conditions (MPP mode, Ta=25 C) Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Parameter High speed readout Low noise readout Test point (vertical input source) Test point (vertical input gate) High Vertical shift register clock voltage Low High Horizontal shift register clock voltage Low Summing gate voltage Reset gate voltage Transfer gate voltage 2 High Low High Low High Low S7019-1009 Symbol Topr Tstg VODA, VODB VRDA, VRDB VISV VIG1V, VIG2V VSGA, VSGB VOGA, VOGB VRGA, VRGB VTGA, VTGB VP1AV, VP2AV VP1BV, VP2BV VP1CV, VP2CV VP1DV, VP2DV VP1AH, VP2AH VP3AH, VP4AH VP1BH, VP2BH VP3BH, VP4BH Min. -50 -50 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 Typ. - Max. +30 +70 +25 +18 +18 +15 +15 +15 +15 +15 Unit C C V V V V V V V V -10 - +15 V -10 - +15 V Symbol Max. 18 22 12.5 5 - VISV - - V VIG1V, VIG2V VP1AVH, VP2AVH VP1BVH, VP2BVH VP1CVH, VP2CVH VP1DVH, VP2DVH VP1AVL, VP2AVL VP1BVL, VP2BVL VP1CVL, VP2CVL VP1DVL, VP2DVL VP1AHH, VP2AHH VP3AHH, VP4AHH VP1BHH, VP2BHH VP3BHH, VP4BHH VP1AHL, VP2AHL VP3AHL, VP4AHL VP1BHL, VP2BHL VP3BHL, VP4BHL VSGAH, VSGBH VSGAL, VSGBL VRGAH, VRGBH VRGAL, VRGBL VTGAH, VTGBH VTGAL, VTGBL -8 Typ. 15 20 12 3 0 VRDA VRDB 0 Unit VRDA, VRDB VOGA, VOGB VSS Min. 12 18 11.5 1 - - V 4 6 8 VODA, VODB V V V V V -9 -8 -7 4 6 8 V -9 -8 -7 4 -9 4 -9 4 -9 6 -8 6 -8 6 -8 8 -7 8 -7 8 -7 V V V CCD area image sensor Electrical characteristics (Ta=25 C) Parameter High speed readout Low noise readout High speed readout Reset clock frequency Low noise readout Frame shift frequency Symbol Remark fc - frg - ffs CP1AV, CP2AV CP1BV, CP2BV CP1CV, CP2CV CP1DV, CP2DV CP1AH, CP2AH CP3AH, CP4AH CP1BH, CP2BH CP3BH, CP4BH CSGA, CSGB CRGA, CRGB CTGA, CTGB CTE Signal output frequency Vertical shift register capacitance Horizontal shift register capacitance S7019-1009 - Min. - Typ. 80 80 100 Max. 10,000 2,000 10,000 2,000 250 - - 22,000 - - - 25,000 - - - 110 - pF 11 18 - pF pF pF - Summing gate capacitance 5 Reset gate capacitance 5 Transfer gate capacitance 150 *1 Transfer efficiency 0.99995 0.99999 High speed readout 5 8 2 * DC output level Vout Low noise readout 12 15 High speed readout 500 *2 Output impedance Zo Low noise readout 3k High speed readout 60 2, 3 * * Power dissipation P Low noise readout 15 *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: For high speed readout, VOD=15 V. For low noise readout, VOD=20 V, Load resistance=22 kW. *3: Power dissipation of the on-chip amplifier. Electrical and optical characteristics (Ta=25 C, unless otherwide noted) Parameter Saturation output voltage Vertical Full well capacity Horizontal CCD conversion High speed readout efficiency Low noise readout 25 C Dark current (MPP mode) 0 C High speed readout Readout noise Low noise readout Dynamic range (area scanning) Spectral response range Photo response non-uniformity Blemish (grade : 0 *12) Point defects Symbol Vsat Remark - *8 Min. 150 200 0.8 0.9 12,500 - Typ. Fw x Sv 300 450 1.2 1.3 1,000 50 60 6 50,000 400 to 1,100 - Max. 3,000 150 120 12 10 Fw - Sv *4 DS *5 Nr *6 DR l PRNU *7 *9 - - 10 Unit kHz kHz kHz pF V W mW Unit V ke - V/ee-/pixel/s e-rms nm % *10 0 *11 Column defects 0 *4: For high speed readout, VOD=15 V. For low noise readout, VOD=20 V, Load resistance=22 kW. *5: Dark current nearly doubles for every 5 to7 C increase in temperature. *6: For high speed readout, -40 C, operating frequency is 1 MHz. For low noise readout, -40 C, operating frequency is 80 kHz. *7: DR=Fw / Nr, In case of low noise readout. *8: Measured at half of the full well capacity. PRNU (%)=noise / signal x 100, noise : fixed pattern noise (peak to peak) *9: White spots >3 % of full well at 0 C after Ts=1 s. Black spots >50 % reduction in response relative to adjacent pixels. *10: continuous 2 to 9 point defects. *11: continuous >10 point defects. *12: Please make contact with sales office about other grades. Cluster defects 3 CCD area image sensor Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 4 Symbol NC NC NC P1CV P2CV P1AV P2AV TGA RDA ODA OSA RGA OGA SGA P4AH P3AH P2AH P1AH NC P4BH P3BH P2BH P1BH SGB OGB RGB OSB ODB RDB TGB P2BV P1BV P2DV P1DV NC NC NC NC NC NC NC NC SS NC NC ISV IG2V IG1V Description CCD vertical register clock C-1 CCD vertical register clock C-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate A Reset drain A Output transistor drain A (high speed readout) Output transistor source A (high speed readout) Reset gate A Output gate A Summing gate A CCD horizontal register clock A-4 CCD horizontal register clock A-3 CCD horizontal register clock A-2 CCD horizontal register clock A-1 CCD horizontal register clock B-4 CCD horizontal register clock B-3 CCD horizontal register clock B-2 CCD horizontal register clock B-1 Summing gate B Output gate B Reset gate B Output transistor source B (low noise readout) Output transistor drain B (low noise readout) Reset drain B Transfer gate B CCD vertical register clock B-2 CCD vertical register clock B-1 CCD vertical register clock D-2 CCD vertical register clock D-1 Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) S7019-1009 Remark Same timing as P1AV Same timing as P2AV Same timing as P2AV Same timing as P4AH Same timing as P3AH Same timing as P2AH Same timing as P1AH Shorted to OGA Shorted to RGA Shorted to RDA Shorted to TGA Shorted to P2AV Shorted to P1AV Shorted to P2CV Shorted to P1CV Shorted to RDA Shorted to 0 V Shorted to 0 V CCD area image sensor Spectral response without window Spectral transmittance characteristic of window material (Typ. Ta=25 C) 50 S7019-1009 (Typ. Ta=25 C) 100 80 40 TRANSMITTANCE (%) QUANTUM EFFICIENCY (%) 90 30 20 70 FOP 60 50 40 30 20 10 10 0 400 500 600 700 800 900 0 400 1000 1100 1200 WAVELENGTH (nm) 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) KMPDB0051EA KMPDB0109EA Dimensional outline (unit: mm) OPEN AREA 28.0 PIN No. 1 * 1.02 ACTIVE AREA 24.576 TEMPORARY WINDOW 0.56 2.54 36.07 30.48 1 2 3 33.53 ACTIVE AREA 12.288 OPEN AREA 28.0 48 47 R1.52 33.53 R2.79 CAP 5.21 7.49 36.07 0.46 * PIN No. 1: BROWN GLASS SEAL PIN No. 2 to 48: GREEN GLASS SEAL 2.54 30.48 KMPDA0101EA 5 CCD area image sensor S7019-1009 Device structure, line output format IG1V IG2V ISV 48 47 46 SS 43 P1CV 4 34 P1DV .. 512 P2CV 5 33 P2DV 1 512 .. P1AV 6 1 P2AV 7 32 P1BV ...... 1023 1024 31 P2BV 30 TGB 26 RGB TGA 8 RGA 12 RDA 9 ...... 29 RDB ODA 10 HIGH SPEED READOUT LOW NOISE READOUT 28 ODB OSA 11 OGA 13 HIGH SPEED AMP 14 SGA 15 16 17 18 P4AH P3AH P2AH P1AH LOW NOISE AMP 20 21 22 23 P4BH P3BH P2BH P1BH 27 OSB 25 OGB 24 SGB S1023 S1024 D13 D14 D15 D16 D17 D18 D19 D20 D21 D22 D23 D24 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 S1 S2 1024 4 OPTICAL 4 OPTICAL 4 BLANK BLACK 4 ISOLATION SIGNAL OUT 4 ISOLATION BLACK 4 BLANK KMPDC0094EA Register configuration REGISTER-b REGISTER-a REGISTER-A REGISTER-B HIGH SPEED AMP LOW NOISE AMP KMPDC0091EA Transfer selection PHASE1 PHASE2 PHASE2 PHASE1 *INDICATES A AND B OGA SGA P2*H P1*H P4*H P3*H SGB OGB *INDICATES A AND B OGA SGA P2*H P1*H P4*H P3*H CHARGE TRANSFER DIRECTION CHARGE TRANSFER DIRECTION HIGH SPEED READOUT LOW NOISE READOUT SGB OGB KMPDC0092EA 6 CCD area image sensor S7019-1009 Pixel format Blank 4 Left Horizontal direction (R) Right Isolation Effective Isolation 4 1024 4 Optical black 4 Top Vertical direction (R) Bottom Effective Memory 512 512 Isolation 4 Optical black 4 Blank 4 Isolation 4 Timing chart Area scanning 1 (low dark current mode) FRAME TRANSFER PERIOD INTEGRATION PEIROD Tpwv P1CV, P1DV P2CV, P2DV P1AV, P1BV 1 2..515 INTEGRATION AND READOUT PERIOD 516512+4(ISOLATION) 1 2 3 4..515 516512+4 (ISOLATION) P2AV, P2BV TGA, TGB PHASE1* PHASE2* SGA,SGB RGA, RGB OSA, OSB ENLARGED VIEW Tovr Tpwh, Tpws P2AV, P2BV TGA, TGB PHASE1 PHASE2 SGA,SGB Tpwr RGA, RGB OSA, OSB D1 D2 D3 * REFER TO "Transfer section" Parameter Symbol Remark Pulse width Tpwv P1AV, P1BV, P1CV, P1DV *13 P2AV, P2BV, P2CV, P2DV, TGA, TGB Rise and fall time Tprv, Tpfv Pulse width Tpwh *13 PHASE1, PHASE2 Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SGA, SGB Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RGA, RGB Rise and fall time Tprr, Tpfr TGA, TGB - PHASE1 Overlap time Tovr Notes) In case of low noise readout *13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. D4 D22 D23 D5..D12, S1..S1024, D13..D21 D24 KMPDC0095EA Min. 5 200 250 10 250 10 100 5 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s 7 CCD area image sensor S7019-1009 Area scanning 2 (large full well mode) FRAME TRANSFER PERIOD INTEGRATION PEIROD Tpwv P1CV, P1DV P2CV, P2DV P1AV, P1BV 1 2..515 INTEGRATION AND READOUT PERIOD 516512+4(ISOLATION) 1 2 3 4..515 516512+4 (ISOLATION) P2AV, P2BV TGA, TGB PHASE1 PHASE2 SGA,SGB RGA, RGB OSA, OSB ENLARGED VIEW Tovr Tpwh, Tpws P2AV, P2BV TGA, TGB PHASE1 PHASE2 SGA,SGB Tpwr RGA, RGB OSA, OSB D1 D2 D3 D4 D22 D23 D5..D12, S1..S1024, D13..D21 D24 KMPDC0102EA Parameter Symbol Remark Pulse width Tpwv P1AV, P1BV, P1CV, P1DV *" P2AV, P2BV, P2CV, P2DV, TGA, TGB Rise and fall time Tprv, Tpfv Pulse width Tpwh *" PHASE1, PHASE2 Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SGA, SGB Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RGA, RGB Rise and fall time Tprr, Tpfr TGA, TGB - PHASE1 Overlap time Tovr Notes) In case of low noise readout *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Min. 5 200 250 10 250 10 100 5 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s Precaution for use (electrostatic countermeasures) Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When coupled to an FOP, element cooling/heating temperature incline rate should be set at less than 5 K/min. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 8 Cat. No. KMPD1033E03 Feb. 2003 DN