HER1001G - HER1008G CREAT BY ART 10.0AMPS. Glass Passivated High Efficient Rectifiers TO-220AB Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: TO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260/10s/.16", (4.06mm) from case Weight: 2.24 grams Ordering Information(example) Part No. HER1001G Package Packing Packing code Packing code (Green) C0 C0G TO-220AB 50 / TUBE Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Parameter Symbol HER HER HER HER HER HER HER HER 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G 50 100 200 300 400 600 800 1000 Units Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 10 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 125 A Maximum Instantaneous Forward Voltage (Note 1) @5A Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25 @ TA=125 VF 1.0 1.3 1.7 uA 400 uA Trr 50 80 Typical Junction Capacitance (Note 3) Cj 60 40 Operating Temperature Range Storage Temperature Range V 10 IR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance V nS pF O RJC 1.5 TJ - 55 to + 150 O C - 55 to + 150 O C TSTG C/W Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:G13 RATINGS AND CHARACTERISTIC CURVES (HER1001G THRU HER1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 12 FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 8 6 4 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 2 0 0 150 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 8.3mS Single Half Sine Wave JEDEC Method 125 TA=75 10 TA=25 1 0.1 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 75 100 50 HER1005G TA=25 25 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 240 TA=25 f=1.0MHz Vsig=50mVp-p 200 CAPACITANCE (pF) TA=125 100 0 160 HER1001G-HER1005G 120 80 HER1006G-HER1008G 40 INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 50 100 LEAD TEMPERATURE (oC) INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 10 HER1001G-HER1004G 10 1 HER106G-HER108G TA=25 PULSE SE WIDTH-300us 1% DUTY CYCLE 0.1 0.4 0 1 10 100 REVERSE VOLTAGE (V) 1000 0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) Version:G13 1.8 Ordering information Part No. Package BULK Packing HER100xG TO-220AB Note: "x" is Device Code from "1" thru "8". 50 / TUBE Packing code Packing code (Green) C0 C0G Dimensions DIM. Unit(mm) Unit(inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H I 2.41 4.42 2.67 4.76 0.095 0.174 0.105 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 Marking Diagram P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Version:G13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Taiwan Semiconductor: HER1001G HER1002G HER1003G HER1004G HER1005G HER1006G HER1007G HER1008G