ES1A - ES1D ES1A - ES1D Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter 1A 50 1B 100 1C 150 1.0 1D 200 Units VRRM IF(AV) Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA=120C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 30 A -50 to +150 C Operating Junction Temperature -50 to +150 C Tstg TJ V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 1.47 W RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 35 C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter 1A VF Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR IR CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 2010 Fairchild Semiconductor Corporation TA = 25C TA = 100C 1B 1C Units 1D 0.92 V 15 ns 5.0 100 A A pF 7.0 ES1A-ES1D, Rev. C1 ES1A - ES1D 10 1.5 1.25 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 1 0.75 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.5 0.25 0 0 25 50 75 100 125 Ambient Temperature [C] 150 0.01 TA = 25 C Pulse Width = 300 s 2% Duty Cycle 0.6 0.8 1 1.2 Forward Voltage, VF [V] 1.4 Figure 2. Forward Voltage Characteristics 1000 30 25 Reverse Current, IR [uA] Peak Forward Surge Current, IFSM [A] 0.1 0.001 0.4 175 Figure 1. Forward Current Derating Curve 1 20 15 10 5 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 100 T A = 125 C 10 TA = 75 C 1 T A = 25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, C T [pF] 14 12 10 8 6 4 2 0 0.1 1 10 Reverse Voltage, V R [V] 100 Figure 5. Total Capacitance 50 NONINDUCTIVE 50 NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50 NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2010 Fairchild Semiconductor Corporation ES1A-ES1D, Rev. C1 ES1A - ES1D Package Dimensions SMA / DO - 214AC Dimensions in Millimeters ES1A-ES1D, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. 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