TYN 682 ---> TYN 692
March 1995
SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conduction angle) Tc = 105 °C20 A
I
T(AV) Average on-state current
(180°conduction angle, single phase circuit) Tc = 105 °C13 A
I
TSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp = 8.3 ms 260 A
tp = 10 ms 250
I2tI
2
t value tp = 10 ms 310 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs100 A/µs
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 125 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
KAG
.HIGH SURGE CAPABILITY
.HIGH ON-STATE CURRENT
.HIGH STABILITYAND RELIABILITY
DESCRIPTION
Symbol Parameter TYN Unit
682 683 685 688 690 692
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125 °C50 100 200 400 600 800 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN 682 ---> TYN 692 Family Silicon Control-
led Rectifiers are high performance glass passi-
vated chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
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GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.3 °C/W
Symbol Test Conditions Value Unit
IGT VD=12V (DC) RL=33Tj=25°C MAX 25 mA
VGT VD=12V (DC) RL=33Tj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kTj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 200mA
dIG/dt = 1.5A/µsTj=25°C TYP 2 µs
ILIG= 1.2 IGT Tj=25°C TYP 70 mA
IHIT= 100mA gate open Tj=25°C MAX 40 mA
VTM ITM= 50A tp= 380µs Tj=25°C MAX 1.4 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj= 125°C2
dV/dt Linear slope up to VD=67%VDRM
gate open Tj= 125°C MIN 500 V/µs
tq VD=67%VDRM ITM= 50A VR= 25V
dITM/dt=30 A/µsdV
D
/dt= 50V/µsTj= 125°C TYP 70 µs
PG (AV) =1W P
GM = 10W (tp = 20 µs) IFGM =4A(tp=20µs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYN 682 ---> TYN 692
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Fig.1 : Maximum average power dissipation versus
average on-state current. Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.5 : Relative variation of gate trigger current versus
junction temperature. Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Fig.3 : Average on-state current versus case
temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
TYN 682 ---> TYN 692
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PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t 10 ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.40 4.60 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
A
GJH
D
B
C
M
L
F
O
P
=N=
I
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
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TYN 682 ---> TYN 692
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