2SK1740
Rev.0 I Page 1 of 5 I www.onsemi.com
Ordering number : EN4112A
2SK1740 N-Channel Junction Silicon FET
HF Amplifiers Low-Frequency Amplifiers
Analog Switches
Features
•Adoption of FBET process.
•Large yfs.
•Small Ciss
•Small-sized package permitting 2SK1740-applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSX 40 V
Gate-to-Drain Voltage VGDS --40 V
Gate Current IG10 mA
Drain Current ID75 mA
Allowable Power Dissipation PD250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10µA, VDS=0V --40 V
Gate-to-Source Leakage Current IGSS VGS=--20V, VDS=0V --1.0 nA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA--2.0 --3.0 --5.0 V
Drain Current IDSS VDS=10V, VGS=0V 40* 75* mA
Forward T ransfer Admittance yfs1V
DS=10V, ID=10mA, f=1kHz 10 15 mS
yfs2V
DS=10V, VGS=0V, f=1kHz 22 30 mS
Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 2.5 pF
Noise Figure NF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB
Static Drain-to-Source On-State Resistance
RDS(on) ID=10mA, VGS=0V 30 Ω
Marking : IJ
* : Pulse Test Pulse Width≤2ms.
* : The 2SK1740 is classified by IDSS as follows : (unit : mA).
Rank 3 4 5
IDSS 40 to 52 48 to 63 57 to 75
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SK1740/D
2SK1740
Rev.0 I Page 2 of 5 I www.onsemi.com
Package Dimensions
unit : mm (typ)
7013A-011
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- mV
Drain Current, ID -- mA
0
10
8
2
6
4
00 100 200 300 400 500
100
80
60
40
20
--6 --4--5 --3 --2--10
80
40
20
60
0048 2012 16
80
60
40
20
0012345
ITR01960 ITR01961
ITR01962 ITR01963
VGS=0V
--0.5V
--1.0V
--2.0V
--2.5V
--3.0V
VGS=0V
--0.5V
--1.0V
--2.0V
--2.5V
--3.0V
--1.5V
--1.5V
VGS=0V
--0.5V
--1.0V
--1.5V
--2.0V
--2.5V
VDS=10V
IDSS=75mA
55mA
40mA
1 : Source
2 : Drain
3 : Gate
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
2SK1740
Rev.0 I Page 3 of 5 I www.onsemi.com
Cutoff Voltage, VGS(off)
-- V
VGS(off) -- IDSS
Drain Current, IDSS -- mA
Drain Current, ID -- mA
Forward T ransfer Admittance,
y
fs -- mS
y
fs -- IDDrain Current, IDSS -- mA
Forward T ransfer Admittance,
y
fs -- mS
y
fs -- IDSS
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
Static Drain-to-Source
on State Resistance, RDS(on)
-- Ω
RDS(on) -- IDSS
Drain Current, IDSS -- mA yfg -- ID
Drain Current, ID -- mA
0
y
ig -- ID
big, gig -- mS
28
24
20
8
4
16
12
00481216
24
20
16
12
8
4
0481216
y
fg -- VDG
Drain-to-Gate Voltage, VDG -- V
bfg, gfg -- mS
24
20
12
8
4
16
0048 1612
bfg, gfg -- mS
100
7
5
3
2
10
5
7
3
223 57
10 23 57
100 2
ITR01968 ITR01969
ITR01970 ITR01971
IDSS=40mA
55mA 75mA
--gfg
bfg
VDG=10V
f=100MHz
Common Gate
ID=10mA
f=100MHz
Common Gate
VDG=10V
f=100MHz
Common Gate
--gfg
bfg
gig
big
VDS=10V
f=1kHz
6
5
4
3
2
--1.0 100
7543
100
80
60
40
20
0
--6 --5 --4 --3 --2 --1 0
ITR01964 ITR01965
5
3
10
7
2
5354100
7
6
5
4
3
2
10 345 7 100
ITR01966 ITR01967
VDS=10V
f=1kHz
VDS=10V
IDSS=60mA
Ta= --25°C
75°C
25°C
VDS=10V
IDSS=100µA
ID=10mA
VGS=0V
y
fs2(VGS=0V)
y
fs1(ID=10mA)
Drain Current, ID -- mA
2SK1740
Rev.0 I Page 4 of 5 I www.onsemi.com
0
y
og -- f
bog, gog -- mS
40
30
20
10
00200 400 600 800 1000
20
16
12
8
4
0400200 600 800 1000
y
ig -- f
Frequency, f -- MHz
big, gig -- mS
24
20
12
8
4
16
00200 400 1000600 800
y
fg -- f
bfg, gfg -- mS
2.8
2.4
2.0
1.6
1.2
0.8
0.4
00481216
y
rg -- VDG
brg, grg -- mS
ITR01976 ITR01977
ITR01978 ITR01979
ID=10mA
f=100MHz
Common Gate
--brg
--grg
VDG=10V
ID=10mA
Common Gate
--gfg
bfg
VDG=10V
ID=10mA
Common Gate
gig
gig
VDG=10V
ID=10mA
Common Gate
bog
gog
2.8
2.4
2.0
1.6
1.2
0.8
0.4
01612840
y
og -- ID
bog, gog -- mS
28
24
20
16
12
8
4
0
y
ig -- VDG
Drain-to-Gate Voltage, VDG -- V
big, gig -- mS
04812
16
ITR01972 ITR01973
1.2
1.0
0.8
0.4
0.2
0.6
00841612
y
rg -- ID
brg, grg -- mS
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
00481216
y
og -- VDG
bog, gog -- mS
ITR01974 ITR01975
ID=10mA
f=100MHz
Common Gate
gig
big
VDG=10V, f=100MHz
Common Gate
bog
gog
ID=10mA
f=100MHz
Common Gate
bog
gog
VDG=10V
f=100MHz
Common Gate
--brg
--grg
Drain-to-Gate Voltage, VDG -- V
Drain-to-Gate Voltage, VDG -- V
Frequency, f -- MHz
Frequency, f -- MHz
Drain Current, ID -- mA
Drain Current, ID -- mA
2SK1740
Rev.0 I Page 5 of 5 I www.onsemi.com
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- mW
Drain-to-Source Voltage, VDS -- V
Ciss -- VDS
Input Capacitance, Ciss -- pF
Drain-to-Source Voltage, VDS -- V
Crss -- VDS
Reverse Transfer Capacitance, Crss -- pF
7
5
3
2
7
5
3
10
25235710
23
1.0
5
4
3
2
1
0
y
rg -- f
Frequency, f -- MHz
brg, grg -- mS
0 200 400 600 800 1000
ITR01980 ITR01981
300
250
200
100
50
150
0020406080100 160120 140
2
10
7
5
3
2
7
1.0
5
1.0 23 57
10 23 5
ITR01982 ITR01983
VGS=0V
f=1MHz
VDG=10V
ID=10mA
Common Gate
VGS=0V
f=1MHz
--grg
--brg
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2SK1740/D
