IRFZ44NS
IRFZ44NL
HEXFET® Power MOSFET
lAdvanced Process Technology
lSurface Mount (IRFZ44NS)
lLow-profile through-hole (IRFZ44NL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.0175 Ω
ID = 49A
2
D P a k
TO-262
S
D
G
03/13/01
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.5
RθJA Junction-to-Ambient ––– 40 °C/W
Thermal Resistance
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 160
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current25 A
EAR Repetitive Avalanche Energy9.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
www.irf.com 1
PD - 94153
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
2www.irf.com
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A
Qrr Reverse Recovery Charge ––– 170 260 n C di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
49
160 A
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩVGS = 10V, ID = 25A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 19 ––– ––– SV
DS = 25V, ID = 25A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 63 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
trRise Time ––– 60 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω
tfFall Time ––– 45 ––– VGS = 10V, See Fig. 10
LSInternal Source Inductance ––– 7.5 ––– n H Between lead,
and center of die contact
Ciss Input Capacitance ––– 1470 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy––– 530150mJ IAS = 25A, L = 0.47mH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
I , Drain-to-S ource C urrent (A )
D
V , Dra in -to -S o u r ce Vo lta
g
e
(
V
)
DS
V G S
T OP 1 5V
10 V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
B OTT O M 4.5V
20
µ
s PULSE WIDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.1 1 10 100
I , D ra in-to -S o u rc e Cu rre nt ( A )
D
V , Dra in -to -S o u r ce Vo lta
g
e
(
V
)
DS
V GS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
A
4.5V
20
µ
s PULSE W IDTH
T = 1 75 °C
C
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate - t o-Sour c e Volt a
e (V)
D
I , D ra in -to -S ourc e C u rre nt (A )
A
V = 2 5V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tion T emp eratur e (°C)
R , D ra in-to -So urc e On Re s is tan c e
DS(on)
(Normalized)
V = 10 V
GS
A
I = 4 1 A
D
TJ = 25°CTJ = 175°C
Fig 2. Typical Output Characteristics
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
2000
2500
1 10 100
C , Ca pa citanc e (pF)
DS
V , Dra in -to -S o u rc e Vo lta
g
e
(
V
)
A
V = 0 V , f = 1MH z
C = C + C , C S H O RT E D
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 10203040506070
Q , T o ta l G a te C h a r
g
e
(
nC
)
G
V , Ga te -to-So u rc e Vo ltag e (V )
GS
A
FOR TEST CIRCUIT
S EE FIGURE 13
V = 4 4 V
V = 2 8 V
DS
DS
I = 2 5A
D
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0
T = 25 °C
J
V = 0 V
GS
V , S o u r ce - to -D r ain V o lta
g
e
(
V
)
I , Re ve rs e D ra in Cu rre n t (A )
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Dra in -to -S o u r ce Vo lta
g
e
(
V
)
DS
I , D ra in Cu rren t ( A )
O P ER A TION IN T H IS A R E A L IMITED
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25 °C
T = 17 5 °C
Sin
g
le Pul se
C
J
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Dut
y
factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
6www.irf.com
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01Ω
R
G
+
-
tp
VDS
IAS
VDD
V(BR)DSS
10 V
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
QG
QGS QGD
VG
Charge
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Sin g le Pu ls e Av a lan c h e E ne rg y (mJ )
AS
I
T O P 1 0A
18 A
B OTTO M 25A
A
Startin
g
T , Junction Tem perature
(
°C
)
V = 2 5 V
D
DD
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
8www.irf.com
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.2 55)
6.18 (.2 43)
2.61 (.1 03)
2.32 (.0 91)
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.1 85)
4.20 (.1 65)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .49 (.610)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.0 55)
1.14 (.0 45)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLE RANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEA D DIM ENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10) M B A M MINIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.3 50)
17 .78 (.700)
3.81 (.150)
2. 08 (.082)
2 X
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOUR CE
2.54 (.100)
2X
PART NUMBER
INTERNATIONAL
RE CTIFIE R
LOG O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT COD E
F530S
9B 1M
9246
A
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
www.irf.com 9
Package Outline
TO-262 Outline
TO-262
Part Marking Information
http://store.iiic.cc/
IRFZ44NS/IRFZ44NL
10 www.irf.com
Tape & Reel Information
D2Pak
3
4
4
TRR
FEED DIRECTION
1.85
(
.073
)
1.65
(
.065
)
1.60
(
.063
)
1.50
(
.059
)
4.10
(
.161
)
3.90
(
.153
)
TRL
FE ED D IRE CTION
10.90
(
.429
)
10.70
(
.421
)
16.10
(
.634
)
15.90
(
.626
)
1.75
(
.069
)
1.25
(
.049
)
11.60
(
.457
)
11.40
(
.449
)
15.42
(
.609
)
15.22
(
.601
)
4.72
(
.136
)
4.52
(
.178
)
24.30
(
.957
)
23.90
(
.941
)
0.368
(
.0145
)
0.342
(
.0135
)
1.60
(
.063
)
1.50
(
.059
)
13.50
(
.532
)
12.80
(
.504
)
330.00
(
14.173
)
MAX.
27.40
(
1.079
)
23.90
(
.941
)
60.00
(
2.362
)
M IN.
30.40
(
1.197
)
M A X .
26.40
(
1.039
)
24.40
(
.961
)
NOT ES :
1. CO M F O RMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIM ENSIO N MEASUR ED @ HUB.
4. INCLUDES FLANGE DISTOR TION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
http://store.iiic.cc/
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
http://store.iiic.cc/