2 [SAMSUNG SEMICONDUCTOR INC: a4e 0 [J eseun42 oooeaas.4 KSA1298--- | PNP EPITAXIAL SILICON TRANSISTOR | (og TH29-18 LOW FREQUENCY AMPLIFIER * Complement to KSC3265 SOT-23 ABSOLUTE MAXIMUM RATINGS (T.=25C) Characteristic Symbol Rating . Unit Collector-Base Voltage Veao -30 Vv Cotlector-Emitter Voltage Vceo 25 Vv Emitter-Base Voltage Veso - Vv . Collector Current bo 800 mA Base Current ls 160 mA Collector Dissipation Po 200 mw Junction Temperature T 150 C Storage Temperature Tstg 5~-150 C * Refer to KSA643 for graphs. + Base 2. Emitter 3. for , ba ELECTRICAL CHARACTERISTICS (T, =25C) Characterlstic Symbol Test Condition Min Typ Max Unit Collector-Emitter Breakdown Voltage | BVceo ={0mA, ee) 25 ov Emitter-Base Breakdown Voltage BV eso lE=1mMA, Ib=0 - Vv Collector Cutoff Current Icaa Vea=30V, =0 -100 nA Emitter Cutoff Current lepo Vea=5V, Io=0 -100 nA DC Current Gain res Vce=1V, b=-100MA 100 320 Drea Vee=-1V, le=-800mA 40 Collectar Emitter Saturation Voltage Vee (sat) =500mA, b=20mA 0.4 Vv Base-Emitter (om) Voltaye Vat (on) Vee=1V, =-10mA -0.5 -0.8 Vv Current Gain-Bandwidth Product fr Vee=-5V, lk=-10MA 120 MHz Output Capacitance Cob Vep*10V, =O 13 pF f=1MHz hre (1) CLASSIFICATION nine * Classification oO Y J 1 0 Dre (1) : 100-200 160-320 FH Ky . Wregrade . cee SAMSUNG SEMICONDUCTOR 105