DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID Max TA = 25C RDS(ON) Max 2.4 @ VGS = 10V 510mA 4.0 @ VGS = 4V 390mA NEW PRODUCT 60V Description and Applications Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, Case: SOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 making it ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) D2 D1 SOT26 Top View G2 S2 S1 G1 D2 G2 G1 ESD PROTECTED TO 2kV D1 Gate Protection Diode S1 Gate Protection Diode Equivalent Circuit Per Element S2 Top View Internal Schematic Ordering Information (Note 4) Part Number DMN601DMK-7 Notes: Case SOT26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN601DMK Document number: DS30657 Rev. 6 - 2 1 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMN601DMK Marking Information K7K = Marking Code YM = Date Code Marking Y or Y = Year (ex: S = 2005) M = Month (ex: 9 = September) K7K YM NEW PRODUCT K7K YM Date Code Key Year 2005 Code S Month Code Jan 1 --- 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 --- B C D E F G H I J K L Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) (VGS = 10V) Steady State t<10s Continuous Drain Current (Note 6) (VGS = 4V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current ID Value 60 20 510 400 ID 580 470 mA ID 390 300 mA 440 340 850 1.2 ID IDM IS Units V V mA mA mA A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: RJA RJA RJC TJ, TSTG Value 0.7 157 121 0.98 113 88 26 -55 to +150 Units W C/W W C/W C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate DMN601DMK Document number: DS30657 Rev. 6 - 2 2 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMN601DMK NEW PRODUCT Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1 10 V A A VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1.0 1.6 2.5 V 2.4 4.0 1.4 mS V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA VDS =10V, ID = 200mA VGS = 0V, IS = 115mA 50 25 5.0 pF pF pF RDS(ON) |Yfs| VSD 100 0.5 Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF 30 5 3 133 304 84 203 3.9 3.4 15.7 9.9 Test Condition VDS = 25V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 10V, ID = 250mA nS VDS = 30V, ID = 0.2A, VGS = 10V, RG = 25, RL = 150 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN601DMK Document number: DS30657 Rev. 6 - 2 3 of 7 www.diodes.com October 2015 (c) Diodes Incorporated ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 Pulsed 1.5 1 0.5 0 -50 -25 25 50 75 100 125 0 Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT DMN601DMK 0 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601DMK Document number: DS30657 Rev. 6 - 2 4 of 7 www.diodes.com October 2015 (c) Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () 0 |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT DMN601DMK 1 DMN601DMK Document number: DS30657 Rev. 6 - 2 5 of 7 www.diodes.com 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current October 2015 (c) Diodes Incorporated DMN601DMK Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT26 NEW PRODUCT D E1 SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e -- -- 0.95 e1 -- -- 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a -- -- 8 a1 -- -- 7 All Dimensions in mm E b a1 e1 A2 A3 A1 Seating Plane e L c a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT26 C1 Y1 G Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 C Y X DMN601DMK Document number: DS30657 Rev. 6 - 2 6 of 7 www.diodes.com October 2015 (c) Diodes Incorporated DMN601DMK IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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