DMN601DMK-7 - DIODES INC - Datasheet.Live

DMN601DMK

Document number: DS30657 Rev. 6 - 2

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www.diodes.com

October 2015

DMN601DMK

NEW PROD UCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(ON) Max

ID Max

TA = 25°C

60V

2.4Ω @ VGS = 10V

510mA

4.0Ω @ VGS = 4V

390mA

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (RDS(ON)), yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

 DC-DC Converters

 Power Management Functions

 Analog Switch

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish  Matte Tin Annealed over Copper

Leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.015 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN601DMK-7

SOT26

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

SOT26

Top View

Internal Schematic

Equivalent Circuit

Per Element

ESD PROTECTED TO 2kV

D1

S1

G1

Gate Protection

Diode

D2

S2

G2

Gate Protection

Diode

S2

D2

D1

S1

G2

G1

DMN601DMK

Document number: DS30657 Rev. 6 - 2

2 of 7

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October 2015

DMN601DMK

NEW PROD UCT

Marking Information

Date Code Key

Year

2005

---

2014

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

Code

S

---

B

C

D

E

F

G

H

I

J

K

L

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) (VGS = 10V)

Steady

State

TA = +25°C

TA = +70°C

ID

510

400

mA

t<10s

TA = +25°C

TA = +70°C

ID

580

470

mA

Continuous Drain Current (Note 6) (VGS = 4V

Steady

State

TA = +25°C

TA = +70°C

ID

390

300

mA

t<10s

TA = +25°C

TA = +70°C

ID

440

340

mA

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

850

mA

Maximum Body Diode Continuous Current

IS

1.2

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

0.7

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

157

°C/W

t<10s

121

Total Power Dissipation (Note 6)

PD

0.98

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

113

°C/W

t<10s

88

Thermal Resistance, Junction to Case (Note 6)

RθJC

26

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

K7K = Marking Code

YM = Date Code Marking

Y or Y = Year (ex: S = 2005)

M = Month (ex: 9 = September)

K7K YM

DMN601DMK

Document number: DS30657 Rev. 6 - 2

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October 2015

DMN601DMK

NEW PROD UCT

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS



1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS



10

µA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.5

V

VDS = 10V, ID = 1mA

Static Drain-Source On-Resistance

RDS(ON)



2.4

4.0

Ω

VGS = 10V, ID = 200mA

VGS = 4V, ID = 200mA

Forward Transfer Admittance

|Yfs|

100



mS

VDS =10V, ID = 200mA

Diode Forward Voltage

VSD

0.5



1.4

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



30

50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



5

25

pF

Reverse Transfer Capacitance

Crss



3

5.0

pF

Gate Resistance

Rg



133



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg



304



nC

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs



84



Gate-Drain Charge

Qgd



203



Turn-On Delay Time

tD(ON)



3.9



nS

VDS = 30V, ID = 0.2A,

VGS = 10V, RG = 25Ω, RL = 150Ω

Turn-On Rise Time

tR



3.4



Turn-Off Delay Time

tD(OFF)



15.7



Turn-Off Fall Time

tF



9.9



Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN601DMK

Document number: DS30657 Rev. 6 - 2

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DMN601DMK

NEW PROD UCT

0

0.2

0.4

0.6

0.8

1.0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

I , DRAIN CURRENT (A)

D

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

GS

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0

0.5

1

1.5

2

-50 -25 025 50 75 100 125 150

V = 10V

I = 1mA

Pulsed

DS

D

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

0.1

I DRAIN CURRENT(A)

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

D,

1

10

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



1

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

D

10

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

V GATE-SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

GS,

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



DMN601DMK

Document number: DS30657 Rev. 6 - 2

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October 2015

DMN601DMK

NEW PROD UCT

0

T , CHANNEL TEMPERATURE ( C)

Fig. 7

CH °

Static Drain-Source On-State Resistance

vs. Channel Temperature

R , STATIC DRAIN-SOURCE

ON-STATE RESISTANCE ( )

DS(ON)



I , REVERSE DRAIN CURRENT (A)

DR

1

I , REVERSE DRAIN CURRENT (A)

DR

1

I , DRAIN CURRENT (A)

D

Fig.10 Forward Transfer Admittance vs. Drain Current

|Y |, FORWARD TRANSFER ADMITTANCE (S)

fs

DMN601DMK

Document number: DS30657 Rev. 6 - 2

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October 2015

DMN601DMK

NEW PROD UCT

Package Outline Dimensions



Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT26

Dim

Min

Max

Typ

A1

0.013

0.10

0.05

A2

1.00

1.30

1.10

A3

0.70

0.80

0.75

b

0.35

0.50

0.38

c

0.10

0.20

0.15

D

2.90

3.10

3.00

e

—

0.95

e1

—

1.90

E

2.70

3.00

2.80

E1

1.50

1.70

1.60

L

0.35

0.55

0.40

a

—

8°

a1

—

7°

All Dimensions in mm

Dimensions

Value (in mm)

C

2.40

C1

0.95

G

1.60

X

0.55

Y

0.80

Y1

3.20

a1

D

e

E1 E

b

A2 A1

Seating Plane

L

c

a

e1

A3

C1

Y1 G

X

Y

C

SOT26

DMN601DMK

Document number: DS30657 Rev. 6 - 2

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October 2015

DMN601DMK

NEW PROD UCT

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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final and determinative format released by Diodes Incorporated.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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