Bulletin I2404 rev. B 05/06 16RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features 16A Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM/ V RRM RoHS Compliant Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) 16 A 85 85 C 35 35 A @ 50Hz 340 225 A @ 60Hz 360 235 A @ 50Hz 574 255 A 2s @ 60Hz 524 235 A 2s 100 to 1200 1400 to 1600 V IT(RMS) I 2t VDRM/VRRM tq Units 16 @ TC ITSM 16RIA 10 to 120 140 to 160 typical TJ www.irf.com 110 s - 65 to 125 C Case Style TO-208AA (TO-48) 1 16RIA Series Bulletin I2404 rev. B 05/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM/V RRM , max. repetitive peak and off-state voltage (1) V VRSM , maximum nonrepetitive peak voltage (2) V I DRM /I RRM max. 10 100 150 20 20 200 300 16RIA 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 @ TJ = TJ max. mA 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms On-state Conduction Parameter 16RIA 10 to 120 140 to 160 Units Max. average on-state current 16 16 A @ Case temperature 85 85 C IT(RMS) Max. RMS on-state current 35 35 A ITSM Max. peak, one-cycle 340 225 A non-repetitive surge current 360 IT(AV) 2 It 2 I t Maximum I t for fusing 2 2 Maximum I t for fusing VT(TO)1 Low level value of threshold Conditions 180 sinusoidal conduction t = 10ms No voltage 235 t = 8.3ms reapplied 285 190 t = 10ms 100% VRRM 300 200 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 2 574 255 A s 524 235 t = 8.3ms reapplied 405 180 t = 10ms 100% VRRM 375 165 t = 8.3ms reapplied 2 t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 5740 2550 A s 0.97 1.14 V 1.24 1.31 17.9 14.83 13.6 12.03 1.75 --- --- 1.80 voltage VT(TO)2 High level value of threshold (I > x IT(AV)), TJ = TJ max. voltage rt1 Low level value of on-state m (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state (I > x IT(AV)), TJ = TJ max. slope resistance VTM Max. on-state voltage IH Maximum holding current 130 IL Latching current 200 2 V mA Ipk= 50 A, TJ = 25C TJ = 25C. Anode supply 6V, resistive load, www.irf.com 16RIA Series Bulletin I2404 rev. B 05/06 Switching Parameter di/dt Units Max. rate of rise of turned-on current tgt 16RIA TJ = TJ max., VDM = rated VDRM VDRM 600V 200 VDRM 800V 180 VDRM 1000V 160 VDRM 1600V 150 Typical turn-on time Conditions A/s Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A 0.9 TJ = 25C, at = rated VDRM/VRRM, TJ = 125C trr Typical reverse recovery time 4 s TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s tq Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 16RIA 100 300 (*) Units Conditions V/s TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 16RIA160S90. Triggering Parameter PGM Maximum peak gate power 16RIA Units Conditions 8.0 W TJ = TJ max. PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 1.5 A TJ = TJ max. -VGM Maximum peak negative 10 V TJ = TJ max. gate voltage IGT VGT DC gate current required 90 to trigger 60 TJ = - 65C mA TJ = 25C 35 TJ = 125C DC gate voltage required 3.0 TJ = - 65C to trigger 2.0 V TJ = 25C 1.0 V TJ = 125C IGD DC gate current not to trigger 2.0 mA VGD DC gate voltage not to trigger 0.2 V Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value www.irf.com Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 16RIA Series Bulletin I2404 rev. B 05/06 Thermal and Mechanical Specification Parameter 16RIA Units Conditions TJ Max. operating temperature range - 65 to 125 C Tstg Max. storage temperature range - 65 to 125 C 0.86 K/W DC operation 0.35 K/W Mounting surface, smooth, flat and greased R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque wt to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm Approximate weight 14 (0.49) g (oz) Case style TO-208AA (TO-48) See Outline Table RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180 0.21 0.15 120 0.25 0.25 90 0.31 0.34 60 0.45 0.47 30 0.76 0.76 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 16 RIA 160 2 1 S90 4 5 1 - Current code 2 - Essential part number 3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M 5 - = Stud base TO-208AA (TO-48) M6 X 1 Critical dv/dt: None = 300V/s (Standard value) S90 4 3 M = 1000V/s (Special selection) www.irf.com 16RIA Series Bulletin I2404 rev. B 05/06 Outline Table Case Style TO-208AA (TO-48) 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) All dimensions in millimeters (inches) 16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W 120 110 100 Conduction Angle 90 30 80 60 70 90 120 180 60 50 0 5 10 15 20 25 130 16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W 120 110 100 Conduction Period 90 30 80 60 90 120 70 180 60 50 DC 0 10 20 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 40 5 16RIA Series 45 180 120 90 60 30 40 16RIA Series (100 to 1200V) TJ = 125C 5 0 0 5 10 15 20 Average On-state Current (A) R 10 a elt -D Conduction Angle W K/ 20 15 1 0. 3K /W 4K /W 5K /W 7K /W RMS Limit 25 K/ W = 30 2 SA th 35 R Maximum Average On-state Power Loss (W) Bulletin I2404 rev. B 05/06 10 K/ W 25 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) 45 35 15 Conduction Period 10 16RIA Series (100 to 1200V) TJ = 125C 5 0 0 4 8 12 16 20 24 Average On-state Current (A) R RMS Limit a elt -D 3K /W 4K /W 5K /W 7K /W 25 20 K/ W W K/ 30 2 1 0. DC 180 120 90 60 30 40 = A hS R t Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 10 K/W 28 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 280 260 240 220 200 180 16RIA Series (100 to 1200V) 160 140 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 350 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated V RRMReapplied 325 300 275 250 225 200 175 150 16RIA Series (100 to 1200V) 125 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 16RIA Series Bulletin I2404 rev. B 05/06 1000 Instantaneous On-state Current (A) 16RIA Series (100 to 1200V) 100 10 TJ = 25C TJ = 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Maximum Allowable Case Temperature (C) 130 16RIA Series (1400 to 1600V) RthJC (DC) = 1.15 K/W 120 110 Conduction Angle 100 30 60 90 120 90 80 0 2 4 6 8 10 180 130 16RIA Series (1400 to 1600V) RthJC (DC) = 1.15 K/W 120 110 Conduction Period 100 90 80 30 70 12 14 16 18 0 5 90 60 120 10 180 DC 15 20 25 30 Average On-state Current (A) Average On-state Current (A) Fig. 8 - Current Ratings Characteristics Fig. 9 - Current Ratings Characteristics 30 /W .5 K =0 5 16RIA Series (1400 to 1600V) TJ = 125C 5 ta R Del Conduction Angle 0 A 7K /W 10 0 S R th 5K /W RMS Limit 15 K/ W /W 1K W K/ 1.5 20 3. 5 /W K W K/ 25 2 180 120 90 60 30 5 2. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 7 - Forward Voltage Drop Characteristics 10 15 Average On-state Current (A) 10 K/W 0 20 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 10 - On-state Power Loss Characteristics www.irf.com 7 16RIA Series 40 5K /W 15 Conduction Period 10 16RIA Series (1400 to 1600V) TJ = 125C 5 0 4 aR elt -D 3.5 K/W 20 RMS Limit 0 K/W .5 =0 25 2 K/ W 2. 5K /W A 30 S R th DC 180 120 90 60 30 35 /W 1K /W 5K 1. Maximum Average On-state Power Loss (W) Bulletin I2404 rev. B 05/06 8 12 16 20 24 7K /W 10 K /W 28 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Average On-state Current (A) Fig. 11 - On-state Power Loss Characteristics 250 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 180 160 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 200 140 120 100 80 16RIA Series (1400 to 1600V) 1 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRMReapplied 225 200 175 150 125 100 16RIA Series (1400 to 1600V) 75 0.01 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25C TJ = 125C 10 16RIA Series (1400 to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics 8 www.irf.com 16RIA Series Transient Thermal Impedance Z thJC (K/W) Bulletin I2404 rev. B 05/06 10 Steady State Value RthJC = 1.15 K/W (DC Operation) 1 0.1 16RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 15 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) 0.1 0.001 Tj = -65 C VGD Tj = 25 C Tj = 125 C 1 (1) IGD (2) (3) (4) 16RIA Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial and Consumer Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06 www.irf.com 9