SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 PARTMARKING DETAILS: BSV52 - B2 BSV52R B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Coliector-Base Voltage Vso 20 Vv Collector-Emitter Voltage Vees 20 Vv Collector-Emitter Voltage Veo 12 Vv Emitter-Base Voltage VeBo 5 Vv Peak Pulse Current lom 200 mA Continuous Collector Current Ne 100 mA Power Dissipation at Tamp = 25C Prot 330 mW Operating and Storage Temperature Range tj:tstg 55 to +150 C ELECTRICAL CHARACTERISTICS (at T.) = 25C unless otherwise stated) PARAMETER SYMBOL | MIN. | TYP. | MAX. | UNIT | CONDITIONS Collector-Base Cut-Off leso 100 nA =0, Veg =10V- Current 5.0 vA | Ip=0, Veg=10V, T,=126C Collector-Emitter Vece(sat) 300 mV | Ic=10mA, |Ip=0.3mA Saturation Voltage 250 mV | lo=10mA, Ig=1.0mMA 400 mV j Il=50mA, Ig=5.0mA Base-Emitter Vecisat) 700 850 mV } Ic=10mA, Ig=1.0mA Saturation Voltage 1.2 Vo] te =50mA, Ig=5.0mA Static Forward Current Hee 25 Ic=1.0MA, Vog = 1.0V Transfer Ratio 40 120 le=10mMA, Voe= 1.0V 25 lc =50mMA, Veg= 1.0V Transition Frequency fr 400 | 500 MHz eae 10mA, Veg = 10V f= 100MHz Collector Capacitance Cre 4.0 pF ; Ie=l,= etd Nee= =5.0V f=1.0M Emitter Capacitance Cre 4.5 pF | tc=l,=0, Veg=1.0V f= 1.0MHz Turn-On Time Ton 12 ns | Voc =3V, Veejort) = 1-5V lo =10mA, |3, = ama {see Fig. 1) Turn-Off Time Tort 18 ns | Voc =3V, le =10mA, Ip, =3mMA Ig2 = 1.5mA (see Fig. 2)- Storage Time ts 13 ns | Igy =lpo=le=10mMA (see Fig. 3) For Switching Time Circuit see page DS201