BAS85 SILICON SCHOTTKY BARRIER DIODE Features * * * For general applications Low turn-on voltage PN junction guard ring A B C Mechanical Data * * Glass case Weight: 0.05g (approx) Min Max A 3.4 3.6 B 1.40 1.50 C 0.20 0.40 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Symbol Value Continuous reverse voltage Characteristic VR 30 V Forward continuous current* IF 200 mA IFM 300 mA @ tp = 1s IFSM 600 mA @ TA = 65C Ptot 200 mW Tj 125 C TA -65 to +125 C TSTG -65 to +150 C Peak forward current* Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range Electrical Characteristics Unit @ Tj = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit V(BR)R 30 -- -- V Reverse breakdown voltage 10 mA pulses * Valid provided that electrodes are kept at ambient temperature. DS30189 Rev. A-5 1 of 1 BAS85