5962R0051701VDA - ANALOG DEVICES

[!l .

REVISIONS

LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

A Make change to input offset voltage tests as specified under sections;

“VS = +5 V, VCM = 2.5 V” and “VS = +3 V, VCM = 1.5 V” in table I. - ro 00-11-28 R. MONNIN

B Make change to supply current test as specified under section;

“VS = +3 V, VCM = 1.5 V” in table I. - ro 00-12-19 R. MONNIN

C Make change to VOS delta limit as specified in TABLE IIB. - ro 01-10-05 R. MONNIN

D Add radiation hardened requirements. - ro 01-11-13 R. MONNIN

E Drawing updated to reflect current requirements. -rrp 06-06-27 R. MONNIN

F Update drawing as part of 5 year review. - jt 12-01-05 C. SAFFLE

G Add device type 02. Delete device class M references. - ro 13-10-22 C. SAFFLE

H Make change to both Output high voltage test subgroup 4 limits as specified

under Table I. Make correction to condition column limit VOUT = 2.5 V to both

radiation levels for VS = +5 V supply current test as specified under

Table I. - ro 18-03-22 C. SAFFLE

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV H H H H H H H H H H H

SHEET 1 2 3 4 5 6 7 8 9 10 11

PMIC N/A PREPARED BY

Rajesh Pithadia DLA LAND AND MARITIME

COLUMBUS, OHIO 4321 8-3990

http://www.dla.mil/landandmaritime

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

CHECKED BY

Rajesh Pithadia

APPROVED BY

Rajesh Pithadia MICROCIRCUIT, LINEAR, QUAD, RAIL-TO-RAIL,

PRECISION, OPERATIONAL AMPLIFIER,

MONOLITHIC SILICON

DRAWING APPROVAL DATE

00-04-14

REVISION LEVEL

H SIZE

A CAGE CODE

67268 5962-00517

SHEET 1 OF 11

DSCC FORM 2233

APR 97 5962-E290-18

DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

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I I _l_ _l_ _l_ _l_

1. SCOPE

1.1 Scope. This dra wing doc uments two product assurance class levels c onsisting of high reliability (device class Q) and

space application (device class V). A choice of case outlines and le ad finishes are availab le and are reflected in the Part or

Identifying Number (PIN). When available, a choice of Radiation Har dness Assurance (RHA) levels is reflected in the PIN.

1.2 PIN. The PIN is as shown in the follo wing example:

5962 R 00517 01 V C A

Federal RHA Device Device Case Lead

stock class designator type class outline finish

designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5)

\ / (see 1.2.3)

\/

Drawing number

1.2.1 RHA designator. Device classes Q an d V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are

marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

1.2.2 Device type(s). The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function

01 OP484A Precision, rail-to-rail input and output,

quad operational amplifier

02 OP484A Precision, rail-to-rail input and output,

quad operational amplifier

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

follows:

Device class Device requirements docum entation

Q or V Certification and qualification to MIL-PRF-38535

1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

C GDIP1-T14 or CDIP2-T14 14 Dual-in-line

D GDFP1-F14 or CDFP2-F14 14 Flat pack

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-3853 5 for device classes Q and V.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 2

DSCC FORM 2234

APR 97

1.3 Absolute maximum ratings. 1/

Supply voltage .......................................................................................................................... ±18 V

Power dissipation ..................................................................................................................... 500 mW

Differential input voltage ........................................................................................................... ±0.6 V

Input voltage ............................................................................................................................ ±18 V

Output short-circuit duration ..................................................................................................... Indefinite

Storage temperature range ...................................................................................................... -65°C to +150°C

Lead temperature (soldering, 60 seconds) ............................................................................... +300°C

Junction temperature (TJ) ........................................................................................................ -65°C to +150°C

Thermal resistance, junction-to-case (JC) .............................................................................. See MIL-STD-1835

Thermal resistance, junction-to-ambient (JA):

Case C .................................................................................................................................. 108°C/W

Case D .................................................................................................................................. 160°C/W

1.4 Recommended operatin g conditions.

Supply voltage (VS) .................................................................................................................. -15 V to +15 V

Operating temperature range (TA) ........................................................................................... -55°C to +125°C

1.5 Radiation features:

Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):

Device type 01 ...................................................................................................................... 100 krads(Si) 2/

Maximum total dose available (dose rate  10 mrads(Si)/s):

Device type 02 ...................................................................................................................... 50 krads(Si) 3/

_____

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Device type 01 may be dose rate sensitive in space enviro nment and may demonstrate enha nced low dose rate effects.

Radiation end point limits for the noted parameters are guar anteed only for the conditions as specified in MIL-STD-883,

method 1019, condition A.

3/ For device type 02, radiation end point limits for the noted parameters are guaranteed for the conditions specified in

MIL-STD-883, method 1019, condition D.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 3

DSCC FORM 2234

APR 97

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microcir cuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Copies of these documents ar e available online at http://quicksearch.dla.mil or from the Standardization Document Order

Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations un less a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accor dance with

MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Mana gement (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described here in.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Radiation exposure circuit. The radiation exposur e circuit shall be maintained by the manufacturer under document

revision level control and shall be made avail able to the preparing and acquirin g activity upon request.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

ambient operating temperature range.

3.4 Electrical test requirement s. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN numb er is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the devic e. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

3.5.1 Certification/compli ance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 4

DSCC FORM 2234

APR 97

I I

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I I I I

I

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TABLE I. Electrical performance characteristi cs.

Conditions 1/ 2/

Test Symbol -55C  TA  +125C Group A Device Limits Unit

unless otherwise specified subgroups type

Min Max

VS = +5 V, VCM = 2.5 V section 

Input offset voltage VOS 1 01,02 200

V

2, 3 400

M,D,P,L,R 1 01 600

M,D,P,L 1 02 600

Input offset current IOS 3/ 1, 2, 3 01,02 50 nA

VS = +5 V, M,D,P,L,R 1 01 400

VS = +5 V, M,D,P,L 1 02 400

Input bias current IB 3/ 1 01,02 350 nA

2, 3 575

VS = +5 V, M,D,P,L,R 1 01 3000

VS = +5 V, M,D,P,L 1 02 3000

Common-mode 4/ CMRR VCM = 1.0 V to 4.0 V 1, 2, 3 01,02 86 dB

rejection ratio

Output high voltage VOH IL = 1 mA 4 01,02 4.80 V

5, 6 4.7

M,D,P,L,R 4 01 4.7

M,D,P,L 4 02 4.7

Output low voltage 4/ VOL IL = 1 mA 4 01,02 125 mV

5, 6 200

Large signal voltage gain AVO RL = 2 k, 4 01,02 50 V/mV

VOUT = 1 V to 4 V 5, 6 25

RL = 10 k, M,D,P,L,R 4 01 25

VOUT = 1 V to 4 V

RL = 10 k, M,D,P,L 4 02 25

VOUT = 1 V to 4 V

Supply current 5/ ISY VOUT = 2.5 V 1 01,02 5.8 mA

M,D,P,L,R 1 01 5.85

M,D,P,L 1 02 5.85

See footnotes at end of table.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 5

DSCC FORM 2234

APR 97

I I

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I I I I

I

-

- -

-

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/ 2/

Test Symbol -55C  TA  +125C Group A Device Limits Unit

unless otherwise specified subgroups type

Min Max

VS = +3 V, VCM = 1.5 V section

Input offset voltage 4/ VOS 1 01,02 200

V

2, 3 400

Input offset current 4/ IOS 3/ 1, 2, 3 01,02 50 nA

Input bias current 4/ IB 3/ 1 01,02 350 nA

2, 3 575

Common-mode 4/ CMRR VCM = 0 V to 3 V 1 01,02 60 dB

rejection ratio 2, 3 56

Output high voltage 4/ VOH IL = 1 mA 4 01,02 2.80 V

5, 6 2.65

Output low voltage 4/ VOL IL = 1 mA 4 01,02 125 mV

5, 6 200

Supply current 4/ 5/ ISY VOUT = 1.5 V 1 01,02 5.4 mA



VS = 15 V, VCM = 0 V section

Input offset voltage 4/ VOS 1 01,02 250

V

2, 3 500

Average input offset 4/ TCVOS 8 01,02 2

V/C

voltage

Input offset current 4/ IOS 1, 2, 3 01,02 50 nA

Input bias current 4/ IB 1 01,02 350 nA

2, 3 575

Common-mode 4/ CMRR VCM = -15 V to +15 V 1, 2, 3 01,02 80 dB

rejection ratio

Power supply rejection 4/ PSRR VS = 2 V to 18 V 1, 2, 3 01,02 90 dB

ratio

Output high voltage 4/ VOH IL = 1 mA 4 01,02 14.8 V

5, 6 14.7

Output low voltage 4/ VOL IL = 1 mA 4 01,02 -14.875 V

5, 6 -14.8

See footnotes at end of table.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 6

DSCC FORM 2234

APR 97

I I

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I I I I

I

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- -

-

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/ 2/

Test Symbol -55C  TA  +125C Group A Device Limits Unit

unless otherwise specified subgroups type

Min Max

VS = 15 V, VCM = 0 V section – Continued

Large-signal voltage 4/ AVO RL = 2 k, VOUT = 10 V 4 01,02 150 V/mV

gain 5, 6 75

Supply current 4/ 5/ ISY VOUT = 0 V 1 01,02 8 mA

VS = 18 V, VOUT = 0 V 1, 2, 3 9

Slew rate 4/ SR RL = 2 k 7 01,02 2.4 V/s

1/ Device type 01 supplied to this drawing have been characterized through all leve ls M, D, P, L, R of irradiation.

Device type 02 supplied to this drawing has been character ized through all levels P and L of irradiation.

However, device type 01 is only tested at the “R” level and device type 02 is only tested a t the “L” level. Pre and Post

irradiation values are identical unless other wise specified in table I. When performing post irradiation electrical

measurement for any RHA level, T A = +25C.

2/ Device type 01 may be dose rate sensitive in space enviro nment and may demonstrate enha nced low dose rate effects.

Radiation end point limits for the noted parameters are guar anteed only for the conditions as specified in MIL-STD-883,

method 1019, condition A for device type 01. For device type 02, radiation end p oint limits for the noted parameters are

guaranteed for the conditio ns specified in MIL-STD-883, method 1 01 9, condition D.

3/ Guaranteed by VS = 15 V test.

4/ This parameter is not tested to post irradiation.

5/ ISY limit equals total of all four amplifiers.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall b e required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance

submitted to DLA Land and Maritime-VA prior to listing as a n approved source of supply for this dra wing shall affirm that the

manufacturer's product meets, for device classes Q and V, the requiremen ts of MIL-PRF-38535 and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall

be provided with each lot of microcircuits deli vered to this drawing.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 7

DSCC FORM 2234

APR 97

Device types 01, 02

Case outlines C and D

Terminal Terminal symbol

number

1 OUTPUT A

2 -INPUT A

3 +INPUT A

4 +VS

5 +INPUT B

6 -INPUT B

7 OUTPUT B

8 OUTPUT C

9 -INPUT C

10 +INPUT C

11 -VS

12 +INPUT D

13 -INPUT D

14 OUTPUT D

FIGURE 1. Terminal connections.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 8

DSCC FORM 2234

APR 97

4. VERIFICATION

4.1 Sampling and insp ection. For device classes Q and V, sampling a nd inspection procedures shall be in accordanc e with

MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan

shall not affect the form, fit, or function as described herein.

4.2 Screening. For device classes Q and V, screening shall be in accorda nce with MIL-PRF-38535, and shall be conducted

on all devices prior to qualific ation and technology conformance inspection.

4.2.1 Additional criteria for device classes Q and V.

a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under

document revision level contro l of the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activit y upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified i n table IIA herein.

c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in

accordance with MIL-PRF-38535. Inspectio ns to be performed shall be those specified in MIL-PRF-38 535 and herein for groups

A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

4.4 Conformance inspection. Technology conformance in spection for classes Q and V shall be in accor dance with

MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified here in.

4.4.1 Group A inspection.

a. Tests shall be as specif ied in table IIA herein.

b. Subgroups 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.

4.4.2 Group C inspection. T he group C inspection end-point electrical parameters shall be as specified in table IIA herein.

4.4.2.1 Additional criteria for devic e classes Q and V. The steady-state life test duration, test condition and test temperature,

or approved alternativ es shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The

test circuit shall be maintained under docum ent revision level control by the device manufacturer's TRB in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the

inputs, outputs, biases, and power dissipation, as applicable, in accordance with the inte nt specified in method 1005 of

MIL-STD-883.

4.4.3 Group D inspection. T he group D inspection end-point electrical parameters shall be as specified in table IIA herein.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 9

DSCC FORM 2234

APR 97

TABLE IIA. Electrical test requirements.

Test requirements Subgr oups

(in accordance with

MIL-PRF-38535, table III)

Device Device

class Q class V

Interim electrical 1 1

parameters (see 4.2)

Final electrical 1,2,3,4,5,6, 1/ 1,2,3,4, 1/ 2/

parameters (see 4.2) 7,8 5,6,7,8

Group A test 1,2,3,4,5,6, 1,2,3,4,5,6,

requirements (see 4.4) 7,8 7,8

Group C end-point electrical 1 1 2/

parameters (see 4.4)

Group D end-point electrical 1 1

parameters (see 4.4)

Group E end-point electrical 1,4 1,4

parameters (see 4.4)

1/ PDA applies to subgroup 1. VOS excluded from PDA.

2/ Delta limits as specified in table IIB shall be required where specified,

and delta limits shall be computed with reference to the pr evious

endpoint electrical parameters.

TABLE IIB. 240 hour burn-in and group C end-point electrical parameters. TA = 25C

Parameter Device type Limit Delta 1/

VOS 01, 02 250 V 250 V

IIB 350 nA 100 nA

IOS 50 nA 40 nA

1/ Delta limits apply to 15 V operation.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 10

DSCC FORM 2234

APR 97

4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured

(see 3.5 herein).

a. End-point electrical parameters shall be as specified in table IIA herein.

b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation h ardness assured tests as

specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point

electrical parameter limits as defined i n table I at TA = +25C 5C, after exposure, to the subgroups specified in

table IIA herein.

4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method

1019, condition A for device type 01 and condition D for device type 02, and as specified herein.

5. PACKAGING

5.1 Packaging requirements. T he requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes

Q and V.

6. NOTES

6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications

(original equipment), desig n applications, and lo gistics purposes.

6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device cover ed by a contractor

prepared specification or drawing.

6.2 Configuration control of SMD's. All proposed ch anges to existing SMD's will be coordinated with the users of record for

the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

6.3 Record of users. Militar y and industrial users should inform DLA Land and Maritime when a system applic ation requires

configuration control and which SMD's are applicab le to that system. DLA Land and Maritime will maintain a record of users and

this list will be used for coordinatio n and distribution of changes to the drawings. Users of drawings covering microelectronic

devices (FSC 5962) should c ontact DLA Land and Maritime-VA, telephon e (614) 692-8108.

6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columb us, Ohio 43218-3990,

or telephone (614) 692-0540.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and defin itions used herein are defined i n

MIL-PRF-38535 and MIL-HDBK-133 1.

6.6 Sources of supply.

6.6.1 Sources of supply for device cl asses Q and V. Sources of supply for device classes Q and V are listed in

MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of

compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

SIZE

A 5962-00517

REVISION LEVEL

H SHEET 11

DSCC FORM 2234

APR 97

STANDARD MICROCIRCUIT DRAWING BULLETIN

DATE: 18-03-22

Approved sources of suppl y for SMD 5962-00517 are listed below for immedi ate acquisition information only and

shall be added to MIL-HDBK-103 an d QML-38535 during the next revision. MIL-HDBK-103 and QML-3 8535 will be

revised to include the addition or deletion of sources. The vendors listed below have agreed to this dra wing and a

certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information

bulletin is superseded by the ne xt dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime

maintains an online database of all current sources of supply at https://landandmaritimeapps.dla.mil/programs/smcr/.

Standard

microcircuit drawing

PIN 1/

Vendor

CAGE

number

Vendor

similar

PIN 2/

5962-0051701VCA 24355 OP484AY/QMLV

5962-0051701VDA 24355 OP484AM/QMLV

5962R0051701VCA 24355 OP484AY/QMLR

5962R0051701VDA 24355 OP484AM/QMLR

5962L0051702VDA 24355 OP484AM/QMLL

1/ The lead finish sho wn for each PIN representing

a hermetic package is the most readily available

from the manufacturer listed for that part. If the

desired lead finish is not listed contact the vendor

to determine its availability.

2/ Caution. Do not use this number for item

acquisition. Items acquired to this number m ay not

satisfy the performance requirements of this drawing.

Vendor CAGE

number Vendor name

and address

24355 Analog Devices

Rt 1 Industrial Park

P.O. Box 9106

Norwood, MA 02062

Point of contact: 7910 Triad Center Drive

Greensboro, NC 27409-9605

The information contained herein is disseminated for conv enience only and the

Government assumes no liability whatsoeve r for any inaccuracies in the

information bulletin.