SPECIFICATIONS General Series PIC 4OOO6, PTC 10007 NPN Silicon Power Darlington Transistors 10 Amperes 400 Volts FEATURES | @ High Voltage Rating 400 Volts Sustaining @ Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS @ High Voltage Switching Power Supplies Inverters/Regulators @ Deflection Circuits Control Circuitry Electrical The PTC 10006 and PTC 10007 Powermode series of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, regulators and inverter or converter circuits operating off 240 volt lines. 4.050 0.161 (4.09) 0.450 (11.43) (26.68) MAX. | 0.151 (3.84) DIA. 0.135 0.875 (22.28) ~ 0.250 (6.35) | 2 HOLES (3.43) MAX. ___ SEATING | - | PLANE 0.675 (17.65)t 1.573 Lu _ 0.655 we (39.96) MAX. \ 0.32 (8.13) MIN. 1.197 (30.40) 0.043 (1.09) 1.177 (29.90) II 0.038 (0.97) DIA. 0.161 fA 9.161 pig EMITTER 7 0.151 A = Basic dimensions in inches. BASE 0.225 (5.72)t 0.205 (5.21) 0.440 (11.18)+ 0.420 (10.67) TMEASURED AT SEATING PLANE Dimensions shown in PARENTHESES are in millimeters. Package outline JEDEC TO-204MA AVAILABLE IN STANDARD VALUES FROM STOCK AT ELECTRONIC DISTRIBUTORS. 278SERIES PTC 10006/10007 High Voltage Fast Switching NPN Darlingtons > : pe 7 . a Absolute maximum ratings Chemmai anc % Description PTC 10006 | PTC 10007 | Unit | Conditions Description Type | Min. | Typ. | Max. | Unit VCBO Collector-Base Voltage 450 500 Volts ReJC Thermal Resistance * Junction to Case All 117 | CW VCEO(sus) Collector-Emitter Voltage 350 400 Volts Emi Maximum Lead Temperature for VCEX(sus) Collector-Emitter Voltage 400 450 Volts Soldering Purposes: en from Case 275 C Ic Collector Current Continuous 10 A for 5 Seconds Ic Collector Current Peak 20 A tJ,tSTG Operatingand Storage Junction 3 : 5 -65 200 Cc Ip Base Current Continuous 25 A Temperature Range IB Base Current Peak 5.0 A Pp Maximum Power Dissipation 150 Ww Tec = 25C IE Emitter Current Continuous 10 A IE Emitter Current Peak 20 A Sleatel ray rtairietiog - RO faoesloee waaen e Electrical characteristics at 25C (unless otherwise sp PTC 10006 PTC 10007 Description Min. Max. Min. Max. Unit Conditions VCEO(sus) Collector-Emitter Ic = 2A,L = 2mH Sustaining Voltage 350 400 v Unclamped VCEX (sus) Collector-Emitter Ic = 14, VCEX Clamped Sustaining Voltage 400 450 v VBE (off) = 6V VCE = Rated VCBO \ Collector Cutoff Current mh | Bei = = 15V ICEV ollector Cutoff Current : mA VcE Rated cao VBE(off) = ~1.5V, Tc = + 100C IEBO Emitter Cutoff Current 175 175 mA VEB = 2V y Col F 19 1.9 Vv ic = 5A, 1B = 250mA 'CE(sat)} ollector-Emitter _ = - , Saturation Voltage 2.0 2.0 v Ic = 5A, Ip = 250mA, TC = + 100C 29 29 Vv Ic = 10A, IB = 1A VBE (sat) Base-Emitter _ _ Saturation Voltage 25 25 Vv IC = 5A, IB = 250mA h pec Gal 40 500 40 500 Ic = 2.54, VCE = 5V urrent Gain FE a 30 300 30 300 Ic = 5A, VCE = 5V VE Diode Forward Voltage 5 5 Vv IF =5A Iso Second Breakdown 10 10 VCE = 15V, Collector Current Non Rep. tp = 1s Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions td Delay Time 2 2 bs t Rise Ti 6 Vcc = 250V, Ic = 5A : a Pe 1B =.250A, Ip? = 1A tp = 20us ts Storage Time 15 15 MS VBE(off) = 6V tf Fall Time 5 5 BS Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions tsy Storage Time 3.0 3.0 MS Velamp = VCEX,IC = 5.04 IB1 = .250A, IB2 = 1A te Crossover Time 4 4 BS VBE(off) = 6V,L = 100uH tsy Storage Time 4.0 40 BS Velamp = VCEX,TC = + 100C IB1 = .250A, IB2 = 1A, Ic = 5A te Crossover Time 15 1.5 us VBE(of) = 6V.L = 1004H 279