Central BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING CODE: (SEE TABLE ON FOLLOWING PAGE) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg JA BCX54 45 45 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V ICBO VCB=30V, TA=125C IEBO VEB=5.0V BVCBO IC=100A (BCX54) 45 BVCBO IC=100A (BCX55) 60 BVCBO IC=100A (BCX56) 100 BVCEO IC=10mA (BCX54) 45 BVCEO IC=10mA (BCX55) 60 BVCEO IC=10mA (BCX56) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IC=500mA VCE=2.0V, IC=5.0mA 40 hFE hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 25 fT VCE=5.0V, IC=10mA, f=100MHz BCX55 BCX56 60 100 60 80 5.0 1.0 1.5 100 200 1.3 -65 to +150 96 TYP MAX 100 10 100 0.5 1.0 UNITS V V V A A mA mA W C C/W UNITS nA A nA V V V V V V V V 250 160 250 130 MHz R4 (30-July 2008) Central TM BCX54 BCX55 BCX56 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE DEVICE MARKING CODE BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL R4 (30-July 2008)