BUZ80A N - CHANNEL 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A V DSS R DS(on) ID 800 V <3 3.8 A TYPICAL RDS(on) = 2.5 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it BUZ80A V DS V DGR V GS Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) 800 V G ate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 3.8 A ID Drain Current (continuous) at Tc = 100 oC 2.3 A I DM (*) P tot V ISO Ts tg Tj 15 A T otal Dissipation at Tc = 25 o C Drain Current (pulsed) 100 W Derating Factor 0.8 W /o C Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (*) Pulse width limited by safe operating area November 1998 1/9 BUZ80A THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case Max 1.25 o C/W R thj -amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Valu e Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 3.8 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) 200 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A T yp. Max. 800 V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (VDS = 0) Min. Unit V o Tc = 100 C V GS = 20 V 250 1000 A A 100 nA ON () Symbo l Parameter Test Con ditions ID = 250 A V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V ID = 1.7 A Resistance V GS = 10V ID = 1.7 A I D(o n) V DS = V GS Min. T yp. Max. Unit 2 3 4 V 2.5 3 6 Tc = 100o C 3.8 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s () C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz Min. I D = 1.7A V GS = 0 T yp. Max. 1 Unit S 1100 150 35 pF pF pF BUZ80A ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Qg Q gs Q gd T yp. Max. Unit Turn-on Time Rise Time Parameter V DD = 30 V ID = 2.3 A V GS = 10 V R G = 50 (see test circuit, figure 3) Test Con ditions 65 150 90 200 ns ns Turn-on Current Slope V DD = 600 V ID = 3.8 A V GS = 10 V R G = 50 (see test circuit, figure 5) 80 110 A/s Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 55 8 26 70 nC nC nC T yp. Max. Unit 110 140 150 145 190 200 ns ns ns T yp. Max. Unit 3.8 15 A A 2 V ID = 5 A Min. V GS = 10 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. V DD = 600 V ID = 3.8 A R G = 50 V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (*) Source-drain Current Source-drain Current (pulsed) V SD () Forward On Voltage I SD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 500 ns 4.3 C 17 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 BUZ80A Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 BUZ80A Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 BUZ80A Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/9 BUZ80A Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 BUZ80A TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/9 L4 P011C BUZ80A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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