BUZ80A
N - CHANNEL 800V - 2.5
Ω
- 3.8A - TO-220
FAST POWER MOS TRANSISTOR
■TYPICALRDS(on) = 2.5 Ω
■±30V GATE TO SOURCE VOLTAGERATING
■100%AVALANCHE TESTED
■REPETITIVEAVALANCHE DATA AT 100oC
■LOW INTRINSIC CAPACITANCES
■GATECHARGE MINIMIZED
■REDUCED THRESHOLD VOLTAGESPREAD
APPLICATIONS
■HIGHCURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWER SUPPLIES(SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUZ80A
VDS Drain-source Voltage (VGS =0) 800 V
V
DGR Drain- gate Voltage (RGS =20kΩ)800 V
VGS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C3.8A
I
D
Drain Current (continuous) at Tc=100o
C2.3A
I
DM(•) Drain Current (pulsed) 15 A
Ptot Total Dissipation at Tc=25o
C100W
Derating Factor 0.8 W/oC
VISO Insulation Withstand Voltage (DC) V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulse width limited by safe operating area
TYPE VDSS RDS(on) ID
BUZ80A 800 V < 3 Ω3.8 A
November 1998
123
TO-220
1/9
THERMAL DATA
TO-220
Rthj-case Thermal Resistance Junction-case Max 1.25 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 3.8 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 200 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRatingx0.8 T
c=100o
C250
1000 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS =V
GS ID= 250 µA234V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=1.7A
V
GS = 10V ID=1.7A T
c=100
o
C2.5 3
6Ω
Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 3.8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=1.7A 1 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 1100
150
35
pF
pF
pF
BUZ80A
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =30V I
D=2.3A
R
G=50 Ω VGS =10V
(see test circuit, figure 3)
65
150 90
200 ns
ns
(di/dt)on Turn-on Current Slope VDD = 600 V ID=3.8A
R
G=50 Ω VGS =10V
(see test circuit, figure 5)
80 110 A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID=5A V
GS =10V 55
8
26
70 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 600 V ID=3.8A
R
G=50 Ω VGS =10V
(see test circuit, figure 5)
110
140
150
145
190
200
ns
ns
ns
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
3.8
15 A
A
VSD (∗) Forward On Voltage ISD =4A V
GS =0 2 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj=150o
C
(see test circuit, figure 5)
500
4.3
17
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area Thermal Impedance
BUZ80A
3/9
Derating Curve
TransferCharacteristics
Static Drain-source On Resistance
OutputCharacteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
BUZ80A
4/9
CapacitanceVariations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate ThresholdVoltage vs
Temperature
Turn-on Current Slope
Cross-overTime
BUZ80A
5/9
Switching Safe Operating Area
Source-drainDiode Forward Characteristics
AccidentalOverloadArea
BUZ80A
6/9
Fig. 1: UnclampedInductive Load TestCircuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: UnclampedInductiveWaveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
BUZ80A
7/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BUZ80A
8/9
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BUZ80A
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