TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices Qualified Level
2N3584 2N3585
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3584
2N3585
Units
Collector-Emitter Voltage VCEO 250 300 Vdc
Collector-Base Voltage VCBO 375 500 Vdc
Collector-Base Voltage VCER 300 400 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 1.0 Adc
Collector Current IC 2.0 Adc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 2.5
35 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 5.0 0C/W
1) Derate linearly @ 14.85 mW/0C for TA > +250C
2) Derate linearly @ 200 mW/0C for TC > +250C
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc 2N3584
2N3585
V(BR)CEO
250
300
Vdc
Collector-Base Breakdown Voltage
IC = 15 mAdc 2N3584
2N3585
V(BR)CER
375
500
Vdc
Collector-Emitter Cutoff Current
VCE = 150 Vdc
ICEO
5.0
mAdc
Collector-Emitter Cutoff Current
VCE = 300 Vdc, VBE = 1.5 Vdc 2N3584
VCE = 400 Vdc, VBE = 1.5 Vdc 2N3585
ICEX
1.0
1.0
mAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
0.5
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3584, 2N3585 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc
IC = 100 mAdc, VCE = 10 Vdc
hFE
25
40
100
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
VCE(sat)
0.75 Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
VBE(sat)
1.4
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 200 mAdc, VCE = 10 Vdc, f = 5.0 MHz
hfe
3.0
15
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
hfe 25
200
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = 100 mAdc; RC = 29 Ω
ton
3.0
µs
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB = -IB = 100 mAdc; RC = 29 Ω
toff
7.0
µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
Test 2
VCE = 100 Vdc, IC = 350 mAdc
Test 3
VCE = 250 Vdc, IC = 37 mAdc 2N3584
VCE = 300 Vdc, IC = 17 mAdc 2N3585
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
