Rev.1.00, Aug.20.2004, page 1 of 14
BCR10PM-12L
Triac
Medium Power Use
REJ03G0304-0100
Rev.1.00
Aug.20.2004
Features
• IT (RMS) : 10 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
• UL Recognised : Yellow Card No. E223904
File No. E80271
Outline
2
1
3
TO-220F
2
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as
TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay,
copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 2 of 14
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 10 A Commercial frequency, sine full wave
360° conduction, Tc = 85°C
Surge on-state current ITSM 100 A 60Hz sinewave 1 full cycle, peak valu e,
non-repetitive
I2t for fusing I2t 41.6 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.5 V Tc = 25°C, ITM = 15 A,
Instantaneous measurement
ΙVFGTΙ——1.5V
ΙΙ VRGTΙ——1.5V
Gate trigger voltageNote2
ΙΙΙ VRGTΙΙΙ ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙIFGTΙ——30
Note5 mA
ΙΙ IRGTΙ——30
Note5 mA
Gate trigger currentNote2
ΙΙΙ IRGTΙΙΙ ——30
Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) ——3.5°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 10 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivit y (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 3 of 14
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
1002510
1
40
20
37 10
2
425374
60
80
100
30
10
50
70
90
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120 2310–1 5710
023 5710
123 5710
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
231025710
323 5
100
231015710
223 5710
323 5710
4
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
Tj = 25°C
Tj = 125°C
V
GM
= 10V
P
GM
= 5W
I
GM
= 2A
V
GT
= 1.5V
V
GD
= 0.2V
I
RGT I
I
FGT I
, I
RGT III
P
G(AV)
=
0.5W
Typical Example
I
FGT I
I
RGT I
, I
RGT III
Typical Example
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 4 of 14
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
16
12
6
4
2
14
10
8
016
024 86 101214
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
160
120
100
60
20
04.0
00.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0 14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
0160261014
40
80
140
48
12
160
120
100
60
20
016
0261014
40
80
140
48
12
No Fins
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
All fins are black painted
aluminum and greased
360° Conduction
Resistive,
inductive loads
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 5 of 14
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
37 10
2
4
4
42537
4
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 140–40 0 40 80 120 2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
0
5710
1
23 5710
2
7
5
3
2
10
1
7
7
5
3
2
10
0
Typical Example
Typical Example
T2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
I
RGT III
I
RGT I
I
FGT I
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 6 of 14
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
6Ω6Ω
6Ω
6V6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
BCR10PM-12L
Rev.1.00, Aug.20.2004, page 7 of 14
Package Dimensions
TO-220F
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5 max
1.3 max
5.2
2.54 2.54
2.8
0.5 2.6
0.8
φ 3.2 ± 0.2
8.5
1.2
5.0
17
3.6
4.5
13.5 min
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +A BCR10PM-12LA
Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming cod e BCR10PM-12LA-A8
Note : Please confirm the specification about the shipping in d etail.
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 8 of 14
BCR10PM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
• IT (RMS) : 10 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA) Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
Outline
2
1
3
TO-220F
2
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as
TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay,
copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices
Warning
1. Refer to the recommended circuit values aroun d the triac before using.
2. Be sure to exchange the specification before using. Otherwi se, ge neral triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 9 of 14
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 10 A Commercial frequency, sine full wave
360° conduction, Tc = 110°C
Surge on-state current ITSM 100 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 41.6 A2sValue corresponding to 1 c ycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2A
Junction temperature Tj – 40 to +150 °C
Storage temperature Tstg – 40 to +150 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 2 5°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM appli ed
On-state voltage VTM ——1.5V
Tc = 25°C, ITM = 15 A,
Instantaneous measurement
ΙVFGTΙ——1.5V
ΙΙ VRGTΙ——1.5V
Gate trigger voltageNote2
ΙΙΙ VRGTΙΙΙ ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙIFGTΙ——30
Note5 mA
ΙΙ IRGTΙ——30
Note5 mA
Gate trigger currentNote2
ΙΙΙ IRGTΙΙΙ ——30
Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) ——3.5°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table be low.
5. High sensitivit y (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent waveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 10 of 14
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
2510
1
40
20
37 10
2
425
37
4
60
80
100
30
10
50
70
90
0
1.5 2.5 3.51.00.5 2.0 3.0 4.0
10
2
7
5
3
2
10
1
7
5
7
5
3
2
10
0
10
0
2310
1
5710
2
23 5710
3
23 5710
4
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
10
2
5
10
1
7
2
3
10
3
5
7
2
3
–60 –20 20 60 100 160140–40 0 40 80 120
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
2310
2
5710
3
23 5
Tj = 25°C
Tj = 150°C
V
GM
= 10V
P
GM
= 5W
I
GM
= 2A
V
GT
= 1.5V
I
FGT I
, I
RGT III
I
RGT I
V
GD
= 0.1V
P
G(AV)
=
0.5W
Typical Example
I
RGT I
, I
RGT III
I
FGT I
Typical Example
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 11 of 14
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
123 57 23 57
10
2
10
5
23 57 23 57
16
12
6
4
2
14
10
8
016
024 86101214
160
120
100
60
20
016
02 6 10 14
40
80
140
48
12
160
120
100
60
20
04.0
0 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
160
120
100
60
20
016
02 6 10 14
40
80
140
48
12
No Fins
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example
360° Conduction
Resistive,
inductive loads
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 12 of 14
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
–60 –20 20 60 100 140 160–40 0 40 80 120
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–40 0 40 80 120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
Typical Example
T2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution
Typical Example
Tj = 125°C
Typical Example
III Quadrant
I Quadrant
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 13 of 14
C
1
= 0.1 to 0.47µF
R
1
= 47 to 100Ω
C
0
= 0.1µF
R
0
= 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
37 10
2
4
4
42537
4
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
IRGT III
IRGT I
IFGT I
Load
BCR10PM-12L (The product guaranteed maximum junction temperature o f 150°C)
Rev.1.00, Aug.20.2004, page 14 of 14
Package Dimensions
TO-220F
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5 max
1.3 max
5.2
2.54 2.54
2.8
0.5 2.6
0.8
φ 3.2 ± 0.2
8.5
1.2
5.0
17
3.6
4.5
13.5 min
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +B BCR10PM-12LB
Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code BCR10PM-12LB-A8
Note : Please confirm the specification about the shipping in d etail.
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