Single Diode Super Fast Recovery Diode Dat Al Msi OUTLINE Package : 1F 7O0V 0.8A e /)\@/SMD Small SMD * Bitz High Voltage e(R/12X Low Noise Vam=/00V Vam=700V eDC/DCAIYINZ DC/DC Converter eA2AtyvFVIRE = Switching Regulator | AYE VF tin ea Type No Weight 0.058(Typ) / Cathode mark Date code 4 D442 Unit?!mm 1 to 0 734ihIL Fly Wheel RB, OA, F889 Home Appliance, Office Automation, Lighting jFlZ.FA Communication, Factory Automation WIE Lv. TIL IC Web 4 b Mit CRAB BtKX RATINGS @MxtRAZH Absolute Maximum Ratings Gh#eoOez ie TI=25C) Pav, fla ilovec ae For details of the outline dimensions, (hake CHEE FS vo. Wax) & OSI refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". A ay | A te th % Hie Item Symbol] Conditions Beone: Eo Unit (TIE a 9 Storage Temperature Tstg 55~ 150 Cc Hey bie . 9 Operation Junction Temperature Tj 150 Cc +f A SEE 7 Maximum Reverse Valtage Va 700 \ cage TS FEMI HI vitae I 5OH2 IERIE, MLE A Tae #6 On alumina substrate us A Average Rectified Forward Current o 50Hz sine wave, Resistance load aay UY b HEME i Ta=33U On glass-epoxy substrate 0.6 at AS YN RE es 50H 2 IEG, JER GKLI 4 2 ea Af, T]=25T 95 A Peak Surge Forward Current FSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25C @BAA-AAH Electrical Characteristics (##2O% VHA TI=25C) Meat EE " _ ro AWG : Forward Voltage Vi Ir=0.8A, Pulse measurement MAX 1.3 V ei Hit h=V AU AME Reverse Current Ir Vr=VRM. Pulse measurement MAX 10 uA ae ete trr | Ir=05A,IR=1A MAX 400 ns eet . = Mus Wo= r a Tear Capacitance Cj f= 1MHz, Vr= L0V TYP 7 pF eA ak: FM a il Junction to lead MAX 23 MHL FS FAME Thermal Resistance 48-p fi FA BELT On alumina substrate MAX 108 c/W Aja Junction to ambient Tl) y PALMAE MAX On glass-epoxy substrate 157 180 = (v532-1) www.shindengen.co.jp/product/semilSmall SMD Mist CHARACTERISTIC DIAGRAMS Super FRD (Single) D1FK70 NGF Ta et Forward Voltage > Ti CIMAX) - Th= IAYC(TYP) T= 27C(MAX) + T= 25C(TYP) Forward Current le (A) (Pulse measurement] Forward Voltage Vr (V] NEF 7798 thee Forward Power Dissipation =sE=Io ol itp WP HD= tp/T i Tj= iat Forward Power Dissipation Pr [(W) Average Rectified Forward Current lo (A) AR Y IBt m Peak Surge Forward Current Capability 7 Sine wave AC) = j__f Oms lms: Teycle Peak Surge Forward Current Isom [A) Number of Cycles (cycle) F4lF4yYINT Ta-lo Derating Curve Ta-lo da On alumina substrate LVe 1 Ve= View _P | D=tp/T Average Rectified Forward Current Io CA) Ambient Temperature Ta (C) F4lF4vINT Ta-lo Derating Curve Ta-lo I On glass-epoxy substrate a4 Average Rectified Forward Current Io [A) Ambient Temperature Ta [C] EeSaH Junction Capacitance f=1MHz T=29C TYP Junction Capacitance Cj (pF) Reverse Voltage Vr (V) * Sine wave (50H2 THE LTV ET, * 50Hz sine wave is used for measurements. ERE OFTELL HAIL tS Sai otHDET. Typical SHANKS RL ET # Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semil (J532-1) 181