VS-STPS1045BPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode 4, 2 * Popular D-PAK outline * Small foot print, surface mountable * Low forward voltage drop 1 Anode D-PAK (TO-252AA) * High frequency operation 3 Anode * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 10 A VR 45 V VF at IF 0.57 V IRM 15 mA at 125 C TJ max. 175 C Diode variation Single die EAS 20 mJ * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-STPS1045BPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform 10 A 45 V IFSM tp = 5 s sine 390 A VF 10 Apk, TJ = 125 C 0.57 V TJ Range -40 to +175 C IF(AV) CHARACTERISTICS VRRM VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-STPS1045BPbF UNITS 45 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 3.0 A, L = 4.40 mH 20 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 3.0 A Repetitive avalanche current 50 % duty cycle at TC = 151 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 10 390 A 75 Revision: 14-Jan-11 Document Number: 94323 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS1045BPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 10 A Maximum forward voltage drop See fig. 1 VFM (1) 10 A IRM (1) 0.84 TJ = 25 C V 0.57 TJ = 125 C 0.72 0.2 VR = Rated VR TJ = 125 C UNITS 0.63 TJ = 25 C 20 A 20 A Maximum reverse leakage current See fig. 2 VALUES mA 15 Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 760 pF Typical series inductance LS Measured lead to lead 5 mm from package body 5.0 nH 10 000 V/s Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation See fig. 4 UNITS -40 to +175 C 3.0 C/W 50 Approximate weight Marking device VALUES Case style D-PAK (similar to TO-252AA) 0.3 g 0.01 oz. STPS1045B Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 14-Jan-11 Document Number: 94323 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS1045BPbF www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 10 TJ = 175 C TJ = 125 C TJ = 25 C TJ = 175 C 100 TJ = 150 C 10 TJ = 125 C TJ = 100 C 1.0 TJ = 75 C 0.1 TJ = 50 C 0.01 TJ = 25 C 0.001 0.0001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1.6 1.8 2.0 10 20 30 40 50 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 C 100 0 10 20 30 50 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 14-Jan-11 Document Number: 94323 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS1045BPbF Vishay Semiconductors 16 180 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com 170 DC 160 Square wave (D = 0.50) 80 % rated VR applied 150 RMS limit 14 12 10 8 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 6 4 DC 2 See note (1) 0 140 0 2 4 6 8 10 12 14 0 16 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 14-Jan-11 Document Number: 94323 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS1045BPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- STPS 1 2 10 45 B 3 4 5 TRL PbF 6 1 - Vishay Semiconductors product 2 - Schottky STPS series 3 - Current rating (10 A) 4 - Voltage rating (45 = 45 V) 5 - B = essential part number 6 - 7 - 7 None = tube (50 pieces) TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 Revision: 14-Jan-11 Document Number: 94323 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) O1 4 O2 4 B Seating plane H D (5) 1 2 3 (2) L5 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail "C" Rotated 90 CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL 2 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail "C" 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 MILLIMETERS INCHES C Seating plane C O L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 1.40 1.78 0.055 0.070 2.29 BSC MIN. MAX. 0.090 BSC b 0.64 0.89 0.025 0.035 L b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.74 BSC L2 0.51 BSC NOTES 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 O 0 10 0 10 E 6.35 6.73 0.250 0.265 5 O1 0 15 0 15 E1 4.32 - 0.170 - 3 O2 25 35 25 35 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Revision: 05-Dec-12 Document Number: 95016 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000