VS-STPS1045BPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 1Document Number: 94323
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High Performance Schottky Rectifier, 10 A
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-STPS1045BPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 10 A
VR45 V
VF at IF0.57 V
IRM 15 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 20 mJ
Anode
13
Base
cathode
Anode
4, 2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 10 A
VRRM 45 V
IFSM tp = 5 μs sine 390 A
VF10 Apk, TJ = 125 °C 0.57 V
TJRange -40 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS1045BPbF UNITS
Maximum DC reverse voltage VR45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 151 °C, rectangular waveform 10
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
390
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH 20 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 3.0 A