TGF4260-SCC - TriQuint Semiconductor

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

9.6 mm Discrete HFET TGF4260-SCC

Key Features and Performance

• 9600 µm x 0.5 µm HFET

• Nominal Pout of 37dBm at 6 GHz

• Nominal Gain of 9.5dB at 6 GHz

• Nominal PAE of 52% at 6 GHz

• Frequency Range: DC - 10.5 GHz

• Suitable for high reliability applications

• 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)

Description

The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure

Field Effect Transistor (HFET) designed for high efficiency power applications up to

10.5 GHz in Class A and Class AB operation.

Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.

Bond pad and backside metallization are gold plated for compatibility with eutectic

alloy attach methods as well as thermocompression and thermosonic wire bonding

processes.

The TGF4260-SCC is readily assembled using automatic equipment.

Primary Applications

• Cellular Base Stations

• High-reliability space

• Military

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TABLE I

MAXIMUM RATINGS

SYMBOL PARAMETER 1/ VALUE NOTES

VDS Drain to Source Voltage 12 V

VGS Gate to Source Voltage Range 0 to -5.0 Volts

PDPower Dissipation 6.8 W 2/

TCH Operating Channel Temperature 150°C3/, 4/

TSTG Storage Temperature -65 to 200°C

TMMounting Temperature (30 seconds) 320°C

1/ These ratings represent the maximum values for this device. Stresses beyond those listed

under “Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only, and functional operation of the device at these or any other conditions beyond

those indicated under “DC Probe Characteristics” is not implied. Exposure to maximum rated

conditions for extended periods may affect device reliability.

2/ When operated at this bias condition with a base plate temperature of 70 0C, the MTTF life is

reduced from 1.7 E+12 to 3 E+9 hours.

3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For

maximum life, it is recommended that junction temperatures be maintained at the

lowest possible levels

4/ These ratings apply to each individual FET

TGF4260-SCC

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TABLE II

DC PROBE CHARACTERISTICS

(TA = 25 °C, Nominal)

Symbol Parameter Minimum Typical Maximum Unit Note

IDSS Saturated Drain Current -- 2352 -- mA 1/

GMTransconductance -- 1584 -- mS 1/

VPPinch-off Voltage 1 1.85 3 V 2/

VBGS Breakdown Voltage

Gate-Source

17 22 30 V 2/

VBGD Breakdown Voltage

Gate-Drain

17 22 30 V 2/

1/ Total for eight FETS

2/ VP, VBGS, and VBGD are negative.

TABLE III

ELECTRICAL CHARACTERISTICS

(TA = 25 °C, Nominal)

Bias Conditions: Vd = 8.5 V, Id = 520 mA

Symbol Parameter Typical Unit

Pout Output Power 37 dBm

Gp Power Gain 9.5 dB

PAE Power Added Efficiency 52 %

TGF4260-SCC

TABLE IV

THERMAL INFORMATION*

Parameter Test Conditions TCH

(oC)

RqJC

(°C/W)

(HRS)

RqJC Thermal

Resistance

(channel to backside

of carrier)

Vd = 8.5 V

ID = 520 mA

Pdiss = 6.8 W

101.64 7.16 1.7 E+12

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil

CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF

applied, 100% of DC power is dissipated.

* The thermal information is a result of a detailed thermal model.

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TGF4260-SCC

TYPICAL PERFORMANCE

(TA = 25 °C, Nominal)

Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

1.25

16 18 20 22 24 26 28 30

Input Power (dBm)

Drain Current (A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

012345678910

Drain Voltage (V)

Drain Current (A)

-2.25 V

-2.0 V

-1.75 V

-1.5 V

-1.25 V

-1.0 V

-0.75 V

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TGF4260-SCC

TYPICAL PERFORMANCE

16 18 20 22 24 26 28 30

Input Power (dBm)

Gain (dB)

16 18 20 22 24 26 28 30

Input Power (dBm)

PAE (%)

Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TYPICAL PERFORMANCE

Bias Conditions: F = 6 GHz, Vd = 8.5 V, Iq = 795 mA

16 18 20 22 24 26 28 30

Input Power (dBm)

Output Power (dBm)

TGF4260-SCC

Bias Conditions: F = 6 GHz, Vd = 8.5 V, Id = 520 mA

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

FREQ

(GHz)

S11

MAG

ANG (°)

deg

S21

MAG

ANG (°)

deg

S12

MAG

ANG (°)

deg

S22

MAG

ANG (°)

deg

0.5 -0.377 -142.378 16.279 105.604 -35.345 18.236 -2.334 -175.122

1.0 -0.368 -160.678 10.599 93.104 -35.031 9.671 -2.176 -176.556

1.5 -0.364 -167.064 7.118 86.611 -35.026 6.854 -2.126 -176.745

2.0 -0.360 -170.296 4.606 81.733 -35.090 5.622 -2.086 -176.594

2.5 -0.356 -172.250 2.630 77.536 -35.194 5.098 -2.044 -176.322

3.0 -0.351 -173.564 0.994 73.710 -35.320 5.000 -1.998 -176.008

3.5 -0.346 -174.511 -0.409 70.122 -35.473 5.217 -1.947 -175.688

4.0 -0.340 -175.232 -1.643 66.712 -35.645 5.705 -1.892 -175.382

4.5 -0.333 -175.802 -2.750 63.445 -35.831 6.448 -1.834 -175.099

5.0 -0.327 -176.269 -3.756 60.305 -36.027 7.442 -1.774 -174.846

5.5 -0.320 -176.662 -4.682 57.281 -36.233 8.690 -1.712 -174.627

6.0 -0.313 -177.000 -5.543 54.367 -36.444 10.198 -1.648 -174.441

6.5 -0.305 -177.297 -6.349 51.559 -36.648 11.968 -1.585 -174.290

7.0 -0.298 -177.562 -7.108 48.855 -36.845 14.002 -1.522 -174.172

7.5 -0.290 -177.803 -7.828 46.254 -37.028 16.295 -1.459 -174.084

8.0 -0.283 -178.025 -8.513 43.753 -37.190 18.833 -1.398 -174.026

8.5 -0.276 -178.231 -9.167 41.353 -37.323 21.596 -1.338 -173.995

9.0 -0.269 -178.424 -9.794 39.050 -37.419 24.556 -1.280 -173.988

9.5 -0.262 -178.607 -10.398 36.846 -37.484 27.673 -1.224 -174.004

10 -0.255 -178.782 -10.979 34.737 -37.503 30.902 -1.170 -174.039

10.5 -0.249 -178.949 -11.540 32.724 -37.477 34.192 -1.119 -174.091

11.0 -0.242 -179.110 -12.084 30.804 -37.406 37.493 -1.069 -174.160

11.5 -0.236 -179.266 -12.611 28.976 -37.291 40.755 -1.022 -174.241

12.0 -0.230 -179.417 -13.124 27.239 -37.140 43.932 -0.977 -174.335

12.5 -0.225 -179.564 -13.622 25.593 -36.948 46.987 -0.934 -174.438

13.0 -0.219 -179.708 -14.107 24.034 -36.719 49.893 -0.893 -174.551

13.5 -0.214 -179.848 -14.581 22.563 -36.472 52.628 -0.854 -174.670

14.0 -0.209 -179.986 -15.043 21.177 -36.199 55.182 -0.817 -174.796

Unmatched Modeled S-Parameter Data for the

TGF4260-SCC

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during

handing, assembly and test.

TGF4260-SCC

Mechanical Drawing

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

Product Data Sheet

March 31, 2003

TGF4260-SCC

Assembly Process Notes

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

Reflow process assembly notes:

· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec

· An alloy station or conveyor furnace with reducing atmosphere should be used.

· No fluxes should be utilized.

· Coefficient of thermal expansion matching is critical for long-term reliability.

· Devices must be stored in a dry nitrogen atmosphere.

Component placement and adhesive attachment assembly notes:

· Vacuum pencils and/or vacuum collets are the preferred method of pick up.

· Air bridges must be avoided during placement.

· The force impact is critical during auto placement.

· Organic attachment can be used in low-power applications.

· Curing should be done in a convection oven; proper exhaust is a safety concern.

· Microwave or radiant curing should not be used because of differential heating.

· Coefficient of thermal expansion matching is critical.

Interconnect process assembly notes:

· Thermosonic ball bonding is the preferred interconnect technique.

· Force, time, and ultrasonics are critical parameters.

· Aluminum wire should not be used.

· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.

· Maximum stage temperature is 200 °C.

Note: Die are shipped in gel pack unless otherwise specified.