LL103A/103B/103C
Document Number 85630
Rev. 1.4, 27-Jul-06
Vishay Semiconductors
www.vishay.com
1
94 9371
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• HF-Detector
• Protection circuit
• Small battery charger
• AC-DC/DC-DC converters
Mechanical Data
Case: MiniMELF Glass case SOD80
Weight: approx. 31 mg
Cathode Band Color: black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Typ e Ma rk i ng Remarks
LL103A VR = 40 V, VF at IF = 20 mA max. 370 mV LL103A-GS08 or LL103A-GS18 -Tape and Reel
LL103B VR = 30 V, VF at IF = 20 mA max. 370 mV LL103B-GS08 or LL103B-GS18 -Tape and Reel
LL103C VR = 20 V, VF at IF = 20 mA max. 370 mV LL103C-GS08 or LL103C-GS18 -Tape and Reel
Parameter Test condition Part Symbol Value Unit
Reverse voltage LL103A VR40 V
LL103B VR30 V
LL103C VR20 V
Forward continuous current IFAV 200 mA
Peak forward surge current tp = 300 µs, square pulse IFSM 15 A
Power dissipation l = 4 mm, TL = constant Ptot 400 mW
e2
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Document Number 85630
Rev. 1.4, 27-Jul-06
LL103A/103B/103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 250 K/W
Junction temperature Tj125 °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 50 µA LL103A V(BR) 40 V
LL103B V(BR) 30 V
LL103C V(BR) 20 V
Leakage current VR = 30 V LL103A IR5µA
VR = 20 V LL103B IR5µA
VR = 10 V LL103C IR5µA
Forward voltage drop IF = 20 mA VF370 mV
IF = 200 mA VF600 mV
Diode capacitance VR = 0 V, f = 1 MHz CD50 pF
Reverse recovery time IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr 10 ns
Figure 1. Forward Current vs. Forward Voltage
IF - Forward Current (mA)
0 100 200 300 400 500 600 700 800 900 1000
VF - Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
Figure 2. Forward Current vs. Forward Voltage
I
F
- Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
- Forward Voltage (V)
16766
LL103A/103B/103C
Document Number 85630
Rev. 1.4, 27-Jul-06
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches): SOD80
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
10 000
20 40 60 800 100 120 140 160
T - Junction Temperature (°C)
16767_1
I - Reverse Current (µA)
Reverse voltage
LL103A V = 40 V
LL103B V = 30 V
LL103C V
= 20 V
j
R
R
R
R
0
5
10
15
20
25
30
0 1015202530
VR - Reverse Voltage (V)
16768
CD - Diode Capacitance (pF)
f = 1 MHz
5
Figure 5. Typ. Non Repetitive Forward Surge Current vs.
Pulse width
0
5
10
15
20
25
0.1 1.0 10.0
tP - Pulse width (ms)
16769
Itot - Typ. Non Repetitve
Forward Surge Current (A)
96 12070
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Document Number 85630
Rev. 1.4, 27-Jul-06
LL103A/103B/103C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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