1N4148WS-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES * Silicon epitaxial planar diodes * Fast switching diodes * Circuit configuration: Single diode 2 1 * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 = Cathode 2 = Anode 22611 20145 Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 MECHANICAL DATA MARKING (example only) Case: SOD-323 XY Weight: approx. 4 mg Packaging codes/options: 22610 Bar = cathode marking Y = type code X = date code 18/10K per 13" reel (8 mm tape), 10 K/box 08/3K per 7" reel (8 mm tape), 12.5 K/box PARTS TABLE PART 1N4148WS-V-G ORDERING CODE TYPE MARKING REMARKS 1N4148WS-V-G-18 or 1N4148WS-V-G-08 AH Tape and Reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage UNIT VR 75 V 100 V f 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 C IFSM 350 mA Ptot 200 mW Average rectified current half wave rectification with resistive load (1) Power VALUE VRRM Repetitive peak reverse voltage Surge forward current SYMBOL dissipation(1) Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature Storage temperature range SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 C Tstg - 65 to + 150 C Note (1) Valid provided that electrodes are kept at ambient temperature Revision: 1.0, 26-Oct-11 Document Number: 85875 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-V-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 10 mA VF 1000 mV IF = 100 mA VF 1200 mV VR = 20 V IR 25 nA VR = 75 V IR 5 A VR = 100 V IR 100 A VR = 20 V, Tj = 150 C IR 50 A VF = VR = 0 V CD 4 pF IP = 0.1 s, rise time < 30 ns tp = (5 to 100) kHz Vfr 2.5 V IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Forward voltage Leakage current Diode capacitance Voltage rise when switching on (tested with 50 mA pulses) Reverse recovery time MIN. TYP. TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 250 Ptot - Power Dissipation (mW) 103 102 Tj = 100 C Tj = 25 C IF (mA) 10 1 10-1 200 150 100 50 10-2 0 1 0 Fig. 1 - Forward Characteristics 50 100 150 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 C 5 10 Tj = 25 C 1.1 f = 1 MHz f = 1 kHz 2 200 Tamb - Ambient Temperature (C) 20324 VF (V) 17437 0 2 3 1.0 CD (VR) 2 102 5 CD (0 V) Rf () 5 0.9 0.8 2 10 5 0.7 2 10-2 10-1 17438 1 10 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Revision: 1.0, 26-Oct-11 0 102 IF (mA) 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Document Number: 85875 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148WS-V-G www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 100 0 17441 200 Tj (C) Fig. 5 - Leakage Current vs. Junction Temperature 0.1 (0.004) max. 0 to 8 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Revision: 1.0, 26-Oct-11 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 85875 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000