LM5060MM/NOPB - NATIONAL SEMICONDUCTOR

VIN VOUT

STATUS

UVLO

OVP TIMER

GND

OUT

SENSE GATE

VIN

LM5060

GND GND

nPGD

High = Fault, Low= OK

High = On, Low= Off

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

LM5060 High-Side Protection Controller With Low Quiescent Current

1 Features

1• Available in Automotive Grade / AEC Q-100

• Wide operating input voltage range:

5.5 V to 65 V

•Functional safety capable

– Documentation available to aid functional

safety system design

• Less than 15-µA quiescent current in disabled

mode

• Controlled output rise time for safe connection of

capacitive loads

• Charge pump gate driver for external N-Channel

MOSFET

• Adjustable Undervoltage Lockout (UVLO) with

hysteresis

• UVLO Serves as second enable input for systems

requiring safety redundancy

• Programmable fault detection delay time

• MOSFET latched off after load fault is detected

• Active low open drain POWER GOOD (nPGD)

output

• Adjustable input Overvoltage Protection (OVP)

• Immediate restart after overvoltage shutdown

• 10-Lead VSSOP

2 Applications

• Automotive body electronics

• Industrial power distribution and control

3 Description

The LM5060 high-side protection controller provides

intelligent control of a high-side N-channel MOSFET

during normal on/off transitions and fault conditions.

In-rush current is controlled by the nearly constant

rise time of the output voltage. A POWER GOOD

output indicates when the output voltage reaches the

input voltage and the MOSFET is fully on. Input

UVLO (with hysteresis) is provided as well as

programmable input OVP. An enable input provides

remote on or off control. The programmable UVLO

input can be used as second enable input for safety

redundancy. A single capacitor programs the initial

start-up VGS fault detection delay time, the transition

VDS fault detection delay time, and the continuous

over-current VDS fault detection delay time. When a

detected fault condition persists longer than the

allowed fault delay time, the MOSFET is latched off

until either the enable input or the UVLO input is

toggled low and then high.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM5060 VSSOP (10) 3.00 mm × 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Typical Application Circuit

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 5

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 7

7 Detailed Description............................................ 11

7.1 Overview................................................................. 11

7.2 Functional Block Diagram....................................... 11

7.3 Feature Description................................................. 12

7.4 Device Functional Modes........................................ 12

8 Application and Implementation ........................ 14

8.1 Application Information............................................ 14

8.2 Typical Applications ................................................ 18

9 Power Supply Recommendations...................... 30

10 Layout................................................................... 31

10.1 Layout Guidelines ................................................. 31

10.2 Layout Example .................................................... 31

10.3 Thermal Considerations........................................ 32

11 Device and Documentation Support................. 33

11.1 Documentation Support ........................................ 33

11.2 Community Resources.......................................... 33

11.3 Trademarks........................................................... 33

11.4 Electrostatic Discharge Caution............................ 33

11.5 Glossary................................................................ 33

12 Mechanical, Packaging, and Orderable

Information........................................................... 33

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision G (January 2016) to Revision H Page

• Added Functional safety capable link to the Features section............................................................................................... 1

• Changed the GATE to GND Absolute Maximum from 75 V to 79 V ..................................................................................... 4

• Added GATE to GND to the Recommended Operating Conditions table.............................................................................. 4

Changes from Revision F (April 2013) to Revision G Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section.................................................................................................. 1

Changes from Revision E (April 2013) to Revision F Page

• Changed layout of National Data Sheet to TI format ........................................................................................................... 27

OVP

GND

TIMER

OUT

VIN

SENSE GATE

UVLO

LM5060Q1MM

nPGD

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(1) I = Input, O = Output, P = Power

5 Pin Configuration and Functions

DGS Package

10-Pin VSSOP

Top View

Pin Functions

PIN TYPE(1) DESCRIPTION

NO. NAME

1 SENSE I Input voltage sense: a constant current sink (16 μA typical) at the SENSE pin flows through an external

resistor to set the threshold for fault detection.

2 VIN P Supply voltage input: the operating voltage range is 5.5 V to 65 V. The internal power-on-reset (POR)

circuit typically switches to the active state when the VIN pin is greater than 5.1 V. A small ceramic

bypass capacitor close to this pin is recommended to suppress noise.

3 OVP I Over-voltage protection comparator input: an external resistor divider from the system input voltage sets

the Over-Voltage turn-off threshold. The GATE pin is pulled low when OVP exceeds the typical 2.0-V

threshold, but the controller is not latched off. Normal operation resumes when the OVP pin falls below

typically 1.76 V.

4 UVLO I

Under-voltage lock-out comparator input: the UVLO pin is used as an input under-voltage lock-out by

connecting this pin to a resistor divider between input supply voltage and ground. The UVLO comparator

is activated when EN is high. A voltage greater than typically 1.6 V at the UVLO pin will release the pull

down devices on the GATE pin and allow the output to gradually rise. A constant current sink (5.5 µA

typical) is provided to ensure the UVLO pin is low in an open circuit condition.

5 EN I Enable input: a voltage less than 0.8 V on the EN pin switches the LM5060 to a low current shutdown

state. A voltage greater than 2.0 V on the EN pin enables the internal bias circuitry and the UVLO

comparator. The GATE pin pull-up bias is enabled when both EN and UVLO are in the high state. A

constant current sink (6 µA typical) is provided to ensure the EN pin is low in an open circuit condition.

6 GND – Circuit ground

7 TIMER I/O Timing capacitor: an external capacitor connected to this pin sets the VDS fault detection delay time. If the

TIMER pin exceeds the 2.0-V threshold condition, the LM5060 will latch off the MOSFET and remain off

until either the EN, UVLO or VIN (POR) input is toggled low and then high.

8 nPGD O Fault status: an open drain output. When the external MOSFET VDS decreases such that the OUT pin

voltage exceeds the SENSE pin voltage, the nPGD indicator is active (low = no fault).

9 OUT I Output voltage sense: connect to the output rail (external MOSFET source). Internally used to detect VDS

and VGS conditions.

10 GATE O Gate drive output: connect to the external MOSFET’s gate. A charge-pump driven constant current

source (24 µA typical) charges the GATE pin. An internal zener clamps the GATE pin at typically 16.8 V

above the OUT pin. The ΔV/Δt of the output voltage can be reduced by connecting a capacitor from the

GATE pin to ground.

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3) The Absolute Maximum Rating for VIN (75 V) applies only when the LM5060 is disabled.

(4) The minimum voltage of –1 V is allowed if the current is limited to below –25 mA. Also it is assumed that the negative voltage on the

pins only occur during reverse battery condition when a positive supply voltage (Vin) is not applied.

(5) The minimum voltage of –25 V is allowed if the current is limited to below –25 mA. Also it is assumed that the negative voltage on the

pins only occur during reverse battery condition when a positive supply voltage (VIN) is not applied.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)

MIN MAX UNIT

VIN to GND(3)(4) –0.3 75 V

SENSE, OUT to GND(5) –0.3 75 V

GATE to GND(3)(5) –0.3 79 V

EN, UVLO to GND(4) –0.3 75 V

nPGD, OVP to GND –0.3 75 V

TIMER to GND –0.3 7 V

Peak reflow temperature 260 °C

Operating junction temperature 150 °C

Storage temperature, Tstg –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT

VIN Supply voltage 5.5 65 V

EN Enable voltage 0 65 V

GATE to

GND 0 79 V

UVLO Undervoltage lock-out voltage 0 65 V

nPGD POWER GOOD off voltage 0 65 V

POWER GOOD sink current 0 5 mA

TJOperating junction temperature –40 125 °C

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(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

6.4 Thermal Information

THERMAL METRIC(1) LM5060

UNITDGS (VSSOP)

10 PINS

RθJA Junction-to-ambient thermal resistance 162.1 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 57.3 °C/W

RθJB Junction-to-board thermal resistance 81.9 °C/W

ψJT Junction-to-top characterization parameter 5.8 °C/W

ψJB Junction-to-board characterization parameter 80.6 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W

(1) The GATE pin voltage is typically 12 V above the VIN pin when the LM5060 is enabled. Therefore, the Absolute Maximum Rating for

VIN (75 V) applies only when the LM5060 is disabled, or for a momentary surge to that voltage since the Absolute Maximum Rating for

the GATE pin is also 75 V.

6.5 Electrical Characteristics

Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ=

25°C. Limits in standard type are for TJ= 25°C except where noted. Minimum and Maximum limits are ensured through test,

design, or statistical correlation. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for

reference purposes only.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VIN PIN

IIN-EN Input current, enabled mode TJ= 25°C 1.4 mA

TJ= –40°C to 125°C 1.7

IIN-DIS Input current, disabled mode EN = 0.50 V TJ= 25°C 9 µA

TJ= –40°C to 125°C 15

IIN-STB Input current, standby mode UVLO = 0.00 V TJ= 25°C 0.56 mA

TJ= –40°C to 125°C 0.80

POREN Power on reset threshold at

VIN VIN rising TJ= 25°C 5.1 V

TJ= –40°C to 125°C 5.46

POREN-HYS POREN hysteresis VIN falling 500 mV

OUT PIN

IOUT-EN OUT pin bias current, enabled OUT = VIN, normal operation TJ= 25°C 8 µA

TJ= –40°C to 125°C 5.0 11.0

IOUT-DIS OUT pin leakage current,

disabled(1) Disabled, OUT = 0 V, SENSE = VIN 0 μA

SENSE PIN

ISENSE Threshold programming

current SENSE pin bias current TJ= 25°C 16 µA

TJ= –40°C to 125°C 13.6 18.0

VOFFSET VDS comparator offset voltage SENSE - OUT voltage for

fault detection TJ= 25°C 0 mV

TJ= –40°C to 125°C –7.0 7.0

IRATIO ISENSE and IOUT-EN current ratio ISENSE / IOUT-EN TJ= 25°C 2.0

TJ= –40°C to 125°C 1.70 2.30

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Electrical Characteristics (continued)

Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ=

25°C. Limits in standard type are for TJ= 25°C except where noted. Minimum and Maximum limits are ensured through test,

design, or statistical correlation. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for

reference purposes only.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

OVP INPUT

OVPTH OVP threshold OVP pin threshold voltage rising TJ= 25°C 2.0 V

TJ= –40°C to 125°C 1.88 2.12

OVPHYS OVP hysteresis 240 mV

OVPDEL OVP delay time Delay from OVP pin > OVPTH to GATE low 9.6 µs

OVPBIAS OVP pin bias current OVP = 1.9 V TJ= 25°C 0 µA

TJ= –40°C to 125°C 0.50

UVLO INPUT

UVLOTH UVLO threshold UVLO pin threshold voltage rising TJ= 25°C 1.6 V

TJ= –40°C to 125°C 1.45 1.75

UVLOHYS UVLO hysteresis TJ= 25°C 180 mV

TJ= –40°C to 125°C 120 230

UVLOBIAS UVLO pin pull-down current TJ= 25°C 5.5 µA

TJ= –40°C to 125°C 3.8 7.2

EN INPUT

ENTHH High-level input voltage TJ= –40°C to 125°C 2.00 V

ENTHL Low-level input voltage TJ= –40°C to 125°C 0.80 V

ENHYS EN threshold hysteresis 200 mV

ENBIAS EN pin pull-down current TJ= 25°C 6 µA

TJ= –40°C to 125°C 8.0

GATE CONTROL (GATE PIN)

IGATE Gate charge (sourcing) current,

on state On-state TJ= 25°C 24 µA

TJ= –40°C to 125°C 17 31

IGATE-OFF Gate discharge (sinking)

current, off state UVLO = 0.00 V 2.2 mA

IGATE-FLT Gate discharge (sinking)

current, fault state OUT < SENSE 80 mA

VGATE Gate output voltage in normal

operation GATE - VIN voltage

GATE pin open TJ= 25°C 12 V

TJ= –40°C to 125°C 10 14

VGATE-TH VGS status comparator

threshold voltage GATE - OUT threshold voltage for

TIMER voltage reset and

TIMER current change

TJ= 25°C 5 V

TJ= –40°C to 125°C 3.50 6.50

VGATE-CLAMP Zener clamp between GATE

pin and OUT pin IGATE-CLAMP = 0.1 mA 16.8 V

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Electrical Characteristics (continued)

Unless otherwise stated the following conditions apply: VIN = 14 V, EN = 2.00 V, UVLO = 2.00 V, OVP = 1.50 V, and TJ=

25°C. Limits in standard type are for TJ= 25°C except where noted. Minimum and Maximum limits are ensured through test,

design, or statistical correlation. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for

reference purposes only.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIMER (TIMER PIN)

VTMRH Timer fault threshold TIMER pin voltage rising 2.0 V

VTMRL Timer re-enable threshold TIMER pin voltage falling 0.30 V

ITIMERH Timer charge current for VDS

fault TIMER charge current

after start-up

VGS = 6.5 V

TJ= 25°C 11 µA

TJ= –40°C to 125°C 8.5 13.0

ITIMERL Timer start-up charge current TIMER charge current

during start-up

VGS = 3.5 V

TJ= 25°C 6 µA

TJ= –40°C to 125°C 4.0 7.0

ITIMERR Timer reset discharge current TIMER pin = 1.5 V TJ= 25°C 6 mA

TJ= –40°C to 125°C 4.4 8.2

tFAULT Fault to GATE low delay TIMER pin > 2.0 V

No load on GATE pin 5 µs

POWER GOOD (nPGD PIN)

PGDVOL Output low voltage ISINK = 2 mA TJ= 25°C 80 mV

TJ= –40°C to 125°C 205

PGDIOH Off leakage current VnPGD = 10 V TJ= 25°C 0.02 µA

TJ= –40°C to 125°C 1.00

6.6 Typical Characteristics

Figure 1. VIN Pin Current vs VIN Pin Voltage Figure 2. VGATE, VIN Voltage vs Input Voltage

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Typical Characteristics (continued)

Figure 3. OUT Pin Current (IOUT-EN) vs VIN Voltage Figure 4. GATE Current (IGATE) vs VIN Voltage

Figure 5. SENSE Current (ISENSE) vs VIN Voltage Figure 6. nPGD Low Voltage (PGDVOL vs Sink Current)

Figure 7. GATE Pull-Down Current Off (IGATE-OFF)

vs GATE Voltage Figure 8. EN Threshold Voltage (ENTH) vs Temperature

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Typical Characteristics (continued)

Figure 9. UVLO Threshold Voltage (UVLOTH)

vs Temperature Figure 10. GATE Pull-Down Current Fault (IGATE-FLT)

vs GATE Voltage

Figure 11. UVLO, EN Current vs Temperature Figure 12. OVP Threshold (OVPTH), Hysteresis (OVPHYS)

vs Temperature

Figure 13. VGS Comparator Threshold Voltage (VGATE-TH)

vs Temperature Figure 14. VDS Comparator Offset Voltage (VOFFSET)

vs Temperature

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Typical Characteristics (continued)

Figure 15. GATE Current (IGATE) vs Temperature Figure 16. GATE Output Voltage (VGATE) vs Temperature

Figure 17. Gate Pull-Down Current - Fault (IGATE-FLT)

vs Temperature Figure 18. VIN Pin Current (IEN) vs EN Voltage

Figure 19. nPGD Low Voltage (PGDVOL) vs Temperature

VIN

SENSE

OUT

GATE

ISENSE

16 PA

OVPTH

2.0V

OVP

TIMER

nPGD

POREN

5.1V

POR

IGATE

24 PA

GND

16.8V

LM5060

VIN

UVLOTH

1.6V

UVLO

1.5V

VDS Fault

Comparator

Normal

OFF

IGATE-OFF

2.2 mA

nEN

Fault

PGOOD

VTMRH

2.0V

Q S

S Q

OUT+5V

VGATE-TH

Fault Latch

Reset Latch

nEN + POR

Bias Circuit

Enable

Fault

OFF

One

shot 5 PA6 PA

6 PA: Start-Up Fault Timer

11 PA: O-C (VDS) Fault Timer

UVLOBIAS

5.5 PA

ENBIAS

6 PAVTMRL

0.3V

500:

1 k:

IOUT-EN

8 PA

IGATE-FLT

80 mA

Charge

Pump

VGS Status

Comparator

ITIMERR

6 mA

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7 Detailed Description

7.1 Overview

The LM5060 high-side protection controller features programmable current limit, turn on voltage, fault timer, and

overvoltage protection. It also has an enable input and POWER GOOD output.

7.2 Functional Block Diagram

VIN VOUT

STATUS

UVLO

OVP TIMER

GND

OUT

SENSE GATE

VIN

LM5060

R10

R11

GND GND

nPGD

High = Fault, Low= OK

High = On, Low= Off

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7.3 Feature Description

The LM5060 is designed to drive an external high-side N-channel MOSFET. Over-Current protection is

implemented by sensing the voltage drop across the MOSFET. When an adjustable voltage drop threshold is

exceeded, and an adjustable time period has elapsed, the MOSFET is disabled. OVP and UVLO monitoring of

the input line is also provided. A low state on the enable pin will turn off the N-channel MOSFET and switch the

LM5060 into a very low quiescent current off state. An active low POWER GOOD output pin is provided to report

the status of the N-channel MOSFET. The waiting time before the MOSFET is turned off after a fault condition is

detected can be adjusted with an external timer capacitor. Since the LM5060 uses a constant current source to

charge the gate of the external N-channel MOSFET, the output voltage rise time can be adjusted by adding

external gate capacitance. This is useful when starting up into large capacitive loads.

7.4 Device Functional Modes

7.4.1 Power-Up Sequence

The basic application circuit is shown in Figure 20 and a normal start-up sequence is shown in Figure 21. Start-

up of the LM5060 is initiated when the EN pin is above the (ENTHH) threshold (2.0 V). At start-up, the timer

capacitor is charged with a 6-µA (typical) current source while the gate of the external N-channel MOSFET is

charged through the GATE pin by a 24-µA (typical) current source.

When the gate-to-source voltage (VGS) reaches the VGATE-TH threshold (typically 5 V) the VGS sequence ends, the

timer capacitor is quickly discharged to 0.3 V, and the 5-µA current source is enabled.

The timer capacitor will charge until either the VDS Comparator indicates that the drain-to-source voltage (VDS)

has been reduced to a nominal value (i.e. no fault) or the voltage on the timer capacitor has reached the VTMRH

threshold (i.e. fault). The VDS Comparator monitors the voltage difference between the SENSE pin and the OUT

pin. The SENSE pin voltage is user programmed to be lower than the input supply voltage by selecting a suitable

sense resistor value. When the OUT pin voltage exceeds the voltage at the SENSE pin, the nPGD pin is

asserted low (i.e. no fault) and the timer capacitor is discharged.

Figure 20. Basic Application Circuit

7.4.2 Status Conditions

Output responses of the LM5060 to various input conditions is shown in Table 1. The input parameters include

Enable (EN), UVLO, OVP, input voltage (VIN), Start-Up Fault (VGS) and Run Fault (VDS) conditions. The output

responses are the VIN pin current consumption, the GATE charge current, the TIMER capacitor charge (or

discharge) current, the GATE discharge current if the timer capacitor voltage has reached the VTMRH threshold

(typically 2 V), as well as the status of nPGD.

VGS Status

nPGD

VTIMER 6 PA

VGS

VGATE-TH

transition region

VGS > 5 VVGS < 5 V

OFF ON

VTMRH

VTMRL

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Device Functional Modes (continued)

(1) The 2.2 mA sink current is valid for with the VIN pin ≥5.1 V. When the VIN pin < 5.1 V the sink current is lower. See ‘GATE Pin Off

Current vs. VIN’ plot in Typical Characteristics.

Figure 21. Voltages During Normal Start Up Sequence

Table 1. Overview of Operating Conditions

INPUTS OUTPUTS

STATUS

EN UVLO OVP

(typ) VIN

(typ) SENSE-OUT GATE

-OUT

VIN

Current

(typ)

GATE Current

(typ) TIMER GATE after

TIMER > 2 V nPGD

L L – >5.10 V – – 0.009 mA 2.2 mA sink Low – – Disabled

L H – >5.10 V – – 0.009 mA 2.2 mA sink Low – – Disabled

H L <2 V >5.10 V SENSE>OUT – 0.56 mA 2.2 mA sink Low – HStandby

SENSE<OUT L

H L >2 V >5.10 V SENSE>OUT – 0.56 mA 80 mA sink Low – HStandby

SENSE<OUT L

H H <2 V >5.10 V SENSE>OUT <5 V 1.4 mA 24-µA source 6-µA source 80 mA sink H Enabled

SENSE<OUT Low – L

H H <2 V >5.10 V SENSE>OUT >5 V 1.4 mA 24-µA source 11-µA

source 80 mA sink H Enabled

SENSE<OUT Low – L

H H >2 V >5.10 V SENSE>OUT – 1.4 mA 80 mA sink Low – HOver-

voltage

SENSE<OUT L

H H <2 V <5.10 V – – 1.4 mA 2.2 mA sink

(see (1))Low – H Power on

reset

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8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

8.1.1 Gate Control

A charge pump provides bias voltage above the input and output voltage to enhance the N-channel MOSFET

gate. When the system voltage is initially applied and both EN and UVLO are above their respective thresholds,

the GATE pin is charged by the 24-µA (typical) current source. During normal operating conditions, the GATE pin

voltage is clamped to approximately 16.8 V above the OUT pin (i.e. VGS) by an internal zener.

When either the UVLO input or the EN input is low, or when VIN is below the Power-On Reset voltage of 5.10 V

(typical), the GATE pin is discharged with a 2.2 mA (typical) current sink.

When the timer capacitor is charged up to the VTMRH threshold (typically 2 V) a fault condition is indicated and

the gate of the external N-Channel MOSFET is discharged at a 80 mA (typical) rate. Additionally, when the OVP

pin voltage is higher than the OVPTH threshold (typically 2 V) a fault is indicated and the gate of the external N-

Channel MOSFET is discharged at the same 80 mA (typical) rate.

8.1.2 Fault Timer

An external capacitor connected from the TIMER pin to the GND pin sets the fault detection delay time. If the

voltage on the TIMER capacitor reaches the VTMRH threshold (2 V typical) a fault condition is indicated. The

LM5060 will latch off the MOSFET by discharging the GATE pin at a 80 mA (typical) rate, and will remain latched

off until either the EN pin, the UVLO pin, or the VIN pin is toggled low and then high.

There are three relevant components to the TIMER pin’s function:

1. A constant 6-µA (typical) current source driving the TIMER pin. This current source is active when EN,

UVLO, and VIN are all high.

2. A second current source (5 µA typical) is activated, for a total charge current of 11 µA (typical), only when

the VGS sequence has completed successfully.

3. A pull-down current sink for the TIMER pin which resets the timer by discharging the timer capacitor. If EN,

UVLO or VIN is low, or when OVP is high, the timer capacitor is discharged.

a. When the VDS Fault Comparator detects a fault, (SENSE pin voltage higher than OUT pin voltage) the

timer capacitor pull down is disabled and the timer capacitor is allowed to charge at the 11-µA (typical)

rate.

During Start-Up, the timer behaves as follows:

After applying sufficient system voltage and enabling the LM5060 by pulling the EN and UVLO pins high, the

timer capacitor will be charged with a 6-µA (typical) current source. The timer capacitor is discharged when the

voltage difference between the GATE pin and the OUT pin (i.e. VGS of the external N-Channel MOSFET)

reaches the VGATE-TH threshold (typically 5 V). After discharging, the timer capacitor is charged with 11 µA until

either the VTMRH threshold (typically 2 V) is reached, or the sensed VDS voltage falls below the threshold of the

VDS Fault Comparator, indicating the output voltage has reached the desired steady state level. The timer

capacitor voltage waveforms are illustrated in Figure 21,Figure 22, and Figure 23.

A timer capacitor is always necessary to allow some finite amount of time for the gate to charge and the output

voltage to rise during startup. If an adequate timer capacitor value is not used, then the 6 µA of charge current

would cause the TIMER pin voltage to reach the VTMRH fault threshold (typically 2 V) prematurely and the

LM5060 will latch off since a fault condition would have been indicated.

VGS Status

nPGD

VTIMER Fault Latch

VGS

6 PA

VTRMRH

GATE pin will be

discharged to GND

at 80 mA rate

VGATE-TH

OFF ON

Fault

VTRMRL

VGS < 5V

LM5060

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Application Information (continued)

Although not recommended, the timer function can be disabled by connecting the TIMER pin directly to GND.

With this condition the TIMER pin voltage will never reach the VTMRH fault threshold (2 V typical). The end result

is that the fault latch-off protection is completely disabled, while the nPGD pin will continue to reflect the VDS

Fault Comparator output.

8.1.3 VGS Considerations

The VGS Status Comparator accomplishes two purposes:

1. As the gate of the external MOSFET is charged, the VGS voltage transitions from cut-off, through an active

region, and into the ohmic region. The LM5060 provides two fault timer modes to monitor these transitions.

The TIMER pin capacitor is initially charged with a constant 6 µA (typical) until either the MOSFET VGS

reaches the VGATE–TH threshold (typically 5 V) indicating that the MOSFET channel is at least somewhat

enhanced, or the voltage on the TIMER pin reaches the VTMRH threshold (typically 2 V) indicating a fault

condition. If the MOSFET VGS reaches 5-V threshold before the TIMER pin reaches the typical 2 V timer fault

threshold, the timer capacitor is then discharged to 300 mV, and then begins charging with 11-µA current

source while the MOSFET transitions through the active region. The lower timer capacitor charge current

during the initial start-up sequence allows more time before a fault is indicated. The turn-on time of the

MOSFET will vary with input voltage, load capacitance, load resistance, as well as the MOSFET

characteristics.

2. Figure 22 shows a start-up waveform with excessive gate leakage. The initial charge current on the timer

capacitor is 6 µA (typical), while the simultaneous charge current to the gate is 24 µA (typical). Due to

excessive gate leakage, the 24 µA is not able to charge the gate to the required typical 5 V VGS threshold

and the VDS Fault Comparator will indicate a fault when the timer capacitor is charged to the VTMRH fault

threshold. When the timer capacitor voltage reaches theVTMRH fault threshold (typically 2 V) the MOSFET

gate is discharged at an 80 mA (typical) rate.

Figure 22. Voltages During Startup With VGS Gate Leakage Condition

8.1.4 VDS Fault Condition

The LM5060 includes a VDS Fault Comparator that senses the voltage difference between the SENSE pin and

the OUT pin. If the voltage at the OUT pin falls lower than the voltage at the SENSE pin, the VDS Fault

Comparator will trip and switch the nPGD pin to a high impedance state. It will also initiate charging of the

capacitor on the TIMER pin with a 6-µA (typical) current source if VGS is less than than 5-V, or a 11-µA (typical)

current source if VGS is higher than 5 V. If the voltage on the TIMER pin reaches the typical 2 V fault threshold,

the gate of the N-Channel MOSFET is pulled low with a 80 mA (typical) sink current. Figure 23 illustrates a VDS

fault condition during start-up. The nPGD pin never switches low because the VDS fault comparator detects

excessive VDS voltage throughout the entire sequence.

VGS Status

nPGD

VTIMER

6 PA

11 PA

Fault Latch

VGS

VGATE-TH

transition region

VTMRH

GATE pin will be

discharged to GND

at 80 mA rate

VGS = 5V

OFF ON

VGS < 5V VGS > 5V

VTMRL

Fault

LM5060

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Application Information (continued)

8.1.5 Overcurrent Fault

The VDS Fault Comparator can be used to implement an Over-Current shutdown function. The VDS Fault

Comparator monitors the voltage difference between the SENSE pin and the OUT pin. This is, essentially, the

same voltage that is across the N-Channel MOSFET RDS(ON) less the threshold voltage that is set by the series

resistor on the SENSE pin. The value of capacitor on the TIMER pin, the capacitor charge current (ITIMERH,11μA

typical), along with the TIMER pin fault threshold (VTMRH) will determine the how long the N-Channel MOSFET

will be allowed to conduct excessive current before the MOSFET is turned-off. When this delay time expires, the

gate is discharged at a 80 mA rate.

The LM5060 is intended for applications where precise current sensing is not required, but some level of fault

protection is needed. Examples are applications where inductance or impedance in the power path limits the

current rise in a short circuit condition.

The Safe Operating Area (SOA) of the external N-Channel MOSFET should be carefully considered to ensure

the peak drain-to-source current and the duration of the fault delay time is within the SOA rating of the MOSFET.

Also note that the RDS(ON) variations of the external N-Channel MOSFET will affect the accuracy of the Over-

Current detection.

8.1.6 Restart After Overcurrent Fault Event

When a VDS fault condition has occurred and the TIMER pin voltage has reached 2 V, the LM5060 latches off the

external MOSFET. In order to initiate a restart, either the EN pin, the VINpin, or the UVLO pin must be toggled

low and then high.

Figure 23. Voltages During Startup with VDS Fault Condition

8.1.7 Enable

The LM5060 Enable pin (EN) allows for remote On/Off control. The Enable pin on/off thresholds are CMOS

compatible. The external N-Channel MOSFET can be remotely switched Off by forcing the EN pin below the

lower input threshold, ENTHL (800 mV). The external N-Channel MOSFET can be remotely switched On by

forcing the EN pin above the upper input threshold, ENTHH (2.00 V). Figure 24 shows the threshold levels of the

Enable pin.

When the EN pin is less than 0.5 V (typical) the LM5060 enters a low current (disabled) state. The current

consumption of the VIN pin in this condition is 9 µA (typical).

180 mV (hysterisis)

UVLO

up to 65V

1.6V (UVLOTH)

200 mV (hysterisis)

OFF

up to 65V

1.5V (typical)

0.5V (disabled)

0.8V (ENTHL)

2.0V (ENTHH)

disabled

LM5060

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Application Information (continued)

Figure 24. Enable Function Threshold Levels

8.1.8 UVLO

The UVLO function will turn off the external N-Channel MOSFET with a 2.2 mA (typical) current sink at the GATE

pin. Figure 25 shows the threshold levels of the UVLO input. A resistor divider as shown in Figure 20 with R10

and R11 sets the voltage at which the UVLO function engages. The UVLO pin may also be used as a second

enable pin for applications requiring a redundant, or secondary, shut-down control. Unlike the EN pin function,

the UVLO function does not switch the LM5060 to the low current (disabled) state.

If the UVLO function is not needed, the UVLO pin should be connected to the VIN pin. The UVLO pin should not

be left floating as the internal pull-down will keep the UVLO active.

In addition to the programmable UVLO function, an internal Power-On-Reset (POR) monitors the voltage at the

VIN pin and turns the MOSFET Off when VIN falls below typically 5.10 V.

Figure 25. UVLO Threshold Levels

8.1.9 OVP

The OVP function will turn off the external N-Channel MOSFET if the OVP pin voltage is higher than the OVPTH

threshold (typically 2 V). A resistor divider made up with R8 and R9, shown in Figure 20, sets the OVP threshold.

An internal 9.6-µs timer filters the output of the over-voltage comparator to prevent noise from triggering an OVP

event. An OVP event lasting longer than typically 9.6 µs will cause the GATE pin to be discharged with an 80 mA

current sink and will cause the capacitor on the TIMER pin to be discharged.

If the OVP function is not needed, the OVP pin should be connected to GND. The OVP pin should not be left

floating.

INPUT OUTPUT

STATUS

4 UVLO

3 OVP TIMER 7

GND 6

5 EN

OUT

SENSE

GATE

2 VIN

LM5060

51V

22 µF

200 k

38.3 k

14.0 k

9.09 k

0.0

0.1 µF

100 k

22 µF

0.1 µF

GND GND

8 nPGD

High = Fault, Low= OK

High = On, Low= Off

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

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Application Information (continued)

8.1.10 Restart After OVP Event

After the OVP function has been activated and the gate of the external N-Channel MOSFET has been pulled low,

the OUT pin is likely to be low as well. However, an OVP condition will not cause the VDS Fault Comparator to

latch off of the LM5060 because the capacitor on the TIMER pin is also discharged during an OVP event. After

the OVP pin falls below the lower threshold (typically 1.76 V), the LM5060 will re-start as described in the normal

start-up sequence and shown in Figure 21. The EN, VIN, or UVLO pins do not need to be toggled low to high to

re-enable the MOSFET after an OVP event.

8.1.11 nPGD Pin

The nPGD pin is an open drain connection that indicates when a VDS fault condition has occurred. If the SENSE

pin voltage is higher than the OUT pin voltage the state of the nPGD pin will be high impedance. In the typical

application, as shown in Figure 20, the voltage at the nPGD pin will be high during any VDS fault condition. The

nPGD state is independent of the fault timer function. The resistance R4 should be selected large enough to

safely limit the current into the nPGD pin. Limiting the nPGD low state current below 5 mA is recommended.

8.2 Typical Applications

Three application examples are provided. Example Number 1: LM5060EVAL Design illustrates the process for

the LM5060EVAL in Related Documentation.Example Number 2: Reverse Polarity Protection With Diodes and

Example Number 3: Reverse Polarity Protection With Resistor illustrate two other applications that provide

additional protection features.

8.2.1 Example Number 1: LM5060EVAL Design

Figure 26 shows the schematic for the LM5060EVAL in Related Documentation. Design example number 1

illustrates the basic design procedure used for the evaluation module.

Figure 26. SNVA413 Schematic Diagram

8.2.1.1 Design Requirements

Example number 1 design requirements are shown in Table 2.

OUTSENSE GATE

VIN

LM5060

VIN VOUT

IDSTH = VDSTH

RDS(ON)

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Table 2. Example Number 1 Circuit Specifications

DESIGN PARAMETER EXAMPLE VALUE

Maximum input voltage (OVP) 37 V

Minimum input voltage (UVLO) 9 V

Output current range 0 A to 5.0 A

Ambient temperature range 0°C to 50°C

8.2.1.2 Detailed Design Procedure

8.2.1.2.1 VDS Fault Detection and Selecting Sense Pin Resistor RS

The LM5060 monitors the VDS voltage of the external N-Channel MOSFET. The drain to source voltage threshold

(VDSTH), which is set with the resistor RS, is shown in Figure 27;

VDSTH = (RSx ISENSE)-VOFFSET (1)

The MOSFET drain to source current threshold is:

where

• RDS(ON) is the resistive drop of the pass element Q1 in Figure 27

• VOFFSET is the offset voltage of the VDS comparator

• ISENSE (16 µA typical) is the threshold programming current (2)

Figure 27. Setting the VDS Threshold

8.2.1.2.2 Turn-On Time

To slow down the output rise time a capacitor from the GATE pin to GND may be added. The turn on time

depends on the threshold level of the N-Channel MOSFET, the gate capacitance of the MOSFET as well as the

optional capacitance from the GATE pin to GND. Figure 28 shows the slow down capacitor C1. Reducing the

turn-on time allows the MOSFET (Q1), to slowly charge a large load capacitance. Special care must be taken to

keep the MOSFET within its safe operating area. If the MOSFET turns on too slow, the peak power losses may

damage the device.

VDS Fault Delay = (VTIMERH - VTMRL) x CTIMER

ITIMERH

VDS Fault Delay = VTIMERH x CTIMER

ITIMERL

OUT

SENSE GATE

VIN

LM5060

VIN VOUT

LM5060

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Figure 28. Turn-On Time Extension

8.2.1.2.3 Fault Detection Delay Time

To allow the gate of the MOSFET adequate time to change, and to allow the MOSFET to conduct currents

beyond the protection threshold for a brief period of time, a fault delay timer function is provided. This feature is

important when drive loads which require a surge of current in excess of the normal ON current upon start up, or

at any point in time, such as lamps and motors. A single low leakage capacitor (CTIMER) connected from the

TIMER (pin 7), to ground sets the delay time interval for both the VGS status detection at start-up and for the

subsequent VDS Over-Current fault detection.

When the LM5060 is enabled under normal operating conditions the timer capacitor will begin charging at a 6 μA

(typical) rate while simultaneously charging the gate of the external MOSFET at a 24 μA (typical) rate. The gate-

to-source voltage (VGS) of the external MOSFET is expected to reach the 5-V (typical) threshold before the timer

capacitor has charged to the VTMRH threshold (2 V typical) in order to avoid being shutdown.

While VGS is less than the typical 5-V threshold (VGATE-TH), the VDS start-up fault delay time is calculated from:

where

• ITMRL is typically 6 μA and VTMRH is typically 2 V (3)

If the CTIMER value is 68 nF (0.068μF) the VGS start-up fault delay time would typically be:

VDS Fault Delay = ((2 V x 0.068 μF) / 6 μA) = 23 ms (4)

When the LM5060 has successfully completed the start-up sequence by reaching a VGS of 5 V within the fault

delay time set by the timer capacitor (CTIMER), the capacitor is quickly discharged to 300 mV (typical) and the

charge current is increased to 11 μA (typical) while the gate of the external MOSFET is continued to be charge at

a 24 μA (typical) rate. The external MOSFET may not be fully enhanced at this point in time and some additional

time may be needed to allow the gate-to-source voltage (VGS) to charge to a higher value. The drain-to-source

voltage (VDS) of the external MOSFET must fall below the VDSTH threshold set by RSand ISENSE before the timer

capacitor has charged to the VTMRH threshold (2 V typical) to avoid a fault.

When VGS is greater than the typical 5-V threshold (VGATE-TH), the VDS transition fault delay time is calculated

from:

where

• ITMRH is typically 11 μA

• VTMRH is typically 2 V

• VTMRL is typically 300 mV (5)

If the CTIMER value is 68 nF(0.068 μF) the VDS transition fault delay time would typically be:

VDS Fault Delay = (((2 V–0.3 V) x 0.068 μF) / 11 μA) = 10 ms (6)

VDS Fault Delay = VTIMERH x CTIMER

ITIMERH

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Should a subsequent load current surge trip the VDS Fault Comparator, the timer capacitor discharge transistor

turns OFF and the 11 μA (typical) current source begins linearly charging the timer capacitor. If the surge current,

with the detected excessive VDS voltage, lasts long enough for the timer capacitor to charge to the timing

comparator threshold (VTMRH) of typically 2 V, the LM5060 will immediately discharge the MOSFET gate and

latch the MOSFET off. The VDS fault delay time during an Over-Current event is calculated from:

where

• ITMRH is typically 11 μA

• VTMRH is typically 2 V (7)

If the CTIMER value is 68 nF(0.068 μF) the VDS Over-Current fault delay time would typically be:

VDS Fault Delay = ((2 V x 0.068 μF) / 11 μA) = 12 ms (8)

Since a single capacitor is used to set the delay time for multiple fault conditions, it is likely that some

compromise will need to be made between a desired delay time and a practical delay time.

8.2.1.2.4 MOSFET Selection

The external MOSFET (Q1) selection should be based on the following criteria:

• The BVDSS rating must be greater than the maximum system voltage (VIN), plus ringing and transients which

can occur at VIN when the circuit is powered on or off.

• The maximum transient current rating should be based on the maximum worst case VDS fault current level.

• MOSFETs with low threshold voltages offer the advantage that during turn on they are more likely to remain

within their safe operating area (SOA) because the MOSFET reaches the ohmic region sooner for a given

gate capacitance.

• The safe operating area (SOA) of the MOSFET device and the thermal properties should be considered

relative to the maximum power dissipation possible during startup or shutdown.

• RDS(ON) should be sufficiently low that the power dissipation at maximum load current ((IL(MAX))2x RDS(ON))

does not increase the junction temperature above the manufacturer’s recommendation.

• If the device chosen for Q1 has a maximum VGS rating less than 16 V, an external zener diode must be

added from gate to source to limit the applied gate voltage. The external zener diode forward current rating

should be at least 80 mA to conduct the full gate pull-down current during fault conditions.

8.2.1.2.5 Input and Output Capacitors

Input and output capacitors are not necessary in all applications. Any current that the external MOSFET conducts

in the on-state will decrease very quickly as the MOSFET turns off. All trace inductances in the design including

wires and printed circuit board traces will cause inductive voltage kicks during the fast termination of a

conducting current. On the input side of the LM5060 circuit this inductive kick can cause large positive voltage

spikes, while on the output side, negative voltage spikes are generated. To limit such voltage spikes, local

capacitance or clamp circuits can be used. The necessary capacitor value depends on the steady state input

voltage level, the level of current running through the MOSFET, the inductance of circuit board traces as well as

the transition speed of the MOSFET.

Since the exact amount of trace inductance is hard to predict, careful evaluation of the circuit board is the best

method to optimize the input or output capacitance or clamp circuits.

8.2.1.2.6 UVLO, OVP

The UVLO and OVP thresholds are programmed to enable the external MOSFET (Q1) when the input supply

voltage is within the desired operating range. If the supply voltage is low enough that the voltage at the UVLO pin

is below the UVLO threshold, Q1 is switched off by a 2.2 mA (typical) current sink at the GATE pin, denying

power to the load. The UVLO threshold has approximately 180 mV of hysteresis.

If the supply voltage is high enough that the voltage at the OVP pin is above the OVP threshold, the GATE pin is

pulled low with a 80 mA current sink. Hysteresis is provided for each threshold. The OVP threshold has

approximately 240 mV of hysteresis.

Option A: The configuration shown in Figure 29 requires three resistors (R1, R2, and R3) to set the thresholds.

VINMAX = R1 x

OVPTH

R3 + UVLOBIAS + R2 x + OVPTH

OVPTH

VINMIN =

UVLOTH

R2 + R3 + UVLOBIAS x R1 + UVLOTH

R2 = R3 x VINMAX

OVPTH

UVLOBIAS x R1 x R3

OVPTH

- R3 - R1 -

R3 =

UVLOTH x R1

VINMIN - UVLOTH - (UVLOBIAS x R1) + R1

VINMAX

OVPTH

UVLOBIAS x R1

OVPTH

OVP

VIN

LM5060

OVPTH

2.00V

UVLO

UVLOTH

1.60V

UVLOBIAS

5.5 PA

VIN

LM5060

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Figure 29. UVLO and OVP Thresholds Set by R1, R2 and R3

The procedure to calculate the resistor values is as follows:

1. Select R1 based on current consumption allowed in the resistor divider, including UVLOBIAS, and

consideration of noise sensitivity. A value less than 100 kΩis recommended, with lower values providing

improved immunity to variations in ULVOBIAS.

2. Calculate R3 with the following formula:

(9)

3. Calculate R2 with the following formula:

(10)

VINMIN is the minimum and VINMAX is the maximum input voltage of the design specification. All other variables

can be found in the Electrical Characteristics table of this document. To calculate the UVLO lower threshold

including its hysteresis for falling VIN, use (UVLOTH-UVLOHYS) instead of UVLOTH in the formulas above. To

calculate the OVP lower threshold including hysteresis for falling VIN, use (OVPTH-OVPHYS) instead of OVPTH.

With three given resistors R1, R2, and R3, the thresholds can be calculated with the formulas below:

(11)

Also in these two formulas, the respective lower threshold value including the hysteresis is calculated by using

(UVLOTH-UVLOHYS) instead of UVLOTH, and (OVPTH-OVPHYS) instead of OVPTH. The worst case thresholds,

over the operating temperature range, can be calculated using the respective min and max values in bold font in

the Electrical Characteristics.

Option B: UVLO and OVP can be independently adjusted using two resistor dividers as shown in Figure 30.

VINMAX = OVPTH + R8 x OVPTH

VINMIN = UVLOTH + UVLOTH

R11

R10 x UVLOBIAS +

R8 = R9 x

VINMAX - OVPTH

OVPTH

R10 =

VINMIN - UVLOTH

UVLOTH

R11

UVLOBIAS +

OVP

VIN

LM5060

R10

OVPTH

2.00V

UVLO

UVLOTH

1.60V

UVLOBIAS

5.5 PA

VIN

R11

LM5060

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Figure 30. Programming the Thresholds with Resistors R8-R11

Choose the upper UVLO thresholds to ensure operation down to the lowest required operating input voltage

(VINMIN). Select R11 based on resistive divider current consumption and noise sensitivity. A value less than 100

kΩis recommended, with lower values providing improved immunity to variations in ULVOBIAS.

(12)

To calculate the UVLO low threshold including its hysteresis, use (UVLOTH-UVLOHYS) instead of UVLOTH in the

formula above. Choose the lower OVP threshold to ensure operation up to the highest VIN voltage required

(VINMAX). Select R9 based on resistive divider current consumption A value less than 100 kΩis recommended.

(13)

To calculate the OVP low threshold including hysteresis, use (OVPTH-OVPHYS) instead of OVPTH. Where the R9-

R11 resistor values are known, the threshold voltages are calculated from the following:

(14)

Also in these two formulas, the respective low value including the threshold hysteresis is calculated by using

(UVLOTH-UVLOHYS) instead of UVLOTH and (OVPTH-OVPHYS) instead of OVPTH. The worst case thresholds, over

the operating temperature range, can be calculated using the respective minimum and maximum values in bold

font in the Electrical Characteristics.

Option C: The OVP function can be disabled by grounding the OVP pin. The UVLO thresholds are set as

described in Figure 30.

8.2.1.2.7 POWER GOOD Indicator

A resistor between a supply voltage and the nPGD pin limits the current into the nPGD pin in a logic low

condition. A nPGD pin sink current in the range of 1 mA to 5 mA is recommended. The example in Figure 31

connects the nPGD pull-up resistor R4 to the VIN pin. Any positive supply voltage less than 65 V may be used

instead of VIN.

GND

OUT

SENSE

GATE

Fault

OFF

LM5060

CLRL

VIN VOUT

IGATE-FLT

80 mA

Status

nPGD

LM5060

GND

VDS fault signal

VIN

LM5060

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Figure 31. Circuitry at the nPGD Pin

8.2.1.2.8 Input Bypass Capacitor

Some input capacitance from the VIN pin to the GND pin may be necessary to filter noise and voltage spikes

from the VIN rail. If the current through Q1 in Figure 20 is very large a sudden shutdown of Q1 will cause an

inductive kick across the line input and pc board trace inductance which could damage the LM5060. In order to

protect the VIN pin as well as SENSE, OVP, UVLO, and nPGD pins from harm, a larger bulk capacitor from VIN

to GND may be needed to reduce the amplitude of the voltage spikes. Protection diodes or surge suppressors

may also be used to limit the exposure of the LM5060 pins to voltages below their maximum operating ratings.

8.2.1.2.9 Large Load Capacitance

Figure 32 shows an application with a large load capacitance CL. Assume a worst case turn off scenario where

Vin remains at the same voltage as CLand RLis a high impedance. The body diode of Q1 will not conduct any

current and all the charge on CLis dissipated through the LM5060 internal circuitry. The dotted line in Figure 32

shows the path of this current flow. Initially the power dissipated by the LM5060 is calculated with the formula:

P = IGATE-FLT x VOUT

where

• IGATE-FLT is the sink current of the LM5060 gate control (15)

In applications with a high input voltage and very large output capacitance, the discharge current can be limited

by an additional discharge resistor ROin series with the OUT pin as shown in Figure 33. This resistor will

influence the current limit threshold, so the value of RSwill need to be readjusted.

Figure 32. Discharge Path of Possible Load Capacitor

In applications exposed to reverse polarity on the input and a large load capacitance on the output, a current

limiting resistor in series with the OUT pin is required to protect the LM5060 OUT pin from reverse currents

exceeding 25 mA. Figure 33 shows the resistor ROin the trace to the OUT pin.

GND

OUT

SENSE

GATE

Fault

OFF

LM5060

RSRO

CLRL

VOUT

VIN

IGATE-FLT

80 mA

LM5060

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Figure 33. Current Limiting Resistor ROfor Special Cases

If a ROresistor in the OUT path is used, the current sensing will become less accurate since ROhas some

variability as well as the current into the OUT pin. The OUT pin current is specified in the Electrical

Characteristics section as IOUT-EN.AROresistor design compromise for protection of the OUT pin and a

maintaining VDS sensing accuracy can be achieved. See the Reverse Polarity Protection With a Resistor section

for more details on how to calculate a reasonable ROvalue.

8.2.1.3 Application Curves

Figure 34. Start-Up Waveform Figure 35. Start-Up Waveform

Figure 36. OVP Behavior Figure 37. RSvs IDSTH for RDS(ON) = 25 mΩ

LM5060

GATE

OUT

VIN

TIMER

GND

SENSE

VIN

OVP

UVLO

Q1 Q2

GND GND

VOUT

nPGD

36V

12 k:

10 k:

2 k:

68 nF

100 nF

75A, 40V 75A, 40V

0.6A, 40V

10 k:

49.9 k:

5.62 k:

5.11 k:

Status

Enable

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

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Figure 38. Fault Behavior

8.2.2 Example Number 2: Reverse Polarity Protection With Diodes

Figure 39. Application with Reverse Polarity Protection with Diodes for OUT Pin Protection

Figure 39 shows the LM5060 in an automotive application with reverse polarity protection. The second N-channel

MOSFET Q2 is used to prevent the body diode of Q1 from conducting in a reverse VIN polarity situation. The

zener diode D3 is used to limit VIN voltage transients which will occur when Q1 and Q2 are shut off quickly. In

some applications the inductive kick is handled by input capacitors and D3 can be omitted. In reverse polarity

protected applications, the input capacitors will see the reverse voltage. To avoid stressing input capacitors with

reverse polarity, a transorb circuit implemented with D3 and D2 may be used. Diode D1 in Figure 39 protects the

VIN pin in the event of reverse polarity. The resistor R1 protects the GATE pin from reverse currents exceeding

25 mA in the reverse polarity situation. This GATE resistor would slow down the shutdown of Q1 and Q2

dramatically. To prevent a slow turn off in fault conditions, D5 is added to bypass the current limiting resistor R1.

When Q1 and Q2 are turned on, R1 does not cause any delay because the GATE pin is driven with a 24-µA

current source. D6, Q3 and R2 protect Q2 from VGS damage in the event of reverse input polarity. Diodes D5

and D7 are only necessary if the output load is highly capacitive. Such a capacitive load in combination with a

high reverse polarity input voltage condition can exceed the power rating of the internal zener diode between

OUT pin and GATE pin as well as the internal diode between the OUT pin and SENSE pin. External diodes D5

and D7 should be used in reverse polarity protected applications with large capacitive loads.

LM5060

GATE

OUT

VIN

TIMER

GND

SENSE

VIN

OVP

UVLO

Q1 Q2

GND GND

VOUT

nPGD

36V

49.9 k:

5.62 k:

5.11 k:

100 nF

68 nF

10 k:

2 k:

10 k:

12 k:

75A, 40V 75A, 40V

0.6A, 40V

Enable

Status

SSD D

LM5060

www.ti.com

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

Product Folder Links: LM5060

8.2.2.1 Design Requirements

Example number 2 design requirements are shown in Table 3.

Table 3. Example Number 2 Circuit Specifications

DESIGN PARAMETER EXAMPLE VALUE

Operating voltage range 9 V to 24 V

Current max 30 A

OVP setting 27 V typical

UVLO setting 9 V typical

8.2.2.2 Application Curve

Figure 40. Reverse Input Voltage Polarity

8.2.3 Example Number 3: Reverse Polarity Protection With Resistor

Figure 41. Application with Reverse Polarity Protection with a Resistor for OUT Pin Protection

RS(MIN) = VIN

25 mA

RO(MIN) = VOUT - (4 mA x 1.5 k:)

4 mA

SENSE OUT

ISENSE

16 PA

LM5060

VDS Fault

Comparator

500:1 k:

IOUT-EN

8 PA

VOUT

VIN

RSRO

4 mA

max

25 mA

max

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

www.ti.com

Product Folder Links: LM5060

Figure 41 shows an example circuit which is protected against reverse polarity using resistor R8 instead of the

diodes D5 and D7 of Figure 39.

8.2.3.1 Design Requirements

Example number 3 design requirements are shown in Table 4.

Table 4. Example Number 3 Circuit Specifications

DESIGN PARAMETER EXAMPLE VALUE

Operating voltage range 9 V to 24 V

Current max 30 A

OVP setting 27 V typical

UVLO setting 9 V typical

8.2.3.2 Detailed Design Procedure

8.2.3.2.1 Reverse Polarity Protection With a Resistor

An alternative to using external diodes to protect the LM5060 OUT pin in the reverse polarity input condition is a

resistor in series with the OUT pin. Adding an OUT pin resistor may require modification of the resistor in series

with the SENSE pin. A resistor in series with the OUT pin will limit the current through the internal zener diode

between OUT and GATE as well as through the diode between OUT and SENSE. The value of these resistors

should be calculated to limit the current through the diode across the input terminals of the VDS fault comparator

to be no more than 4 mA. Figure 42 shows the internal circuitry relevant for calculating the values of the resistor

ROin the OUT path to limit the current into the OUT pin to 4 mA.

Figure 42. Current Limiting Resistor for Negative SENSE Condition

When calculating the minimum ROresistor required to limit the current into the OUT pin, the internal current

sources of 8 µA and 16 µA may be neglected. The following formulas can be used to calculate the resistor value

RO(MIN) which is necessary to keep the IOcurrent to less than 4 mA.

Case A is for situations where VOUT > VIN and reverse polarity situation is present (see Figure 42). VIN is

negative, but the voltage at the SENSE pin can roughly be assumed to be 0.0 V due to the internal diode from

the SENSE pin to GND.

(16)

In this case, VIN also has to be limited to a negative voltage so that reverse current through the SENSE pin does

not exceed 25 mA.

(17)

RS =

VDSTH

ISENSE

RO x IOUT-EN

ISENSE

VOFFSET

ISENSE

RO(MIN) = VOUT

25 mA

SENSE OUT

ISENSE

16 PA

LM5060

VDS Fault

Comparator

500:1 k:

IOUT-EN

8 PA

VOUT

VIN

RSRO

25 mA

max

RO(MIN) = - (RS + 1.5 k:

4 mA

(VOUT - VIN)

SENSE OUT

ISENSE

16 PA

LM5060

VDS Fault

Comparator

500:1 k:

IOUT-EN

8 PA

VOUT

VIN

RSRO

4 mA

max

LM5060

www.ti.com

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

Product Folder Links: LM5060

Figure 43. Current Limiting Resistor in the OUT Path for OUT > SENSE Condition

Case B is for situations where VOUT > VIN and there is no reverse polarity situation present (see Figure 43). VIN is

positive and VOUT is also positive, but VOUT is higher than VIN:

(18)

In this case the voltage on the SENSE pin should not exceed 65 V.

Case C is for situations where VOUT < VIN and both VIN and VOUT are positive as well. In such cases there is no

risk of excessive OUT pin current. No current limiting resistors are necessary. Both the SENSE and OUT

voltages should be limited to less than 65 V.

Figure 44. Current Limiting Resistor for Negative OUT Conditions

Case D for situations where VOUT < VIN, while VOUT is negative and VIN is positive (see Figure 44). ROneeds to

be selected to protect the OUT pin from currents exceeding 25 mA.

(19)

8.2.3.2.2 Fault Detection With RSand RO

Figure 41 shows an example circuit where the OUT pin is protected against a reverse battery situation with a

current limiting resistor RO. When using resistor ROin the OUT pin path, the resistor RShas to be selected taking

the ROresistor into account. The LM5060 monitors the VDS voltage of an external N-Channel MOSFET. The VDS

fault detection voltage is the drain to source voltage threshold (VDSTH). The formula below calculates a proper RS

resistor value for a desired VDSTH taking into account the voltage drop across the ROresistor.

(20)

IDSTH = VDSTH

RDS(ON)

VDSTH = ISENSE x RO

IRATIO

RS -+ VOFFSET

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

www.ti.com

Product Folder Links: LM5060

VOFFSET is the offset voltage between the SENSE pin and the OUT pin, ISENSE is the threshold programming

current, and IOUT-EN is the OUT pin bias current. When RSand ROhave been selected, the following formula can

be used for VDSTH min and max calculations:

(21)

The MOSFET drain-to-source current threshold is:

where

• RDS(ON) is the on resistance of the pass element Q1 in Figure 20 (22)

8.2.3.3 Application Curves

Figure 45. Startup at No Load Figure 46. Shutdown

Figure 47. Overcurrent Shutdown with Gate Diode Figure 48. Reverse Input Voltage Polarity

9 Power Supply Recommendations

The recommended input power supple operating voltage range is 5.5 V to 65 V. The VIN source current rating of

the power supply should be adequate to keep the LM5060 in the normal operating range during all load and line

transients. Place a 10 nF or 100 nF ceramic capacitor close to the VIN pin.

VIA

Top Trace/Plane

Bottom Plane

POWER FLOW

5 6

LM5060

SENSE

VIN

OVP

UVLO

GATE

OUT

nPGD

TIMER

GND

LM5060

www.ti.com

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

Product Folder Links: LM5060

10 Layout

10.1 Layout Guidelines

The component placement and layout should generally follow the example provided in Figure 49. Power from

input source to load should flow in a manner similar to that shown in Figure 49 and heavy conductors for traces

bearing the load current should be used. Place the VIN bypass capacitor close to pin 2. Place the TIMER

capacitor close to pin 7.

10.2 Layout Example

Figure 49. LM5060 Recommended Layout

LM5060

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

www.ti.com

Product Folder Links: LM5060

10.3 Thermal Considerations

In normal operation the LM5060 dissipates very little power so that thermal design may not be very critical. The

power dissipation is typically the 2 mA input current times the input voltage. If the application is driving a large

capacitive load application, upon shutdown of the LM5060, the load capacitor may partially, or fully, discharge

back through the LM5060 circuitry if no other loads consume the energy of the pre-charged load capacitor. One

application example where energy is dissipated by the LM5060 is a motor drive application with a large capacitor

load. When the LM5060 is turned off, the motor might also turn off such that total residual energy in the load

capacitor is conducted through the OUT pin to ground. The power dissipated within the LM5060 is determined by

the discharge current of 80 mA and the voltage on the load capacitor.

LM5060

www.ti.com

SNVS628H –OCTOBER 2009–REVISED DECEMBER 2019

Product Folder Links: LM5060

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following:

• LM5060EVAL User Guide, SNVA413

11.2 Community Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead finish/

Ball material

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM5060MM/NOPB ACTIVE VSSOP DGS 10 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SXAB

LM5060MMX/NOPB ACTIVE VSSOP DGS 10 3500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SXAB

LM5060Q1MM/NOPB ACTIVE VSSOP DGS 10 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SZAB

LM5060Q1MMX/NOPB ACTIVE VSSOP DGS 10 3500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SZAB

LM5060QDGSRQ1 ACTIVE VSSOP DGS 10 3500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 1EQX

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 2

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LM5060, LM5060-Q1 :

•Catalog: LM5060

•Automotive: LM5060-Q1

NOTE: Qualified Version Definitions:

•Catalog - TI's standard catalog product

•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM5060MM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5060MMX/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5060Q1MM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5060Q1MMX/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5060QDGSRQ1 VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 25-Jan-2019

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM5060MM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0

LM5060MMX/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0

LM5060Q1MM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0

LM5060Q1MMX/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0

LM5060QDGSRQ1 VSSOP DGS 10 3500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 25-Jan-2019

Pack Materials-Page 2

www.ti.com

PACKAGE OUTLINE

TYP

5.05

4.75

1.1 MAX

8X 0.5

10X 0.27

0.17

0.15

0.05

TYP

0.23

0.13

0 - 8

0.25

GAGE PLANE

0.7

0.4

NOTE 3

3.1

2.9

NOTE 4

3.1

2.9

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.

5. Reference JEDEC registration MO-187, variation BA.

110

0.1 C A B

PIN 1 ID

AREA

SEATING PLANE

0.1 C

SEE DETAIL A

DETAIL A

TYPICAL

SCALE 3.200

www.ti.com

EXAMPLE BOARD LAYOUT

(4.4)

0.05 MAX

ALL AROUND 0.05 MIN

ALL AROUND

10X (1.45)

10X (0.3)

8X (0.5)

(R )

TYP

0.05

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

SYMM

LAND PATTERN EXAMPLE

SCALE:10X

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

www.ti.com

EXAMPLE STENCIL DESIGN

(4.4)

8X (0.5)

10X (0.3)

10X (1.45)

(R ) TYP0.05

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:10X

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