VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 1Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 110 A
VDRM/VRRM 400 V, 800 V, 1200 V
VTM 1.57 V
IGT 80 mA
TJ-40 °C to +140 °C
Package TO-94 (TO-209AC)
Circuit configuration Single SCR
TO-94 (TO-209AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
110 A
TC90 °C
IT(RMS) 172
A
ITSM
50 Hz 2080
60 Hz 2180
I2t50 Hz 21.7 kA2s
60 Hz 19.8
VDRM/VRRM 400 to 1200 V
tqTypical 110 μs
TJ-40 to +140 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-110RKI
VS-111RKI
40 400 500
2080 800 900
120 1200 1300
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 2Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 110 A
90 °C
Maximum RMS on-state current IT(RMS) DC at 83 °C case temperature 172
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
2080
t = 8.3 ms 2180
t = 10 ms 100 % VRRM
reapplied
1750
t = 8.3 ms 1830
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
21.7
kA2s
t = 8.3 ms 19.8
t = 10 ms 100 % VRRM
reapplied
15.3
t = 8.3 ms 14.0
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.82 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.02
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 2.16 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.70
Maximum on-state voltage VTM Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V
Maximum holding current IHTJ = 25 °C, anode supply 6 V resistive load 200 mA
Typical latching current IL400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 300 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1
μs
Typical turn-off time tqITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25 110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum rated VDRM/VRRM applied 20 mA
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 3Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 12 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3.0
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 10
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
180 -
mATJ = 25 °C 80 120
TJ = 140 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.5 -
VTJ = 25 °C 1.6 2
TJ = 140 °C 1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated VDRM anode to
cathode applied
6.0 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to +140 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to case RthJC DC operation 0.27 K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1
Mounting torque, ± 10 %
Non-lubricated threads 15.5
(137) N · m
(lbf · in)
Lubricated threads 14
(120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.043 0.031
TJ = TJ maximum K/W
120° 0.052 0.053
90° 0.066 0.071
60° 0.096 0.101
30° 0.167 0.169
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 4Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
8040 6020 100 120
0
140
130
120
110
100
90
80
94379_01
30° 60° 90°
120°
180°
Ø
Conduction angle
RthJC (DC) = 0.27 K/W
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
20 40 10060 14012080 160 1800
70
80
90
100
110
120
140
130
94379_02
30° 60°
DC
90°
120°
180°
Conduction period
Ø
RthJC (DC) = 0.27 K/W
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
40 80 100 120
060
20
160
140
120
100
80
60
40
20
0
94379_03a
RMS limit
180°
120°
90°
60°
30°
Ø
Conduction angle
TJ = 140 °C
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
20 6040 80 100 120 140
0
160
140
120
100
80
60
40
20
0
94379_03b
2 K/W
4 K/W
5 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
RthSA = 0.3 K/W - ΔR
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
20 40 8060 100 120 140
0
220
200
180
160
120
80
40
20
140
100
60
0
94379_04b
2 K/W
4 K/W
5 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
RthSA = 0.3 K/W - ΔR
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
60 140 180
0100 160
20 80 120
40
220
180
140
100
200
160
120
60
80
40
20
0
94379_04a
DC
180°
120°
90°
60°
30° RMS limit
TJ = 140 °C
Conduction period
Ø
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 5Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
800
1000
1200
1800
1600
1400
2000
94379_05
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 140 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 1010.01
500
1000
1500
2000
2500
94379_06
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 140 °C
No voltage reapplied
Rated VRRM reapplied
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
012345
1
100
10
10 000
1000
94379_07
TJ = 140 °C
TJ = 25 °C
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal
Impedance (K/W)
94379_08
Steady state value
RthJC = 0.27 K/W
(DC operation)
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com Vishay Semiconductors
Revision: 24-Jan-18 6Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
0.1
1
10
100
0.001
94379_09 Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r ≤ 0.5 μs, tp ≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r ≤ 1 μs, tp ≥ 6 μs(b)
(a)
TJ = 25 °C
TJ = 140 °C
TJ = 40 °C
VGD
IGD
(1) (2) (3) (4)
Frequency limited by PG(AV)
Device code
5 761 32 4
11VS- 0 RKI 120 M PbF
-I
T(AV)
rated average output current (rounded/10)
3
- Thyristor
4
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
5
6- None = stud base1/2"-20UNF-2A threads
M = stud base metric threads M12 x 1.75 E 6
2
-0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
1
- Vishay Semiconductors product
7- None = standard production
PbF = lead (Pb)-free
Document Number: 95363 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 25-Sep-08 1
TO-209AC (TO-94) for 110RKI and 111RKI Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Note
• For metric device: M12 x 1.75 contact factory
Fast-on terminals
C.S. 0.4 mm2
White shrink
Red shrink
Red cathode
Red silicon rubber
Ø 4.3 (0.17)
10 (0.39) MAX.
(0.0006 s.i.)
Ceramic housing
Ø 8.5 (0.33)
16.5 (0.65) MAX.
Ø 22.5 (0.88) MAX.
C.S. 16 mm2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
White gate
AMP. 280000-1
REF-250
20 (0.79) MIN.
24 (0.94)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
55 (2.16)
MIN.
215 ± 10
(8.46 ± 0.39)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
