STGWT30HP65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features TAB 3 2 1 TO-3P C(2, TAB) * Maximum junction temperature: TJ = 175 C * * * High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A * * * Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient * * Low thermal resistance Very fast soft recovery antiparallel diode G(1) Applications * E(3) Power factor corrector (PFC) NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWT30HP65FB Product summary Order code STGWT30HP65FB Marking GWT30HP65FB Package TO-3P Packing Tube DS11375 - Rev 3 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWT30HP65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 C 60 Continuous collector current at TC = 100 C 30 Pulsed collector current 120 Gate-emitter voltage 20 Transient gate-emitter voltage (tp 10 s) 30 Continuous forward current at TC = 25 C 5 Continuous forward current at TC = 100 C 5 IFP (3) Pulsed forward current 10 A PTOT Total power dissipation at TC = 25 C 260 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 VCES IC ICP (1) VGE IF (2) TJ Parameter A A V A C 1. Pulse width limited by maximum junction temperature. 2. Limited by wires. 3. Pulsed forward current. Table 2. Thermal data Symbol DS11375 - Rev 3 Parameter Value RthJC Thermal resistance junction-case IGBT 0.58 RthJC Thermal resistance junction-case diode 5 RthJA Thermal resistance junction-ambient 50 Unit C/W page 2/15 STGWT30HP65FB Electrical characteristics 2 Electrical characteristics TC = 25 C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.55 VGE = 15 V, IC = 30 A, TJ = 125 C 1.65 VGE = 15 V, IC = 30 A, TJ = 175 C 1.75 IF = 5 A 2.0 IF = 5 A, TJ = 125 C 1.85 IF = 5 A, TJ = 175 C 1.75 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2.0 V V 7 V VGE = 0 V, VCE = 650 V 25 A VCE = 0 V, VGE = 20 V 250 nA Unit Table 4. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 28. Gate charge test circuit) Min. Typ. Max. - 3659 - - 101 - - 76 - - 149 - - 25 - - 62 - Min. Typ. Max. Unit pF nC Table 5. IGBT switching characteristics (inductive load) Symbol td(off) Parameter Test conditions Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 146 - ns Current fall time RG = 10 - 23 - ns Eoff (1) Turn-off switching energy (see Figure 27. Test circuit for inductive load switching) - 293 - J td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V, - 158 - ns Current fall time RG = 10 , TJ = 175 C - 65 - ns Turn-off switching energy (see Figure 27. Test circuit for inductive load switching) - 572 - J tf tf Eoff 1. Including the tail of the collector current. DS11375 - Rev 3 page 3/15 STGWT30HP65FB Electrical characteristics Table 6. Diode switching characteristics (inductive load) Symbol DS11375 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit - 140 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 5 A, VR = 400 V, VGE = 15 V, - 21 - nC Irrm Reverse recovery current di/dt = 1000 A/s - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) - 430 - A/s Err Reverse recovery energy - 1.6 - J trr Reverse recovery time - 200 - ns Qrr Reverse recovery charge IF = 5 A, VR = 400 V, VGE = 15 V, - 47.3 - nC Irrm Reverse recovery current di/dt = 1000 A/s, TJ = 175 C - 9.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) - 428 - A/s Err Reverse recovery energy - 3.2 - J page 4/15 STGWT30HP65FB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics (TJ = 25 C) IC (A) VGE =15 V VGE =13 V 100 Figure 2. Output characteristics (TJ = 175 C) IC (A) VGE =15 V VGE =13 V 100 GIPG280120141156FSR VGE =11 V 80 GIPG280120141206FSR VGE =11 V 80 60 60 VGE =9 V VGE =9 V 40 40 20 20 0 0 1 2 3 4 VGE =7 V VCE (V) 5 Figure 3. Transfer characteristics IC (A) 100 GIPG280120141330FSR VCE = 6 V 0 0 VGE =7 V 1 2 3 4 5 VCE (V) Figure 4. Collector current vs case temperature GIPG280120141346FSR IC (A) 60 80 40 Tj = 175 C 60 Tj = 25 C 40 20 20 0 5 7 9 11 VGE (V) Figure 5. VCE(sat) vs junction temperature GIPG280120141440FSR VCE(sat) (V) VGE = 15 V 2.2 IC = 60 A 0 VGE 15V, TJ 175 C 0 150 GIPG280120141353FSR 100 50 1.4 IC = 15 A DS11375 - Rev 3 100 125 150 175 TC (C) 250 1.8 1.2 -50 75 Ptot (W) 200 IC = 30 A 50 Figure 6. Total power dissipation vs case temperature 2.0 1.6 25 0 50 100 150 TJ (C) VGE 15V, TJ 175 C 0 0 25 50 75 100 125 150 175 TC (C) page 5/15 STGWT30HP65FB Electrical characteristics (curves) Figure 7. Forward bias safe operating area GIPG280120141450FSR IC (A) Figure 8. Collector current vs switching frequency IC (A) GIPG280120141713FSR Vce(sat) limit 80 100 60 10 s 10 100 s 40 1 ms 1 10 1 TC = 100 C 20 (single pulse Tc = 25 C, TJ 175 C, VGE = 15 V) 0.1 TC = 80 C 100 VCE (V) Figure 9. Normalized VGE(th) vs junction temperature AM16060v1 V GE(th) (norm) VCE = VGE, IC = 1 mA Rectangular current shape (duty cycle = 0.5, VCC = 400 V, 0 RG = 10 , VGE = 0/15 V , Tj = 175 C 100 101 102 f (kHz) Figure 10. Normalized V(BR)CES vs junction temperature AM16059v1 V(BR)CES (norm) 1.1 IC = 2 mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 T J (C) Figure 11. Switching energy vs temperature E (J) GIPG280120141531FSRb VCC = 400 V, VGE = 15 V, Rg = 10 , IC = 30 A, EOFF 600 0.9 -50 0 50 100 T J (C) 150 Figure 12. Switching energy vs gate resistance E (J) 1020 GIPG280120141535FSRb VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 C EOFF 820 620 400 420 200 220 0 20 DS11375 - Rev 3 40 60 80 100 120 140 160 TJ (C) 20 3 10 17 24 31 38 45 RG () page 6/15 STGWT30HP65FB Electrical characteristics (curves) Figure 13. Switching energy vs collector current E (J) 1200 GIPG280120141605FSRb VCC = 400 V, VGE = 15 V Rg = 10 , TJ = 175 C Figure 14. Switching energy vs collector emitter voltage E (J) GIPG280120141609FSRb TJ = 175 C, VGE = 15 V Rg = 10 , IC = 30 A 800 1000 EOFF EOFF 600 800 600 400 400 200 200 0 0 20 40 Figure 15. Switching times vs collector current t (ns) 0 150 IC (A) 60 GIPG100720141533FSRb TJ = 175 C, VGE = 15 V, RG = 10 , VCC = 400 V 250 350 VCE (V) 450 Figure 16. Switching times vs gate resistance t (ns) GIPG100720141549FSRb TJ = 175 C, VGE = 15 V, IC = 30 A, VCC = 400 V tdoff tdoff 100 tf 100 10 tf 1 0 10 20 30 40 50 IC (A) 10 20 30 RG () 40 Figure 18. VCE(sat) vs collector current Figure 17. Capacitance variations C (pF) 10 0 GIPG090720141358FSR VCE(sat) (V) Cies GIPG280120141446FSR VGE = 15 V 2.4 2.2 1000 TJ = 175 C 2.0 1.8 100 1.6 Coes Cres 10 0.1 DS11375 - Rev 3 TJ = 25 C 1 10 100 VCE (V) TJ = -40 C 1.4 1.2 15 30 45 60 IC (A) page 7/15 STGWT30HP65FB Electrical characteristics (curves) Figure 19. Gate charge vs gate-emitter voltage VGE (V) 16 14 GIPG280120141455FSR VCC = 520 V, IC = 30 A IG = 1mA Figure 20. Diode VF vs forward current VF (V) 2.6 IGBT110120161316DVF T j = -40 C T j = 25 C 12 2.0 10 8 1.4 T j = 175 C 6 4 0.8 2 0 0 80 40 120 160 Qg (nC) Figure 21. Reverse recovery current vs diode current slope Irrm (A) 12 10 IGBT020820161120RRC VCC = 400 V VGE = 15 V, IF = 5 A TJ = 175 C 0.2 0 2 4 6 8 10 IF (A) Figure 22. Reverse recovery time vs diode current slope trr (ns) 350 IGBT120120160820RRT VCC = 400 V, VGE = 15 V, IF = 5 A, Tj = 175 C 300 8 250 6 200 4 150 2 0 0 300 600 900 1200 di/dt(A/s) Figure 23. Reverse recovery charge vs diode current slope IGBT020820161204RRQ rr 0.5 VCC=400 V, VGE=15 V IF = 5 A,TJ =175 C 100 0 300 600 900 1200 di/dt (A/s) Figure 24. Reverse recovery energy vs diode current slope rr 55 IGBT020820161239RRE VCC = 400 V,VGE = 15 V, IF = 5 A,TJ = 175 C 50 45 0.48 40 35 0.46 30 0.44 0 DS11375 - Rev 3 300 600 900 1200 di/dt(A/s) 25 0 300 600 900 1200 di/dt(A/s) page 8/15 STGWT30HP65FB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 DS11375 - Rev 3 -4 10 -3 10 -2 10 -1 10 tp (s) page 9/15 STGWT30HP65FB Test circuits 3 Test circuits Figure 27. Gate charge test circuit Figure 26. Test circuit for inductive load switching C A A k L=100 H G E B B 3.3 F C G + k RG 1000 F VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 28. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS11375 - Rev 3 page 10/15 STGWT30HP65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3P package information Figure 29. TO-3P package outline 8045950_3 DS11375 - Rev 3 page 11/15 STGWT30HP65FB TO-3P package information Table 7. TO-3P package mechanical data Dim. DS11375 - Rev 3 mm Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 OP 3.30 3.40 3.50 OP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4.00 page 12/15 STGWT30HP65FB Revision history Table 8. Document revision history Date Revision 11-Nov-2015 1 Changes First release Datasheet status promoted from preliminary to production data. 20-Jan-2017 2 Updated Features on cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Minor text changes. Updated Table 1. Absolute maximum ratings. 09-Jul-2019 3 Updated Section 4 Package information. Minor text changes. DS11375 - Rev 3 page 13/15 STGWT30HP65FB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11375 - Rev 3 page 14/15 STGWT30HP65FB IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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(c) 2019 STMicroelectronics - All rights reserved DS11375 - Rev 3 page 15/15