1
2
3
TAB
TO-3P
C(2, TAB)
E(3) NG1E3C2T
G(1)
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Power factor corrector (PFC)
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGWT30HP65FB
Product summary
Order code STGWT30HP65FB
Marking GWT30HP65FB
Package TO-3P
Packing Tube
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
STGWT30HP65FB
Datasheet
DS11375 - Rev 3 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V
IC
Continuous collector current at TC = 25 °C 60
A
Continuous collector current at TC = 100 °C 30
ICP (1) Pulsed collector current 120 A
VGE
Gate-emitter voltage ±20
V
Transient gate-emitter voltage (tp ≤ 10 μs) ±30
IF (2)
Continuous forward current at TC = 25 °C 5
A
Continuous forward current at TC = 100 °C 5
IFP (3) Pulsed forward current 10 A
PTOT Total power dissipation at TC = 25 °C 260 W
TSTG Storage temperature range -55 to 150
°C
TJOperating junction temperature range -55 to 175
1. Pulse width limited by maximum junction temperature.
2. Limited by wires.
3. Pulsed forward current.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 0.58
°C/W
RthJC Thermal resistance junction-case diode 5
RthJA Thermal resistance junction-ambient 50
STGWT30HP65FB
Electrical ratings
DS11375 - Rev 3 page 2/15
2Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES Collector-emitter breakdown
voltage VGE = 0 V, IC = 2 mA 650 V
VCE(sat) Collector-emitter saturation
voltage
VGE = 15 V, IC = 30 A 1.55 2.0
V
VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75
VFForward on-voltage
IF = 5 A 2.0
V
IF = 5 A, TJ = 125 °C 1.85
IF = 5 A, TJ = 175 °C 1.75
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
- 3659 -
pF
Coes Output capacitance - 101 -
Cres Reverse transfer capacitance - 76 -
QgTotal gate charge
VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
(see Figure 28. Gate charge test circuit)
- 149 -
nC
Qge Gate-emitter charge - 25 -
Qgc Gate-collector charge - 62 -
Table 5. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω
(see Figure 27. Test circuit for inductive
load switching)
- 146 - ns
tfCurrent fall time - 23 - ns
Eoff (1) Turn-off switching energy - 293 - µJ
td(off) Turn-off-delay time VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C
(see Figure 27. Test circuit for inductive
load switching)
- 158 - ns
tfCurrent fall time - 65 - ns
Eoff Turn-off switching energy - 572 - µJ
1. Including the tail of the collector current.
STGWT30HP65FB
Electrical characteristics
DS11375 - Rev 3 page 3/15
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 5 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs
(see Figure 27. Test circuit for inductive
load switching)
- 140 - ns
Qrr Reverse recovery charge - 21 - nC
Irrm Reverse recovery current - 6.6 - A
dIrr/dt Peak rate of fall of reverse
recovery current during tb- 430 - A/µs
Err Reverse recovery energy - 1.6 - µJ
trr Reverse recovery time
IF = 5 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs, TJ = 175 °C
(see Figure 27. Test circuit for inductive
load switching)
- 200 - ns
Qrr Reverse recovery charge - 47.3 - nC
Irrm Reverse recovery current - 9.6 - A
dIrr/dt Peak rate of fall of reverse
recovery current during tb- 428 - A/µs
Err Reverse recovery energy - 3.2 - µJ
STGWT30HP65FB
Electrical characteristics
DS11375 - Rev 3 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics (TJ = 25 °C)
GIPG280120141156FSR
100
80
60
40
20
00 1 2 3 4 5 VCE (V)
VGE =7 V
VGE =9 V
VGE =13 V
VGE =11 V
VGE =15 V
(A)
IC
Figure 2. Output characteristics (TJ = 175 °C)
GIPG280120141206FSR
100
80
60
40
20
00 1 2 3 4 5
IC
(A)
VCE (V)
VGE =7 V
VGE =9 V
VGE =11 V
VGE =13 V
VGE =15 V
Figure 3. Transfer characteristics
GIPG280120141330FSR
100
80
60
40
20
05 7 9 11 VGE (V)
Tj = 25 °C
Tj = 175 °C
VCE = 6 V
(A)
IC
Figure 4. Collector current vs case temperature
IC
60
40
20
0050 TC (°C)
75
(A)
25 100 125 150
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141346FSR
175
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
1.8
1.6
1.4
1.2
-50 0 TJ (°C)
(V)
50 100 150
2.2
2.0
VGE = 15 V
IC = 60 A
IC = 30 A
IC = 15 A
GIPG280120141440FSR
Figure 6. Total power dissipation vs case temperature
Ptot
150
100
0
050 TC (°C)
75
(W)
25 100 125 150
50
200
175
250
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141353FSR
STGWT30HP65FB
Electrical characteristics (curves)
DS11375 - Rev 3 page 5/15
Figure 7. Forward bias safe operating area
100
10
1
0.1 1VCE (V)
(A)
10 100
Vce(sat) limit
1 ms
100 μs
10 μs
(single pulse Tc = 25 °C,
TJ ≤ 175 °C, VGE = 15 V)
GIPG280120141450FSR
10 μs10 μs
IC
Figure 8. Collector current vs switching frequency
GIPG280120141713FSR
80
60
40
20
0
100101102
IC
(A)
f (kHz)
TC = 80 °C
TC = 100 °C
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C
Figure 9. Normalized VGE(th) vs junction temperature
0.8
0.7
0.6
-50 TJ(°C)
0 50 100 150
0.9
1.0
VCE = VGE, IC = 1 mA
AM16060v1
VGE(th)
(norm)
Figure 10. Normalized V(BR)CES vs junction temperature
1.1
1.0
0.9
-50 TJ(°C)
0 50 100 150
IC = 2 mA
AM16059v1
V(BR)CES
(norm)
Figure 11. Switching energy vs temperature
400
200
0
20 TJ (°C)
40 60 80 100
600
120
E
OFF
140 160
VCC = 400 V, VGE = 15 V,
Rg = 10 Ω, IC = 30 A,
GIPG280120141531FSRb
(µJ)
E
Figure 12. Switching energy vs gate resistance
420
203 10 17 24
620
31 RG (Ω)
EOFF
38 45
220
820
1020
VCC = 400 V, VGE = 15 V,
IC = 30 A, TJ = 175 °C
GIPG280120141535FSRb
(µJ)
E
STGWT30HP65FB
Electrical characteristics (curves)
DS11375 - Rev 3 page 6/15
Figure 13. Switching energy vs collector current
400
200
00IC (A)
20 40 60
600
1000
800
1200
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, TJ = 175 °C
GIPG280120141605FSRb
EOFF
(µJ)
E
Figure 14. Switching energy vs collector emitter voltage
400
200
0
150 VCE (V)
250 350 450
600
EOFF
800
TJ = 175 °C, VGE = 15 V
Rg = 10 Ω, IC = 30 A
GIPG280120141609FSRb
E
(µJ)
Figure 15. Switching times vs collector current
TJ = 175 °C, VGE = 15 V,
RG = 10 Ω, VCC = 400 V
t
IC (A)
(ns)
010 20
130
tf
tdoff
10
40 50
100
GIPG100720141533FSRb
Figure 16. Switching times vs gate resistance
TJ = 175 °C, VGE = 15 V,
IC = 30 A, VCC = 400 V
10 RG (Ω)
0 10 20
100
30
tf
40
tdoff
GIPG100720141549FSRb
t
(ns)
Figure 17. Capacitance variations
C
10 VCE (V)
(pF)
0.1 1 10
Cies
100
1000
Coes
Cres
100
GIPG090720141358FSR
Figure 18. VCE(sat) vs collector current
VCE(sat)
1.6
1.4
1.2 15 30 IC (A)
(V)
45 60
2.2
2.0
1.8
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
2.4
GIPG280120141446FSR
STGWT30HP65FB
Electrical characteristics (curves)
DS11375 - Rev 3 page 7/15
Figure 19. Gate charge vs gate-emitter voltage
IG = 1mA
4
2
00Qg (nC)
40 80 120 160
6
8
10
12
14
VCC = 520 V, IC = 30 A
16
GIPG280120141455FSR
(V)
VGE
Figure 20. Diode VF vs forward current
IGBT110120161316DVF
2.6
2.0
1.4
0.8
0.20 2 4 6 8 10 IF (A)
T j = 175 °C
T j = -40 °C
T j = 25 °C
VF
(V)
Figure 21. Reverse recovery current vs diode current
slope
IGBT020820161120RRC
12
10
8
6
4
2
00 300 600 900 1200
Irrm
(A)
VCC = 400 V
VGE = 15 V, IF = 5 A
TJ = 175 °C
di/dt(A/μs)
Figure 22. Reverse recovery time vs diode current slope
IGBT120120160820RRT
350
300
250
200
150
1000 300 600 900 1200
trr
(ns) VCC = 400 V, VGE = 15 V,
IF = 5 A, Tj = 175 °C
di/dt (A/μs)
Figure 23. Reverse recovery charge vs diode current
slope
IGBT020820161204RRQ
0.5
0.48
0.46
0.440 300 600 900 1200
IF = 5 A,
di/dt(A/μs)
rr
VCC=400 V, VGE=15 V
TJ =175 °C
Figure 24. Reverse recovery energy vs diode current
slope
IGBT020820161239RRE
55
50
45
40
35
30
250 300 600 900 1200
rr VCC = 400 V,VGE = 15 V,
IF = 5 A,TJ = 175 °C
di/dt(A/µs)
STGWT30HP65FB
Electrical characteristics (curves)
DS11375 - Rev 3 page 8/15
Figure 25. Thermal impedance for IGBT
10 10 10 10 10 tp(s)
-5 -4 -3 -2 -1
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
STGWT30HP65FB
Electrical characteristics (curves)
DS11375 - Rev 3 page 9/15
3Test circuits
Figure 26. Test circuit for inductive load switching
A A
C
E
G
B
R
G
+
-
G
C3.3
µF 1000
µF
L=100 µH
V
CC
E
D.U.T
B
AM01504v1
Figure 27. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 28. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICtd(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
STGWT30HP65FB
Test circuits
DS11375 - Rev 3 page 10/15
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3P package information
Figure 29. TO-3P package outline
8045950_3
STGWT30HP65FB
Package information
DS11375 - Rev 3 page 11/15
Table 7. TO-3P package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.60 4.80 5.00
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20.00 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
ØP 3.30 3.40 3.50
ØP1 3.10 3.20 3.30
Q 4.80 5.00 5.20
Q1 3.60 3.80 4.00
STGWT30HP65FB
TO-3P package information
DS11375 - Rev 3 page 12/15
Revision history
Table 8. Document revision history
Date Revision Changes
11-Nov-2015 1 First release
20-Jan-2017 2
Datasheet status promoted from preliminary to production data.
Updated Features on cover page.
Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics".
Minor text changes.
09-Jul-2019 3
Updated Table 1. Absolute maximum ratings.
Updated Section 4 Package information.
Minor text changes.
STGWT30HP65FB
DS11375 - Rev 3 page 13/15
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits ......................................................................10
4Package information..............................................................11
4.1 TO-3P package information .....................................................11
Revision history .......................................................................13
STGWT30HP65FB
Contents
DS11375 - Rev 3 page 14/15
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STGWT30HP65FB
DS11375 - Rev 3 page 15/15
