TOSHIBA TLP1242(C6) TOSHIBA PHOTO-INTERRUPTER INFRATED LED + PHOTOTRANSISTOR TLP124 COPIERS, PRINTERS, FAX MACHINES FANHEATERS, AIR-CONDITIONERS BANK ATMS GAME MACHINES The TLP1242 (C6) is a compact photo-interrupter which has a built-in connector and which uses a high- radiant-intensity GaAs infrared LED and an Si phototransistor. The TLP1242 (C6) is housed in a highly reliable package which eliminates the need for a printed circuit board or for soldering. It is ideal as a paper carrier location sensor for copiers and printers. The device can operate at temperatures of up to 95C. Thus the device can be used in high- temperature applications such as a paper-out sensor or in the detection of air flow direction for air- conditioner louvers. Open-collector output can be enabled using the phototransistor. 2(C6) TOSHIBA 11-15E2 Weight : 1.3 g (typ.) e Highly reliable package (device need not be attached to a PCB) e Small package e Snap-in installation e Three board thicknesses supported: 1.0mm, 1.2mm and 1.6mm e Gap : 5mm e Resolution : Slit width = 0.5mm e High-temperature operation : Topr = 95C (max) e High current transfer ratio : Ic/Ip = 5% (min) e CT connector (2-mm pitch, MT receptacle type, MT crimp receptacle typ Il) made by Tyco Electronics AMP, Ltd. Package material : Polycarbonate (UL94V-2, black) Connector material : 66 nylon (UL94V-0, white) 1 2002-03-20TOSHIBA TLP1242(C6) MARKING Connector classification se S| Monthly lot number ia Product No. by bys {Month of manufacture January to December denoted by letters A to L respectively Year of manufacture last digit of year of manufacture MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current Ip 50 mA Forward Current (Ta > 25C) 0.33 3 Derating (Ta > 85C) Alp /C 2 mA C Reverse Voltage VR 6 Vv Collector-Emitter Voltage VCEO 35 Vv Emitter-Collector Voltage VECO 5 Vv Collector Power Dissipation P 75 mW Collector Power Dissipation Derating (Ta > 25C) arc lc ~t jmwsec Collector Current Ic 50 mA Operating Temperature Range Topr 30~95 C Storage Temperature Range Tstg 40~100 C OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Min | Typ. | Max | UNIT a Forward Voltage VE Ip = 10mA 1.00] 1.15] 130) V Fa Reverse Current IR VR=5V 10] A Peak Emission Wavelength Ap Ip = 10mA 940) nm [aa] FE Dark Current Ip dcKo) | Vor = 24V, Ip = 0 |0.001} 01] 4A eB i Peak Sensitivity Wavelength Ap 870} nm 8 Current Transfer Ratio Ic/Ip |Vog =2V, Ip=10mA 5] 100| % Collector-Emitter Saturation 4 = = By Voltage VCE (sat) |r = 20mA, I = 0.5 mA 0.1}; 0385) V 3 Rise Time ty Voc =5V, I =1mA, 15 50 Fall Time tf Ry =1kQ _ is} 50| * 2 2002-03-20TOSHIBA TLP1242(C6) PIN STRENGTH (Ta = 25C) CHARACTERISTIC TEST CONDITIONS LIMIT Direction A Pulli Weight 19.6 N B peng ; g No defect in Time 5s/once lectrical Direction B characteristics A Bending Weight 9.8N | Time 5s/three times CT CONNECTOR CT connector manufactured by Tyco Electronics AMP (2mm pitch MT receptacle type) Housing-Terminal | Model Number Terminal Material AWG Size En Block Type External Diameter of Insulation Coating 173977-3 Phosphor bronze AWG26~28 0.85~1.05 mm CT connector manufactured by Tyco Electronics AMP (2mm pitch MT crimp receptacle type I) Housing 179228-3 Model Number of Terminal 179518-1 Loosen Phosph osphor _ _ 179227-1 Plugged bronze | 2WG22~26 0.93~1.5 mm togethe External Diameter of Model Number | Product Type | Material AWG Size Insulation Coating For more details of connector characteristics, please contact the relevant connector manufacturer. PRECAUTIONS 1. Keep the device away from external light. Although the photo-IC is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700nm or more is allowed to impinge on it. 2. Care must be taken in relation to the environment in which the device is tobe installed. Oil or chemicals may cause the package to melt or crack. 3. When attaching the device to the metal board, always hold the body of the device. Do not hold it by the connector. Ensure that the board is flat, and not warped or twisted. Attach the device to a metal board at room temperature. 4. Toshiba recommend attaching the device to the smoother side of the board. 5. Toshiba recommend testing the attachment strength beforehand by actually attaching a device to the board. 6. Do not apply solder to the pins of the devices connector. Make sure that the connector is plugged into the CT connector. 7. When inserting or removing the CT connector, always grasp it and its cable firmly and either plug it straight into or pull it straight out of the devices connector. If the CT connector is inserted or removed at an angle, both the devices connector and the CT connector may get damaged, resulting in an unreliable connection. 8. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. Ic/Ip(t) Po (t) Ic /Ip(0) ~ Po (0) 3 2002-03-20TOSHIBA TLP1242(C6) PACKAGE DIMENTIONS : TOSHIBA 11-15E2 Unit in mm ( ) : Reference value Tolerance are listed below unless otherwise Country of origin TOSHIBA marking SPeified (4R0.5) Dimension Tolerance 6mm or less +0.1 Greater than 6mm L}.___-_l 4} and less than or equal +0.2 o a g to 14mm H}+--1 A (1.3) | 17-b0 (6.8) | 6 5 514 5 Slit width 0.5 | C f th {pd |. Center of sensor | off mW Ht s : c : : rf ; mn ~ - ----- 3 oO oO 6) RE) 5 ] | _| - oo of al) fo' od wo ' ~ _~ . a \ (2.8) Ky s| g| s : : asst || 7ss:84 (5.5) 6 (5.5) Weight : 1.3 g (typ.) PIN CONNECTION 3. Anode 1. Collector _> 2. Cathode, Emitter 4 2002-03-20TOSHIBA TLP1242(C6) Ip (mA) ALLOWABLE FORWARD CURRENT FORWARD CURRENT If (mA) COLLECTOR CURRENT Ic (mA) 80 60 40 20 Ir Ta al P Ph | Ph rm 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) Ip VE 0.9 1.0 11 FORWARD VOLTAGE Ic IF (typ.) 1.2 1.3 VE (V) sample 1 3 5 10 FORWARD CURRENT 30 3550 Ip (mA) 100 14 100 ALLOWABLE COLLECTOR POWER DISSIPATION Po (mW) CURRENT TRANSFER RATIO Ic/Ip (%) COLLECTOR CURRENT Ic (mA) Pc - Ta 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) Ic/IF IF (typ.) Ta = 25C Vog =2V - Veg =04V sample 2 sample 1 3 5 10 30 =O 100 FORWARD CURRENT Ip (mA) Ic VCE (typ.) Ta = 25C 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE Veg (V) 2002-03-20TOSHIBA TLP1242(C6) RELATIVE Ic Ta (typ.) Ip dckEo) - Ta (typ.) 11 VoE =2V Ip = 20mA Ip =10mA Ip =5mA RELATIVE COLLECTOR CURRENT 0 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) DARK CURRENT Ipdcro) (A) VCE (sat) Ta (typ.) 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) SWITCHING TIME TEST CIRCUIT Ru Vout y 90% = voor | Uf ste | T COLLECTOR EMITTER SATURATION VOLTAGE Vox (eat) (V) td te +| |_|_ -40 -20 0 20 40 60 80 100 ts AMBIENT TEMPERATURE Ta (CC) 6 2002-03-20TOSHIBA TLP1242(C6) SWITCHING TIME (gs) RELATIVE COLLECTOR CURRENT SWITCHING CHARACTERISTICS (NON SATURATED OPERATION) _ (typ.) Ta = 25C Vcc =5V VouT=1V 0.1 0.3 0.5 1 3. 10 30 50 LOAD RESISTANCE Ry (kQ) DETECTION POSITION . CHARACTERISTICS (1) (typ.) , Ip = 10mA Vor =2V 1.0 Ta = 25C _ 0 + 0.8 a | SHUTTER Cs F LT | 04 DETECTION POSITION d=0+03mm 0.2 0! 3 -2 -1 O 1 2 3 4 DISTANCE d (mm) SWITCHING TIME (ys) RELATIVE COLLECTOR CURRENT SWITCHING CHARACTERISTICS (SATURATED OPERATION) (typ.) Ta = 25C Ip = 20 mA Voc =5V Vout = 4.65 V 1 3.5 10 30 50 100 300 500 LOAD RESISTANCE Ry, (kQ) DETECTION POSITION CHARACTERISTICS (2) (typ.) 1.0 [ Ip = 10mA 0.8 VCE =2V Ta = 25C 06 SHUTTER j _le 0.4 ] 7 METAL BOARD 12mm THICKNESS 02 | DETECTION POSITION +14 0 d=10.3-11mm 8 9 10 811 1 18 i 15 DISTANCE d (mm) 2002-03-20TOSHIBA TLP1242(C6) RELATIVE POSITIONING OF SHUTTER AND DEVICE For normal operation position the shutter and the device as shown in the figure below. By considering the devices detection direction characteristic and switching time, determine the shutter slit width and pitch. Shutter ~N = A SI | L +r-Es+ _ Center of sensor ' @} Metal board LL a Yj} Cross section between A and A Unit : mm Thickness of Metal Board a Dimension b Dimension 1.0 11.9 min 9.4 max 1.2 11.7 min 9.2 max 1.6 11.3 min 8.8 max RECOMMENDED SIZE OF CONNECTION HOLES (Unit : mm) 7.6+0.1 2 7640.1 5 7640.1 S I I % i i g Insert 3 Metal board = = Qo oO = [Attachment method] 1.0mm thick 1.2mm thick 1.6mm thick metal board metal board metal board For instruction on how to attach the device to a metal board of a type other than the ones shown above, please contact your local Toshiba sales office. 8 2002-03-20TOSHIBA TLP1242(C6) RESTRICTIONS ON PRODUCT USE 000707EAC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 9 2002-03-20