R07DS0087EJ0300 Rev.3.00 Page 1 of 7
Sep 16, 2010
Preliminary Datasheet
BCR5PM-14LG
Triac
Medium Power Use
Features
IT (RMS) : 5 A
VDRM : 800 V (Tj = 125C)
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 2000 V
The Product guarant eed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized: File No. E223904
Outline
RENESAS Package code:
PRSS0003AA-A
(Package name:
TO-220F )
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
2
13
2
13
Applications
Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and
other general controlling devices
Maximum Ratings
Voltage class
Parameter Symbol
14 Unit Conditions
800 V Tj = 125C
Repetitive peak off-state voltageNote1 V
DRM 700 V Tj = 150C
Non-repetitive peak off-state voltageNote1 V
DSM 840 V
R07DS0087EJ0300
Rev.3.00
Sep 16, 2010
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 2 of 7
Sep 16, 2010
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 5 A
Commercial frequency, sine full wave
360° conduction, Tc = 113C
Surge on-state current ITSM 50 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 10.4 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM1.8 V
Tc = 25C, ITM = 7 A,
Instantaneous measurement
V
FGT1.5 V
 V
RGT1.5 V
Gate trigger voltageNote2
 V
RGT 1.5 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT30 mA
 I
RGT30 mA
Gate trigger currentNote2
 I
RGT30 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.2/0.1 V Tj = 125C/150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) 4.9 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5/1 V/s Tj = 125C/150C
Notes: 2. Measurement using th e gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 3 of 7
Sep 16, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)× 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.00.5 1.5 2.5 3.51.02.03.0
102
101
100
101
5
7
2
3
5
7
2
3
5
7
2
3
103
7
5
3
2
7
5
3
2
102
101
103
7
5
3
2
7
5
3
2
102
101
–60 –4020 0 20 406080 100 120 160140
–60 –4020 0 20 406080 100 120 160140
Tj = 25°C
Tj = 150°C
Typical Example
IRGT IIIIRGT I
IFGT I
Typical Example
100101102
37253725
100
60
40
0
10
20
30
50
70
90
80
V
GD
= 0.1V
P
GM
= 5W
P
G(AV)
= 0.5WV
GM
= 10V
V
GT
= 1.5V I
GM
= 2A
I
FGT I
I
RGT I,
I
RGT III
23 57102
10123 5710323 57104
7
5
7
5
5
7
5
3
2
3
2
3
2
101
100
101
23 5710
3
710
4
23 510
2
23 5710
0
10
1
23 5710
1
23 5710
2
0.0
0.5
1.0
1.5
2.5
3.0
3.5
4.0
4.5
5.0
2.0
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 4 of 7
Sep 16, 2010
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)× 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
0
3
2
1
5
4
9
8
7
6
10
01234 1065789
10
3
10
–1
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
23 5723 57 23 572357 104
102
101105
103
01.51.00.52.0 2.53.0
0
20
40
80
60
100
120
140
160
10
6
10
2
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
60 –40–20 0 20 40 6080 100 120 160140
No Fins
360° Conduction
Resistive,
inductive loads
Typical Example
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0123456 87
0
20
40
80
60
100
120
140
160
0123456 87
0
20
40
80
60
100
120
140
160
All fins are
black painted
aluminum
and greased
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 5 of 7
Sep 16, 2010
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (mA)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
10
2
7
5
3
2
7
5
3
2
10
1
10
0
60 –40–20 0 20 40 6080 100 120 160140 60 –40–20 0 20 40 6080 100 120 160140
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C
)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)× 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
V
D
= 12V
Distribution
T
2
+, G+
T
2
, GTypical Example
T
2
+, G
Typical Example
Distribution
0
20
40
80
60
100
120
140
160
60 –40–20 0 20 40 6080 100 120 160140 23 5710
2
10
1
23 5710
3
23 5710
4
23 5710
2
10
1
23 5710
3
23 5710
4
0
20
40
80
60
100
120
160
140
0
20
40
80
60
100
120
160
140
2
3
5
7
2
3
5
7
10
1
10
0
10
2
10
0
10
1
10
2
10
3
372537253725
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentIT(di/dt)c
τ
VD
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
I
T
= 4A
τ = 500μs
V
D
= 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 6 of 7
Sep 16, 2010
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC)× 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
C
1
= 0.1 to 0.47μF
R
1
= 47 to 100Ω
C
0
= 0.1μF
R
0
= 100Ω
Gate Trigger Characteristics Test CircuitsRecommended Circuit Values Around The Tria
c
Test Procedure I
Test Procedure III
Test Procedure II
103
7
5
3
2
7
5
3
2
102
101
100101102
37253725
330Ω
330Ω
330Ω
C1
C0R0
R1
6Ω
6Ω
6V
6V
A
V
A
V
6Ω
6V A
V
Typical Example
I
RGT III
I
RGT I
I
FGT I
Load
2
3
5
7
2
3
5
7
101
100
102
100101102103
372537253725
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500μs
V
D
= 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
BCR5PM-14LG Preliminary
R07DS0087EJ0300 Rev.3.00 Page 7 of 7
Sep 16, 2010
Package Dimensions
SC-67 2.0g
MASS[Typ.]
PRSS0003AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
TO-220F
5.2
10.5Max
5.0
17
3.6
13.5Min
8.51.2
0.8
2.542.540.52.6
4.5
2.8
1.3Max
φ3.2±0.2
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name BCR5PM-14LG
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR5PM-14L G-A8
Note : Please confirm the specification about the shipping in detail.
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