TECHNICAL DATA ' 2N3506. CRYSTALONCS 2N3507. 2865 Veterans Highway > . a Sule 14 : Ronkonkemea NPN Silicon NY, 11779 Small-Signal Transistors designed for general-purpos switching applications. CASE 79-04 TO-205AD (TO-39) MAXIMUM RATINGS Rating Symbol 2N3506 2N3507 Unit Collactor-Emittar Voltage VCEO 40 50 Vde Collector-Base Voltage VcBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Ic 3.0 Adc Power Dissipation Pr @ Ta - 286 1.0 Watts Derate above 25C aa mwrc @ Tc = 28" ee Watts c= 25e 28.6 , Derate above 25C we Operating Junction and Storage Ty. Tstg -65 to 200 Cc Temperature Range eo Ae A AIRE MEP OED EHO SITEZNIOUOVANN, CINQuU Er were OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Ta = 2! Characteristic 5C unless otherwise noted.) | Symbol Min Mex | _unit (Ic = 10 made. tp = 0) {Ic = 100 pAdc) Collector-Emitter Sustaining voltage(") Collector-Base Breakdown Voltage 2N3506 2N3507 V(BR)CEO Voc 2N3506 2N3507 ViBR}CBO (ig = 10 pAde) Collector CutoH Current i) Base-Emitter Breakdown Voltage (Voge = 40 Vde. Vep = 4.0 Vdc} (Veg = 40 Vde, Veg = 4.0 Voc. TA = 150 ) (ce = 60 Vde. Veg = 4.0 Vac) (cE = 60 Vde, Veg = 4.0 Vde. Ta = 150 C) 2N3506 2N3507 V(BRIEBO ICEX | ON CHARACTERISTICS(1) DC Current Gain (Ig = 3.0 Adc, VCE = 5.0 Vde ) (ig = 500 MmAdc, VcE = 10 Vde) tig = 1.5 Ade, VcE = 2.0 Vac) (Ig = 2.5 Ade, VCE = 4.0 Vdc) (Ig = 3.0 Adc, VCE = .0 Vdc) (ig = 0.5 Ade. VCE = 1.0 Vdc, Ta = -55 C) (Io, = 500 mAdc, VCE = 1.0 Vde} (Ig = 1.5 Adc, Vor = 2.0 Vdc} (ic = 2.5 Ade, Vce = 30 Vdc) {Ig = 0.5 Ade, Voe = 1.0 Vdc. Ta = -55 C) 2N3506 2N3507 pAdc 10 (Ig = 1.5 Adc. Ig = 150 mAdc! (Ic = 2.5 Adc, Ip = 250 madc) ) ) Collector-Emitter Saturation Vollage (Ig = 500 mAdc, Ig = 50 mAdc) VCE(sat) (ic = 1.5 Ade, Ig = 150 mAdc (Ig = 2.5 Ade. ig = 250 mAdc w Base-Emitter Saturation Voltage (Ig = 500 mAdc. Ip = 50 mAdc) ) } SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VB = 10 Vde. Ie = O.f= 0 1 to 1 0 MHz) VBE(sat) Delay Time Rise Time Storage Time Fall Time I Hy Putoed Pulse Waetts 250 10.3800 41 Duly Cyrte 1 Ote tt 5 _ Smail-Signal Current Transter Ratio, Magnitude (Ie = 100 mAdc, VCE = 5.0 Vdc. t = 20 MHz) SWITCHING CHARACTERISTICS (See Figure 9) (Veg = 90 Vde. Io = 15 A Ig = 150 mAdc} input Capacitance (Veg = 90 Vde, Ig = 0.1= 0.110 1.0 MHz} QNS506JAN, 2N3507JAN SERIES CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vop = 30 Vide Py = 10W Initial and End Point Limits Characteristics Tested Symboi atin Mex Unit Collector Cutoff Current \GEX (Veg = 4.0 Vide, Voce = 40 Vide) 2N3506 _ 1.0 ae (Vep = 4.0 Vdc, VCE - 60 Vdc) 2N3507 _ 1.0 DC Current Gain(1) hre - (Ig = 1.5 Adc, Voce = 2.0 Vde) 2N3506 40 200 2N3507 30 150 Dette from Pre-Burr-in Measured Values Min Max Datta Collector Cutoff Current AICEX a +100 % ol Initial Value or 40.2 pAde whichever is greater int Deita DC Current Gaini1) APFE = 8 % of Initial Value i) (1) Pulsed, Pulse Width 250 10 960 us, Duty Cycle 1.0 to 2.0%.