IXGK72N60A3H1 - IXYS - Datasheet.Live

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 300 μA

TJ = 125°C 5 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 60A, VGE = 15V, Note 1 1.35 V

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (Limited by Leads) 75 A

IC110 TC= 110°C72A

IF110 TC= 110°C68A

ICM TC= 25°C, 1ms 400 A

SSOA VGE = 15V, TVJ = 125°C, RG = 3ΩICM = 150 A

(RBSOA) Clamped Inductive Load @ VCE ≤ 600 V

PCTC= 25°C 540 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting Torque (TO-264) 1.13 / 10 Nm/lb.in.

FCMounting Force (PLUS247) 20..120 / 4.5..27 N/lb.

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-264 10 g

PLUS247 6 g

DS100144(04/09)

VCES = 600V

IC110 = 72A

VCE(sat) ≤≤

≤≤

≤£ 1.35V

tfi(typ) = 250ns

IXGK72N60A3H1

IXGX72N60A3H1

GenX3TM 600V IGBT

w/Diode

Ultra-Low Vsat PT IGBTs for

up to 5kHz Switching

Advance Technical Information

Features

zOptimized for Low Conduction Losses

zSquare RBSOA

zAnti-Parallel Ultra Fast Diode

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

zInrush Current Protection Circuits

G = Gate C = Collector

E = Emitter TAB = Collector

TO-264 (IXGK)

PLUS247 (IXGX)

GCE

GDS

E

GC

(TAB)

IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.

IXGK72N60A3H1

IXGX72N60A3H1

Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Terminals: 1 - Gate 3 - Source (Emitter)

2 - Drain (Collector) 4 - Drain (Collector)

PLUS247TM (IXGX) Outline

TO-264 (IXGK) Outline

DIM INCHES MILLIMETERS

MIN MAX MIN MAX

A 0.185 0.209 4.70 5.31

A1 0.102 0.118 2.59 3.00

b 0.037 0.055 0.94 1.40

b1 0.087 0.102 2.21 2.59

b2 0.110 0.126 2.79 3.20

c 0.017 0.029 0.43 0.74

D 1.007 1.047 25.58 26.59

E 0.760 0.799 19.30 20.29

e .215 BSC 5.46 BSC

J 0.000 0.010 0.00 0.25

K 0.000 0.010 0.00 0.25

L 0.779 0.842 19.79 21.39

L1 0.087 0.102 2.21 2.59

ØP 0.122 0.138 3.10 3.51

Q 0.240 0.256 6.10 6.50

Q1 0.330 0.346 8.38 8.79

ØR 0.155 0.187 3.94 4.75

ØR1 0.085 0.093 2.16 2.36

S 0.243 0.253 6.17 6.43

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC= 60A, VCE = 10V, Note 1 48 75 S

Cies 6600 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 360 pF

Cres 80 pF

Qg 230 nC

Qge IC= 60A, VGE = 15V, VCE = 0.5 • VCES 40 nC

Qgc 80 nC

td(on) 31 ns

tri 34 ns

Eon 1.4 mJ

td(off) 320 ns

tfi 250 ns

Eoff 3.5 mJ

td(on) 29 ns

tri 34 ns

Eon 2.6 mJ

td(off) 510 ns

tfi 375 ns

Eoff 6.5 mJ

RthJC 0.23 °C/W

RthCS 0.15 °C/W

Inductive load, TJ = 25°°

°°

°C

IC = 50A, VGE = 15V

VCE = 480V, RG = 3Ω

Inductive load, TJ = 125°°

°°

°C

IC = 50A, VGE = 15V

VCE = 480V, RG = 3Ω

Reverse Diode (FRED)

(TJ = 25°C, Unless Otherwise Specified) Characteristic Values

Symbol Test Conditions Min. Typ. Max.

VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V

TJ = 150°C 1.4 1.8 V

IRM IF = 60A, VGE = 0V, TJ = 100°C 8.3 A

trr IF = 60A, -di/dt = 200A/μs, VR = 300V 140 ns

RthJC 0.3 °C/W

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXGK72N60A3H1

IXGX72N60A3H1

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VCE - Volts

IC - Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

012345678

VCE - Volts

IC

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VCE - Volts

IC - Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

VCE(sat) - Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 60A

I

C

= 30A

Fi g . 5. Co l l ect or -to -Emitter Vo l tag e

vs. Gate-to -Emitter Vo ltag e

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

56789101112131415

VGE - Volts

VCE - Volts

I

C

= 120A

60A

30A

T

J

= 25ºC

Fi g . 6. I n p u t Ad mittan ce

0

20

40

60

80

100

120

140

160

180

200

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

VGE - Volts

IC

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.

IXGK72N60A3H1

IXGX72N60A3H1

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0 20 40 60 80 100 120 140 160 180 200

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200 220 240

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 60A

I

G

= 10 mA

Fi g . 9. C ap aci tan ce

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fig. 10. Rever se-B ias Safe Op erati n g Ar ea

0

20

40

60

80

100

120

140

160

100 150 200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 3

dV / dt < 10V / ns

Fi g . 11. Maxi mum T r an si en t Thermal Imped an ce

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: G_72N60A3(76)4-23-09-C

IXGK72N60A3H1

IXGX72N60A3H1

Fig. 17. Inductive Turn-off

Switching T imes vs. Junction T emperature

220

240

260

280

300

320

340

360

380

400

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f - Nanoseconds

220

260

300

340

380

420

460

500

540

580

t

d(off) - Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 480V

I

C

= 25A, 50A, 100A

Fig. 12. Inductive Switching

Ener gy L oss vs. Gate Resistan ce

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

R

G

- Ohms

Eoff - MilliJoules

0

1

2

3

4

5

6

7

8

9

Eon - MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 100A

I

C

= 25A

Fig. 15. Inductive T urn-off

Swit ch i n g Times vs. Gate R esi sta n ce

360

363

366

369

372

375

378

381

384

387

390

0 5 10 15 20 25 30 35

R

G

- Ohms

t

f - Nanoseconds

400

500

600

700

800

900

1000

1100

1200

1300

1400

t

d(off) - Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 100A

I

C

= 50A

I

C

= 25A

Fig. 13. Inductive Switching

Ener g y L o ss vs. C o llector Cu rren t

0

2

4

6

8

10

12

14

16

18

20 30 40 50 60 70 80 90 100

I

C

- Amperes

Eoff - MilliJoules

0.00

0.75

1.50

2.25

3.00

3.75

4.50

5.25

6.00

6.75

Eon - MilliJoules

E

off

E

on

- - - -

R

G

= 3

,

V

GE

= 15V

V

CE

= 480V T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temperature

0

2

4

6

8

10

12

14

16

18

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

Eoff - MilliJoules

0

1

2

3

4

5

6

7

Eon - MilliJoules

E

off

E

on

- - - -

R

G

= 3

,

V

GE

= 15V

V

CE

= 480V

I

C

= 50A

I

C

= 100A

I

C

= 25A

Fig. 16. Inductive Turn-off

Switching T imes vs. Collector Current

220

240

260

280

300

320

340

360

380

400

20 30 40 50 60 70 80 90 100

I

C

- Amperes

t

f - Nanoseconds

250

290

330

370

410

450

490

530

570

610

t

d(off) - Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.

IXGK72N60A3H1

IXGX72N60A3H1

Fig. 18. Inductive T urn-on

Switching Times vs. Gate Resi stan c e

10

20

30

40

50

60

70

80

90

100

110

120

0 5 10 15 20 25 30 35

R

G

- Ohms

t

r

- Nanoseconds

10

20

30

40

50

60

70

80

90

100

110

120

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

TJ = 125ºC , VGE = 15V

VCE = 480V

I C = 25A

I C = 50A

I C = 100A

Fig. 19. Inductive T urn-on

Switch i n g Times vs. Co l l ecto r C u r r en t

0

10

20

30

40

50

60

70

80

90

20 30 40 50 60 70 80 90 100

I

C

- Amperes

t

r

- Nanoseconds

26

27

28

29

30

31

32

33

34

35

t d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

RG = 3

, VGE = 15V

VCE = 480V

TJ = 125ºC

TJ = 25ºC

Fig. 20. Inductive Turn-on

Switch in g Times vs. Ju n c ti on Temp er a tu re

10

20

30

40

50

60

70

80

90

100

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

26

27

28

29

30

31

32

33

34

35

t d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

RG = 3

Ω

, VGE = 15V

VCE = 480V

I C = 25A

I C = 50A

I C = 100A

IXYS REF: G_72N60A3(76)4-23-09-C

IXGK72N60A3H1

IXGX72N60A3H1

Fi g . 26 Maximum transi en t th er mal imped an ce j u n cti o n to case (for d i o d e)

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pul se Wid th [ms]

Z(th )JC - [ ºC / W ]

Fig. 21 Fig. 22

Fig. 24 Fig. 25

Fig. 23

[ s ]

IXYS REF: G_72N60A3(76)4-23-09-C