VMB70-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VMB70-12S is Designed for .112x45 FEATURES: A B * * * OmnigoldTM Metalization System OC D H J MAXIMUM RATINGS G #8-32 UNC-2A IC 12 A VCBO 36 V VCEO 18 V PDISS F E 3.5 V VEBO O 183 W @ TC = 25 C -65 OC to +200 OC TJ O -65 C to +150 C JC 1.05 OC/W CHARACTERISTICS MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J O TSTG SYMBOL I ORDER CODE: ASI10746 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V MHz PG C VCC = 12.5 V IC =5.0 A 10 f = 1.0 POUT = 70 W f = 88 MHz 7.0 mA --- --- 270 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 10 % REV. A 1/1