HYM72V32636BT8-K - Hynix Semiconductor, Inc.

32Mx64bits

PC133 SDRAM Unbuffered DIMM

based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 0.4/Mar. 02 1

HYM72V32636B(L)T8 Series

DESCRIPTION

The HYM72V32636B(L)T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits

CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.

The HYM72V32636B(L)T8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes mem-

ory. The HYM72V32636B(L)T8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and out-

puts are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.

FEATURES

• PC133/PC100MHz support

• 168pin SDRAM Unbuffered DIMM

• Serial Presence Detect with EEPROM

• 1.15” (29.21mm) Height PCB with single sided com-

ponents

• Single 3.3±0.3V power supply

• All device pins are compatible with LVTTL interface

• Data mask function by DQM

• SDRAM internal banks : four banks

• Module bank : one physical bank

• Auto refresh and self refresh

• 8192 refresh cycles / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4 or 8 or Full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

• Programmable CAS Latency ; 2, 3 Clocks

ORDERING INFORMATION

Part No. Clock

Frequency

Internal

Bank Ref. Power SDRAM

Package Plating

HYM72V32636BT8-K 133MHz

4 Banks 8K

Normal

TSOP-II Gold

HYM72V32636BT8-H

HYM72V32636BLT8-K 133MHz Low Power

HYM72V32636BLT8-H

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 2

HYM72V32636B(L)T8 Series

PIN DESCRIPTION

PIN PIN NAME DESCRIPTION

CK0~CK3 Clock Inputs The system clock input. All other inputs are registered to the SDRAM on the

rising edge of CLK

CKE0 Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one

of the states among power down, suspend or self refresh

/S0, /S2 Chip Select Enables or disables all inputs except CK, CKE and DQM

BA0, BA1 SDRAM Bank Address Selects bank to be activated during /RAS activity

Selects bank to be read/written during /CAS activity

A0 ~ A12 Address Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA9

Auto-precharge flag : A10

/RAS, /CAS, /WE Row Address Strobe, Column

Address Strobe, Write Enable

/RAS, /CAS and /WE define the operation

Refer function truth table for details

DQM0~DQM7 Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode

DQ0 ~ DQ63 Data Input/Output Multiplexed data input / output pin

VCC Power Supply (3.3V) Power supply for internal circuits and input buffers

VSS Ground Ground

SCL SPD Clock Input Serial Presence Detect Clock input

SDA SPD Data Input/Output Serial Presence Detect Data input/output

SA0~2 SPD Address Input Serial Presence Detect Address Input

WP Write Protect for SPD Write Protect for Serial Presence Detect on DIMM

NC No Connection No connection

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 3

HYM72V32636B(L)T8 Series

PIN ASSIGNMENTS

FRONT SIDE BACK SIDE FRONT SIDE BACK SIDE

PIN NO. NAME PIN NO. NAME PIN NO. NAME PIN NO. NAME

1 VSS 85 VSS 41 VCC 125 *CK1

2 DQ0 86 DQ32 42 CK0 126 A12

3 DQ1 87 DQ33 43 VSS 127 VSS

4 DQ2 88 DQ34 44 NC 128 CKE0

5 DQ3 89 DQ35 45 /S2 129 NC

6 VCC 90 VCC 46 DQM2 130 DQM6

7 DQ4 91 DQ36 47 DQM3 131 DQM7

8 DQ5 92 DQ37 48 NC 132 NC

9 DQ6 93 DQ38 49 VCC 133 VCC

10 DQ7 94 DQ39 50 NC 134 NC

Architecture Key 51 NC 135 NC

52 NC 136 NC

11 DQ8 95 DQ40 53 NC 137 NC

12 VSS 96 VSS 54 VSS 138 VSS

13 DQ9 97 DQ41 55 DQ16 139 DQ48

14 DQ10 98 DQ42 56 DQ17 140 DQ49

15 DQ11 99 DQ43 57 DQ18 141 DQ50

16 DQ12 100 DQ44 58 DQ19 142 DQ51

17 DQ13 101 DQ45 59 VCC 143 VCC

18 VCC 102 VCC 60 DQ20 144 DQ52

19 DQ14 103 DQ46 61 NC 145 NC

20 DQ15 104 DQ47 62 NC 146 NC

21 NC 105 NC 63 NC 147 NC

22 NC 106 NC 64 VSS 148 VSS

23 VSS 107 VSS 65 DQ21 149 DQ53

24 NC 108 NC 66 DQ22 150 DQ54

25 NC 109 NC 67 DQ23 151 DQ55

26 VCC 110 VCC 68 VCC 152 VCC

27 /WE 111 /CAS 69 DQ24 153 DQ56

28 DQM0 112 DQM4 70 DQ25 154 DQ57

29 DQM1 113 DQM5 71 DQ26 155 DQ58

30 /S0 114 NC 72 DQ27 156 DQ59

31 NC 115 /RAS 73 VCC 157 VCC

32 VSS 116 VSS 74 DQ28 158 DQ60

33 A0 117 A1 75 DQ29 159 DQ61

34 A2 118 A3 76 DQ30 160 DQ62

35 A4 119 A5 77 DQ31 161 DQ63

36 A6 120 A7 78 VSS 162 VSS

37 A8 121 A9 79 CK2 163 *CK3

38 A10/AP 122 BA0 80 NC 164 NC

39 BA1 123 A11 81 WP 165 SA0

40 VCC 124 VCC 82 SDA 166 SA1

Voltage Key 83 SCL 167 SA2

84 VCC 168 VCC

Note : * CK1 and CK3 are connected with termination R/C (Rsfer to the block diagram)

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 4

HYM72V32636B(L)T8 Series

BLOCK DIAGRAM

Note : 1. The serial resistor values of DQs are 10ohms

2. The padding capacitance of termination R/C for CK1,CK3 is 10pF

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 5

HYM72V32636B(L)T8 Series

SERIAL PRESENCE DETECT

BYTE

NUMBER

FUNCTION

DESCRIPTION

FUNCTION VALUE

NOTE

-K -H -K -H

BYTE0 # of Bytes Written into Serial Memory at Module

Manufacturer 128 Bytes 80h

BYTE1 Total # of Bytes of SPD Memory Device 256 Bytes 08h

BYTE2 Fundamental Memory Type SDRAM 04h

BYTE3 # of Row Addresses on This Assembly 13 0Dh 1

BYTE4 # of Column Addresses on This Assembly 10 0Ah

BYTE5 # of Module Banks on This Assembly 1 Bank 01h

BYTE6 Data Width of This Assembly 64 Bits 40h

BYTE7 Data Width of This Assembly (Continued) - 00h

BYTE8 Voltage Interface Standard of This Assembly LVTTL 01h

BYTE9 SDRAM Cycle Time @/CAS Latency=3 7.5ns 7.5ns 75h 75h

BYTE10 Access Time from Clock @/CAS Latency=3 5.4ns 5.4ns 54h 54h

BYTE11 DIMM Configuration Type None 00h

BYTE12 Refresh Rate/Type 7.8125us

/ Self Refresh Supported 82h

BYTE13 Primary SDRAM Width x8 08h

BYTE14 Error Checking SDRAM Width None 00h

BYTE15 Minimum Clock Delay Back to Back Random Column

Address tCCD = 1 CLK 01h

BYTE16 Burst Lenth Supported 1,2,4,8,Full Page 8Fh 2

BYTE17 # of Banks on Each SDRAM Device 4 Banks 04h

BYTE18 SDRAM Device Attributes, /CAS Lataency CL =2,3 CL=2,3 06h 06h

BYTE19 SDRAM Device Attributes, /CS Lataency /CS Latency=0 01h

BYTE20 SDRAM Device Attributes, /WE Lataency /WE Latency=0 01h

BYTE21 SDRAM Module Attributes Neither Buffered nor Registered 00h

BYTE22 SDRAM Device Attributes, General

+/- 10% voltage tolerence, Burst Read

Single Bit Write, Precharge All, Auto

Precharge, Early RAS Precharge

0Eh

BYTE23 SDRAM Cycle Time @/CAS Latency=2 7.5ns 10ns 75h A0h

BYTE24 Access Time from Clock @/CAS Latency=2 5.4ns 6ns 54h 60h

BYTE25 SDRAM Cycle Time @/CAS Latency=1 - - 00h 00h

BYTE26 Access Time from Clock @/CAS Latency=1 - - 00h 00h

BYTE27 Minimum Row Precharge Time (tRP) 15ns 20ns 0Fh 14h

BYTE28 Minimum Row Active to Row Active Delay (tRRD) 15ns 15ns 0Fh 0Fh

BYTE29 Minimum /RAS to /CAS Delay (tRCD) 15ns 20ns 0Fh 14h

BYTE30 Minimum /RAS Pulse Width (tRAS) 45ns 45ns 2Dh 2Dh

BYTE31 Module Bank Density 256MB 40h

BYTE32 Command and Address Signal Input Setup Time 1.5ns 1.5ns 15h 15h

BYTE33 Command and Address Signal Input Hold Time 0.8ns 0.8ns 08h 08h

BYTE34 Data Signal Input Setup Time 1.5ns 1.5ns 15h 15h

BYTE35 Data Signal Input Hold Time 0.8ns 0.8ns 08h 08h

BYTE36

~61 Superset Information (may be used in future) - 00h

BYTE62 SPD Revision Intel SPD 1.2B 12h 3, 8

BYTE63 Checksum for Byte 0~62 - B7h F8h

BYTE64 Manufacturer JEDEC ID Code Hynix JEDED ID ADh

BYTE65

~71 ....Manufacturer JEDEC ID Code Unused FFh

BYTE72 Manufacturing Location

Hynix (Korea Area)

HSA (United States Area)

HSE (Europe Area)

HSJ (Japan Area)

HSS(Singapore)

ASIA Area

0*h

1*h

2*h

3*h

4*h

5*h

11

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 6

HYM72V32636B(L)T8 Series

BYTE

NUMBER

FUNCTION

DESCRIPTION

FUNCTION VALUE

NOTE

-K -H -K -H

BYTE73 Manufacturer’s Part Number (Component) 7 (SDRAM) 37h 4, 5

BYTE74 Manufacturer’s Part Number (256Mb based) 2 32h 4, 5

BYTE75 Manufacturer’s Part Number (Voltage Interface) V (3.3V, LVTTL) 56h 4, 5

BYTE76 Manufacturer’s Part Number (Memory Width) 3 33h 4, 5

BYTE77 ....Manufacturer’s Part Number (Memory Width) 2 32h 4, 5

BYTE79 ....Manufacturer’s Part Number (Data Width) 6 36h 4, 5

BYTE80 Manufacturer’s Part Number (Refresh, SDRAM Bank) 3 33h 4, 5

BYTE81 Manufacturer’s Part Number (Package Type) 6 (8K Refresh, 4Banks) 36h 4, 5

BYTE82 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5

BYTE83 Manufacturer’s Part Number (Package Type) T 54h 4, 5

BYTE84 Manufacturer’s Part Number (Component Configuration) 8 (x8 based) 48h 4, 5

BYTE85 Manufacturer’s Part Number (Hyphent) - (Hyphen) 2Dh 4, 5

BYTE86 Manufacturer’s Part Number (Min. Cycle Time) K H 4Bh 48h 4, 5

BYTE87

~90 Manufacturer’s Part Number Blanks 20h 4, 5

BYTE91 Revision Code (for Component) Process Code - 4, 6

BYTE92 ....Revision Code (for PCB) Process Code - 4, 6

BYTE93 Manufacturing Date Yea r - 3, 6

BYTE94 ....Manufacturing Date Work Week - 3, 6

BYTE95

~98 Assembly Serial Number --6

BYTE99

~125 Manufacturer Specific Data (may be used in future) None 00h

BYTE126 Reserved Refer to Note9 64h 7, 8, 9

BYTE127 Intel Specification Details for 100MHz Support Refer to Note7 AFh 7, 8, 9

BYTE128

~256 Unused Storage Locations -00h

Continued

Note :

1. The bank address is excluded

2. 1, 2, 4, 8 for Interleave Burst Type

3. BCD adopted

4. ASCII adopted

5. Basically Hynix writes Part No. except for ‘HYM’ in Byte 73~90 to use the limited 18 bytes from byte 73 to byte 90

6. Not fixed but dependent

7. CK0, CK2 connected to DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge suport

8. Refer to the most recent Intel and JEDEC SPD Specification

9. These values are applied to PC100 applications only per Intel PC SDRAM specification

10. In the case of L-Part, character ‘L’ will be added between byte 81 and byte 82

11. Refer to Hynix web site

Byte 82~87 for L-Part

BYTE

NUMBER

FUNCTION

DESCRIPTION

FUNCTION VALUE

NOTE

-K -H -K -H

BYTE82 Manufacturer’s Part Number(Manufacturing Site) B 42h 4, 5

BYTE83 Manufacturer’s Part Number (Power) L4Ch4, 5

BYTE84 Manufacturer’s Part Number (Package Type) T 54h 4, 5

BYTE85 Manufacturer’s Part Number (Component Configuration) 8 (x8 based) 38h 4, 5

BYTE86 Manufacturer’s Part Number (Hyphent) - (Hyphen) 2Dh 4, 5

BYTE87 Manufacturer’s Part Number (Min. Cycle Time) K H 4Bh 48h 4, 5

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 7

HYM72V32636B(L)T8 Series

ABSOLUTE MAXIMUM RATINGS

Note : Operation at above absolute maximum rating can adversely affect device reliability.

DC OPERATING CONDITION (TA=0 to 70°C)

Note :

1.All voltages are referenced to VSS = 0V

2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.

AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)

Note :

1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output

load circuit

Parameter Symbol Rating Unit

Ambient Temperature TA0 ~ 70 °C

Storage Temperature TSTG -55 ~ 125 °C

Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V

Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V

Short Circuit Output Current IOS 50 mA

Power Dissipation PD1W

Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec

Parameter Symbol Min Typ Max Unit Note

Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1

Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2

Input Low voltage VIL -0.3 0 0.8 V 1,3

Parameter Symbol Value Unit Note

AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V

Input Timing Measurement Reference Level Voltage Vtrip 1.4 V

Input Rise / Fall Time tR / tF 1 ns

Output Timing Measurement Reference Level Voltage Voutref 1.4 V

Output Load Capacitance for Access Time Measurement CL50 pF 1

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 8

HYM72V32636B(L)T8 Series

CAPACITANCE (TA=25°C, f=1MHz)

OUTPUT LOAD CIRCUIT

Parameter Pin Symbol

-K/H

Unit

Min Max

Input Capacitance

CK0, CK2 CI1 37 43 pF

CKE0 CI2 45 55 pF

/S0, /S2 CI3 25 35 pF

A0~12, BA0, BA1 CI4 45 60 pF

/RAS, /CAS, /WE CI5 45 60 pF

DQM0~DQM7 CI6813pF

Data Input / Output Capacitance DQ0 ~ DQ63 CI/O 612pF

Vtt=1.4V

RT=250 Ω

50pF

Output

50pF

Output

DC Output Load Circuit AC Output Load Circuit

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 9

HYM72V32636B(L)T8 Series

DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)

Note :

1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V

2.DOUT is disabled, VOUT=0 to 3.6

DC CHARACTERISTICS II

Note :

1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3. HYM72V32636BT8-K/H

4. HYM72V32636BLT8-K/H

Parameter Symbol Min. Max Unit Note

Input Leakage Current ILI -16 16 uA 1

Output Leakage Current ILO -1 1 uA 2

Output High Voltage VOH 2.4 - V IOH = -4mA

Output Low Voltage VOL -0.4VIOL = +4mA

Parameter Symbol Test Condition

Speed

Unit Note

-K -H

Operating Current IDD1 Burst length=1, One bank active

tRC ≥ tRC(min), IOL=0mA 880 mA 1

Precharge Standby Current

in Power Down Mode

IDD2P CKE ≤ VIL(max), tCK = min 16

mA

IDD2PS CKE ≤ VIL(max), tCK = ∞16

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

160

mA

IDD2NS CKE ≥ VIH(min), tCK = ∞

Input signals are stable. 80

Active Standby Current

in Power Down Mode

IDD3P CKE ≤ VIL(max), tCK = min 56

mA

IDD3PS CKE ≤ VIL(max), tCK = ∞56

Active Standby Current

in Non Power Down Mode

IDD3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

320

mA

IDD3NS CKE ≥ VIH(min), tCK = ∞

Input signals are stable. 320

Burst Mode Operating

Current IDD4 tCK ≥ tCK(min), IOL=0mA

All banks active 960 mA 1

Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active 1760 mA 2

Self Refresh Current IDD6 CKE ≤ 0.2V

Normal 32 mA 3

Low power 16 mA 4

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 10

HYM72V32636B(L)T8 Series

AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)

Note :

1.Assume tR / tF (input rise and fall time ) is 1ns

If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter

2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v

If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter

Parameter Symbol

-K -H

Unit Note

MinMaxMinMax

System Clock

Cycle Time

CAS Latency = 3 tCK3 7.5

1000

7.5

1000

ns

CAS Latency = 2 tCK2 7.5 10 ns

Clock High Pulse Width tCHW 2.5 - 2.5 - ns 1

Clock Low Pulse Width tCLW 2.5 - 2.5 - ns 1

Access Time

From Clock

CAS Latency = 3 tAC3 - 5.4 - 5.4 ns

2

CAS Latency = 2 tAC2 - 6 - 6 ns

Data-Out Hold Time tOH 2.7 - 2.7 - ns

Data-Input Setup Time tDS 1.5 - 1.5 - ns 1

Data-Input Hold Time tDH 0.8 - 0.8 - ns 1

Address Setup Time tAS 1.5 - 1.5 - ns 1

Address Hold Time tAH 0.8 - 0.8 - ns 1

CKE Setup Time tCKS 1.5 - 1.5 - ns 1

CKE Hold Time tCKH 0.8 - 0.8 - ns 1

Command Setup Time tCS 1.5 - 1.5 - ns 1

Command Hold Time tCH 0.8 - 0.8 - ns 1

CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns

CLK to Data

Output in High-Z

Time

CAS Latency = 3 tOHZ3 2.7 5.4 2.7 5.4 ns

CAS Latency = 2 tOHZ2 2.7 5.4 3 6 ns

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 11

HYM72V32636B(L)T8 Series

AC CHARACTERISTICS II

Note :

1. A new command can be given tRRC after self refresh exit

DEVICE OPERATING OPTION TABLE

HYM72V32636B(L)T8-K

HYM72V32636B(L)T8-H

Parameter Symbol

-K -H

Unit Note

Min Max Min Max

RAS Cycle Time

Operation tRC 60 - 65 - ns

Auto Refresh tRRC 60 - 65 - ns

RAS to CAS Delay tRCD 15 - 20 - ns

RAS Active Time tRAS 45 100K 45 100K ns

RAS Precharge Time tRP 15 - 20 - ns

RAS to RAS Bank Active Delay tRRD 15 - 15 - ns

CAS to CAS Delay tCCD 1 - 1 - CLK

Write Command to Data-In Delay tWTL 0 - 0 - CLK

Data-In to Precharge Command tDPL 2 - 2 - CLK

Data-In to Active Command tDAL 5 - 5 - CLK

DQM to Data-Out Hi-Z tDQZ 2 - 2 - CLK

DQM to Data-In Mask tDQM 0 - 0 - CLK

MRS to New Command tMRD 2 - 2 - CLK

Precharge to Data

Output Hi-Z

CAS Latency = 3 tPROZ3 3 - 3 - CLK

CAS Latency = 2 tPROZ2 2 - 2 - CLK

Power Down Exit Time tPDE 1 - 1 - CLK

Self Refresh Exit Time tSRE 1 - 1 - CLK 1

Refresh Time tREF - 64 - 64 ms

CAS Latency tRCD tRAS tRC tRP tAC tOH

133MHz(7.5ns) 2CLKs 2CLKs 6CLKs 8CLKs 2CLKs 5.4ns 2.7ns

125MHz(8ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns

125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 12

HYM72V32636B(L)T8 Series

COMMAND TRUTH TABLE

Note :

1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high

2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,

Opcode = Operand Code, NOP = No Operation

Command CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/

AP BA Note

Mode Register Set H X L L L L X OP code

No Operation H X

HXXX

XX

LHHH

Bank Active H X L L H H X RA V

Read

H X LHLHXCA

L

V

Read with Autoprecharge H

Write

HXLHLLXCA

L

V

Write with Autoprecharge H

Precharge All Banks

HXLLHLXX

HX

Precharge selected Bank LV

Burst Stop H X L H H L X X

DQM H X V X

Auto Refresh H H L L L H X X

Burst-Read-Single-

WRITE H XLLLHX A9 Pin High

(Other Pins OP code)

Self Refresh1

Entry H L LLLHX

X

Exit L H

HXXX

X

LHHH

Precharge

power down

Entry H L

HXXX

X

LHHH

Exit L H

HXXX

X

LHHH

Clock

Suspend

Entry H L

HXXX

X

XLVVV

Exit L H X X

PC133 SDRAM Unbuffered DIMM

Rev. 0.4/Mar. 02 13

HYM72V32636B(L)T8 Series

PACKAGE DEMENSION

1.15(29.21)