zzzzApplications
High-frequency rectification
Switching regulators
zzzzFeatures
1) Small surface mounting type.
2) Ultra low VF(VF=0.45V Typ. at 0.5A)
3) High reliability.
3) Pb-Free package is available.
zzzzConstruction
Silicon epitaxial planar
z
zz
zAbsolute maximum ratings (Ta = 25°C )
Parameter Symbol Limits Unit
Peak reverse voltage
V
RM
V
DC reverse voltage
V
R
V
Mean rectifying current
I
O
0.5 A
Peak forward surge current∗
2A
125 °C
Storage temperature
°C
30
20
Junction temperature
I
FSM
−40~+125
Tj
Tstg
∗ 60Hz for 1
z
zz
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
F1
−0.36 V I
F
= 100mA
V
F2
−0.54 V I
F
= 500mA
Reverse current −−100 µAV
R
= 20V
I
R
−
−
1
CATHODE 2
ANODE
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
CASE 477– 02, STYLE 1
SOD– 323
1
2
LRB551V-30T1
LRB551V-30T1
LRB551V-30T1-1/3
Device Marking Shipping
LRB551V-30T1 D 3000/Tape&Reel
LRB551V-30T1G D
(Pb-Free) 3000/Tape&Reel
z
zz
zDevice Marking and Ordering Information
z
zz
zElectrical characteristic curves (Ta = 25°C )
0.0
100µ
1A
1m
10m
100m
I
F
(A)
V
F
(V)
0.1 0.2 0.3 0.4 0.5
10A
25
˚C
−25
˚C
75
˚C
125˚C
Fig.1 Forward characteristics
0
I
R
(A)
V
R
(V)
100n
1µ
10µ
100µ
1m
10m
100m
4010 20 30
25
˚C
−25
˚C
75
˚C
125
˚C
Fig.2 Reverse characteristics
0.0
10.0
1.0
100.0
10.0 20.0 30.0 40.0
Ct (pF)
V
R
(V)
1000.0
Fig.3 Capacitance between
terminals characteristics
0
0.5
1.0
50 75 100 150
Io (A)
Fig.4 Derating curve
25 125
Ta (°C)
LESHAN RADIO COMPANY, LTD.
LRB551V-30T1
LRB551V-30T1-2/3
K
A
D
12B
C
E
0.63
0.02''
0.83
0.033''
1.60
0.063"
2.85
0.112''
mm
inches
H
J
SOD
-
323
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
MIN MAX MIN MAX
1.60 1.80 0.063 0.071
1.15 1.35 0.045 0.053
0.80 1.00 0.031 0.039
0.25 0.40 0.010 0.016
0.15 REF 0.006 REF
0.00 0.10 0.000 0.004
0.089 0.177 0.0035 0.0070
2.30 2.70 0.091 0.106
MILLIMETERS
DIM
A
B
C
D
E
H
J
K
INCHES
PIN: 1. CATHODE
2. ANODE
LESHAN RADIO COMPANY, LTD.
LRB551V-30T1
LRB551V-30T1-3/3
