
CMPD2003 CMPD2004
CMPD2003A CMPD2004A
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004A, CMPD2004C and CMPD2004S types
are silicon switching diodes manufactured by the
epitaxial planar process, designed for applications
requiring high voltage capability.
The following configurations are available:
CMPD2003 SINGLE MARKING CODE: A82
CMPD2003A DUAL, COMMON ANODE MARKING CODE: 8A2
CMPD2003C DUAL, COMMON CATHODE MARKING CODE: C3C
CMPD2003S DUAL, IN SERIES MARKING CODE: C3S
CMPD2004 SINGLE MARKING CODE: D53
CMPD2004A DUAL, COMMON ANODE MARKING CODE: DB8
CMPD2004C DUAL, COMMON CATHODE MARKING CODE: DB7
CMPD2004S DUAL, IN SERIES MARKING CODE: DB6
CMPD2003 CMPD2004
CMPD2003A CMPD2004A
CMPD2003C CMPD2004C
MAXIMUM RATINGS: (TA=25°C) SYMBOL CMPD2003S CMPD2004S UNITS
Continuous Reverse Voltage VR 200 240 V
Peak Repetitive Reverse Voltage VRRM 250 300 V
Average Forward Current IO 200 200 mA
Continous Forward Current IF 250 225 mA
Peak Repetitive Forward Current IFRM 625 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
SOT-23 CASE
R9 (25-January 2010)
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