W986416EH/W9864G6EH Data Sheet 1M x 4 BANKS x 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION ......................................................................................................... 3 2. FEATURES ................................................................................................................................. 3 3. AVAILABLE PART NUMBER ..................................................................................................... 3 4. PIN CONFIGURATION ............................................................................................................... 4 5. PIN DESCRIPTION..................................................................................................................... 5 6. BLOCK DIAGRAM ...................................................................................................................... 6 7. FUNCTIONAL DESCRIPTION ................................................................................................... 7 8. 7.1 Power Up and Initialization ............................................................................................. 7 7.2 Programming Mode Register.......................................................................................... 7 7.3 Bank Activate Command ................................................................................................ 7 7.4 Read and Write Access Modes ...................................................................................... 7 7.5 Burst Read Command .................................................................................................... 8 7.6 Burst Command.............................................................................................................. 8 7.7 Read Interrupted by a Read ........................................................................................... 8 7.8 Read Interrupted by a Write............................................................................................ 8 7.9 Write Interrupted by a Write............................................................................................ 8 7.10 Write Interrupted by a Read............................................................................................ 8 7.11 Burst Stop Command ..................................................................................................... 9 7.12 Addressing Sequence of Sequential Mode .................................................................... 9 7.13 Addressing Sequence of Interleave Mode ..................................................................... 9 7.14 Auto-precharge Command ........................................................................................... 10 7.15 Precharge Command.................................................................................................... 10 7.16 Self Refresh Command ................................................................................................ 10 7.17 Power Down Mode ....................................................................................................... 11 7.18 No Operation Command............................................................................................... 11 7.19 Deselect Command ...................................................................................................... 11 7.20 Clock Suspend Mode.................................................................................................... 11 TABLE OF OPERATING MODES ............................................................................................ 12 8.1 9. Simplified State Diagram .............................................................................................. 13 ELECTRICAL CHARACTERISTICS......................................................................................... 14 9.1 Absolute Maximum Rating............................................................................................ 14 9.2 Recommended DC Operating Conditions .................................................................... 14 9.3 Capacitance .................................................................................................................. 14 -1- Publication Release Date: May 5, 2005 Revision A07 W986416EH/W9864G6EH 10. 11. 12. 9.4 DC Characteristics........................................................................................................ 15 9.5 AC Characteristics ........................................................................................................ 16 TIMING WAVEFORMS ............................................................................................................. 19 10.1 Command Input Timing ................................................................................................ 19 10.2 Read Timing.................................................................................................................. 20 10.3 Control Timing of Input Data......................................................................................... 21 10.4 Control Timing of Output Data ...................................................................................... 22 10.5 Mode Register Set Cycle .............................................................................................. 23 OPERATING TIMING EXAMPLE ............................................................................................. 24 11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 24 11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)............ 25 11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 26 11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)............ 27 11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 28 11.6 Interleaved Bank Write (Burst Length = 8, Autoprecharge) ......................................... 29 11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 30 11.8 Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)..................................... 31 11.9 Autoprecharge Read (Burst Length = 4, CAS Latency = 3) ......................................... 32 11.10 Autoprecharge Write (Burst Length = 4) ..................................................................... 33 11.11 Autorefresh Cycle........................................................................................................ 34 11.12 Self-refresh Cycle........................................................................................................ 35 11.13 Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)............................. 36 11.14 Power-down Mode ...................................................................................................... 37 11.15 Auto-precharge Timing (Write Cycle).......................................................................... 38 11.16 Auto-precharge Timing (Read Cycle) ......................................................................... 39 11.17 Timing Chart of Read to Write Cycle........................................................................... 40 11.18 Timing Chart of Write to Read Cycle........................................................................... 41 11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 42 11.20 Timing Chart of Burst Stop Cycle (Precharge Command).......................................... 43 11.21 CKE/DQM Input Timing (Write Cycle)......................................................................... 44 11.22 CKE/DQM Input Timing (Read Cycle)......................................................................... 45 11.23 Self Refresh/Power Down Mode Exit Timing .............................................................. 46 PACKAGE DIMENSIONS ......................................................................................................... 47 12.1 13. 54L TSOP (II)-400 mil................................................................................................... 47 REVISION HISTORY ................................................................................................................ 48 -2- W986416EH/W9864G6EH 1. GENERAL DESCRIPTION W986416EH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Using pipelined architecture and 0.13 m process technology, W986416EH delivers a data bandwidth of up to 400M bytes per second (-5). For different application, W986416EH is sorted into the following speed grades: -5, -6, -7. The -5 parts can run up to 200MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143MHz/CL3. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986416EH is ideal for main memory in high performance applications. 2. FEATURES * 2.7V~3.6V power supply * Power-down Mode * 1048576 words x 4 banks x 16 bits organization * Auto-precharge and controlled precharge * 4K refresh cycles/64 mS * Self Refresh Current: Standard and Low Power * Interface: LVTTL * CAS latency: 2 and 3 * * Burst Length: 1, 2, 4, 8, and full page Packaged in TSOP II 54-pin, 400 mil - 0.80 W9864G6EH is using Lead free materials, * Sequential and Interleave burst * Burst read, single write operation * Byte data controlled by DQM * RoHS compliant * The -7 grade can support 2.7V~3.6V power supply. 3. AVAILABLE PART NUMBER PART NUMBER SPEED (CL = 3) SELF REFRESH CURRENT (MAX.) OPERATING TEMPERATURE W986416EH-5 200 MHz 3 mA 0C ~ 70C W986416EH-6 166 MHz 3mA 0C ~ 70C W986416EH-7 143 MHz 3mA 0C ~ 70C -3- Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 4. PIN CONFIGURATION V CC 1 54 V SS DQ0 2 53 DQ15 V CC Q 3 52 V SS Q DQ1 4 51 DQ14 DQ2 5 50 DQ13 V SS Q 6 49 V CC Q DQ3 7 48 DQ12 DQ4 8 47 DQ11 V CC Q 9 46 V SS Q DQ5 10 45 DQ10 DQ6 11 44 DQ9 V SS Q 12 43 V CC Q DQ7 13 42 DQ8 V CC 14 41 V SS LDQM 15 40 NC WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 NC BS0 20 35 A11 BS1 21 34 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 V CC 27 28 V SS -4- W986416EH/W9864G6EH 5. PIN DESCRIPTION PIN NUMBER PIN NAME FUNCTION DESCRIPTION Multiplexed pins for row and column address. 23 ~ 26, 22, 29 ~35 A0-A11 Address Row address: A0-A11. Column address: A0-A7. A10 is sampled during a precharge command to determine if all banks are to be precharged or bank selected by BS0, BS1. BS0, BS1 Bank Select Select bank to activate during row address latch time, or bank to read/write during address latch time. DQ0-DQ15 Data Input/ Output Multiplexed pins for data output and input. 19 CS Chip Select Disable or enable the command decoder. When command decoder is disabled, new command is ignored and previous operation continues. 18 RAS Row Address Strobe Command input. When sampled at the rising edge of the clock RAS , CAS and WE define the operation to be executed. 17 CAS Column Address Strobe Referred to RAS 16 WE Write Enable Referred to RAS 20, 21 2, 4, 5, 7, 8, 10, 11, 13, 42, 44, 45, 47, 48, 50, 51, 53 LDQM Input/output mask The output buffer is placed at Hi-Z (with latency of 2) when DQM is sampled high in read cycle. In write cycle, sampling DQM high will block the write operation with zero latency. 38 CLK Clock Inputs System clock used to sample inputs on the rising edge of clock. 37 CKE Clock Enable CKE controls the clock activation and deactivation. When CKE is low, Power Down mode, Suspend mode, or Self Refresh mode is entered. 1, 14, 27 VCC Power (+3.3V) Power for input buffers and logic circuit inside DRAM. 28, 41, 54 VSS Ground Ground for input buffers and logic circuit inside DRAM. 3, 9, 43, 49 VCCQ Power (+3.3V) for I/O buffer Separated power from VCC, to improve DQ noise immunity. 6, 12, 46, 52 VSSQ Ground for I/O buffer Separated ground from VSS, to improve DQ noise immunity. NC No Connection No connection 39, 15 36, 40 UDQM -5- Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 6. BLOCK DIAGRAM CLK CLOCK BUFFER CKE CONTROL CS GENERATOR DECODER COLUMN DECODER ROW DECODER WE A10 MODE REGISTER A0 CELL ARRAY BANK #1 SENSE AMPLIFIER SENSE AMPLIFIER ADDRESS BUFFER DATA CONTROL CIRCUIT REFRESH COUNTER DQ BUFFER COLUMN DQ0 DQ15 UDQM LDQM COUNTER COLUMN DECODER ROW DECODER A9 A11 BS0 BS1 CELL ARRAY BANK #0 COLUMN DECODER ROW DECODER CAS SIGNAL COMMAND CELL ARRAY BANK #2 COLUMN DECODER ROW DECODER RAS SENSE AMPLIFIER NOTE: The cell array configuration is 4096 * 256 * 16 -6- CELL ARRAY BANK #3 SENSE AMPLIFIER W986416EH/W9864G6EH 7. FUNCTIONAL DESCRIPTION 7.1 Power Up and Initialization The default power up state of the mode register is unspecified. The following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs. During power up, all VCC and VCCQ pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power up voltage must not exceed VCC +0.3V on any of the input pins or VCC supplies. After power up, an initial pause of 200 S is required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation. 7.2 Programming Mode Register After initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to tRSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table. 7.3 Bank Activate Command The Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RAS to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is specified as TRAS (max.). 7.4 Read and Write Access Modes After a bank has been activated, a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage level defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle. -7- Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 7.5 Burst Read Command The Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page explain the address sequence of interleave mode and sequence mode. 7.6 Burst Command The Burst Write command is initiated by applying logic low level to CS , CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be ignored. 7.7 Read Interrupted by a Read A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS latency from the interrupting Read Command the is satisfied. 7.8 Read Interrupted by a Write To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed. 7.9 Write Interrupted by a Write A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied. 7.10 Write Interrupted by a Read A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored. -8- W986416EH/W9864G6EH 7.11 Burst Stop Command A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write operation, then any residual data from the burst write cycle will be ignored. 7.12 Addressing Sequence of Sequential Mode A column access is performed by increasing the address from the column address which is input to the device. The disturb address is varied by the Burst Length as shown in Table 2. Table 2 Address Sequence of Sequential Mode DATA ACCESS ADDRESS BURST LENGTH Data 0 n BL = 2 (disturb address is A0) Data 1 n+1 No address carry from A0 to A1 Data 2 n+2 BL = 4 (disturb addresses are A0 and A1) Data 3 n+3 No address carry from A1 to A2 Data 4 n+4 Data 5 n+5 BL = 8 (disturb addresses are A0, A1 and A2) Data 6 n+6 No address carry from A2 to A3 Data 7 n+7 7.13 Addressing Sequence of Interleave Mode A column access is started in the input column address and is performed by inverting the address bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode DATA ACCESS ADDRESS BUST LENGTH Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 2 Data 1 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 2 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 3 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 4 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 5 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 6 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 7 A8 A7 A6 A5 A4 A3 A2 A1 A0 -9- BL = 4 BL = 8 Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 7.14 Auto-precharge Command If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is entered. During auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS latency. A Read or Write Command with auto-precharge cannot be interrupted before the entire burst operation is completed for the same bank. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with auto-precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (tRP) has been satisfied. Issue of AutoPrecharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation two clocks delay from the last burst write cycle. This delay is referred to as write tDPL. The bank undergoing auto-precharge cannot be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Autoprecharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS (min). 7.15 Precharge Command The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately or all banks simultaneously. Three address bits, A10, BS0, and BS1 are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time (tRP). 7.16 Self Refresh Command The Self Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE must be held low to keep the device in Self Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the device exits Self Refresh Operation and before the next command can be issued. This delay is equal to the tAC cycle time plus the Self Refresh exit time. If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4,096 AUTO REFRESH cycles should be completed just prior to entering and just after exiting the self refresh mode. - 10 - W986416EH/W9864G6EH 7.17 Power Down Mode The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power Down mode does not perform any refresh operations, therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the device. The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on tCK. The input buffers need to be enabled with CKE held high for a period equal to tCKS (min.) + tCK (min.). 7.18 No Operation Command The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS , CAS , and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle. 7.19 Deselect Command The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS , CAS , and WE signals become don't cares. 7.20 Clock Suspend Mode During normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay from when CKE returns high to when Clock Suspend mode is exited. - 11 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 8. TABLE OF OPERATING MODES Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth table for the operation commands. Table 1 Truth Table (Note 1, 2) KEN DQM Command evice State KEn-1 KEn DQM BS0, 1 A10 A0-A9 CS RAS CAS WE Bank Active Idle H x x v v V L L H H Bank Precharge Any H x x v L x L L H L Precharge All Any H x x x H x L L H L Write Active (3) H x x v L v L H L L Write with Autoprecharge Active (3) H x x v H v L H L L Read Active (3) H x x v L v L H L H Read with Autoprecharge Active (3) H x x v H v L H L H Mode Register Set Idle H x x v v v L L L L No-Operation Any H x x x x x L H H H Active (4) H x x x x x L H H L Burst Stop Device Deselect Any H x x x x x H x x x Auto-Refresh Idle H H x x x x L L L H Self-Refresh Entry Idle H L x x x x L L L H Self Refresh Exit Clock suspend Mode Entry Power Down Mode Entry Clock Suspend Mode Exit idle L H x x x x H x x x (S.R) L H x x x x L H H x Active H L x x x x x x x x Idle H L x x x x H x x X Active (5) H L x x x x L H H H Active L H x x x x x x x X Any Power Down Mode Exit L H x x x x H x x X (power down) L H x x x x L H H H Data write/Output Enable Active H x L x x x x x x x Data Write/Output Disable Active x H x x x x x x x H Notes: (1) v = valid, x = Don't care, L = Low Level, H = High Level (2) CKEn signal is input leve l when commands are provided. (3) These are state of bank designated by BS0, BS1 signals. (4) Device state is full page burst operation. (5) Power Down Mode can not be entered in the burst cycle. When this command asserts in the burst cycle, device state is clock suspend mode. - 12 - W986416EH/W9864G6EH 8.1 Simplified State Diagram Self Refresh LF SE LF SE Mode Register Set MRS i ex t REF IDLE CBR Refresh CK E CK E ACT Power Down CKE Read Read READ Write WRITEA CKE CKE READA CKE CKE READ SUSPEND READA SUSPEND PR E(p rec har ge CKE term ina tion ) CKE Writ ew Au t o pr ith ech ar g e W rit e BS WRITEA SUSPEND WRITE CKE T CKE PRE ) tion ina term ge har rec E(p PR WRITE SUSPEND CKE d ea R ith dw Rea arge ech o pr Au t Write Active Power Down BS T ROW ACTIVE POWER ON Precharge Precharge Automatic sequence Manual input Notes: MRS = Mode Register Set REF = Refresh ACT = Active PRE = Precharge WRITEA = Write with Auto precharge READA = Read with Auto precharge - 13 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 9. ELECTRICAL CHARACTERISTICS 9.1 Absolute Maximum Rating PARAMETER SYM. RATING UNIT NOTES Input, Column Output Voltage VIN, VOUT -0.3 - VCC +0.3 V 1 Power Supply Voltage VCC, VCCQ -0.3 - 4.6 V 1 Operating Temperature(-5/-6/-7) TOPR 0 - 70 C 1 Storage Temperature TSTG -55 - 150 C 1 TSOLDER 260 C 1 PD 1 W 1 IOUT 50 mA 1 Soldering Temperature (10s) Power Dissipation Short Circuit Output Current Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. 9.2 Recommended DC Operating Conditions (TA = 0 to 70C for -5/-6/-7) PARAMETER SYM. MIN. TYP. MAX. UNIT NOTES Supply Voltage (Normal operation) VCC 3.0 3.3 3.6 V 2 Supply voltage (for -7) VCC 2.7 - 3.6 V 2 Supply Voltage for I/O Buffer VCCQ 3.0 3.3 3.6 V 2 Supply Voltage for I/O Buffer(for-7) VCCQ 2.7 - 3.6 V 2 Input High Voltage VIH 2.0 - VCC +0.3 V 2 Input Low Voltage VIL -0.3 - 0.8 V 2 UNIT Note: VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS VIL (min.) = VSS/VSSQ-1.2V for pulse width < 5 nS 9.3 Capacitance (VCC = 2.7V~3.6V, TA = 25 C, f = 1 MHz) PARAMETER SYM. MIN. MAX. Ci1 2.5 4 pf CCLK 2.5 4 pf Input/Output Capacitance (DQ0-DQ15) Co 4 6.5 pf Input Capacitance DQM Ci2 3.0 5.5 pf Input Capacitance (A0 to A11, BS0, BS1, CS , RAS , CAS , WE , , CKE) Input Capacitance (CLK) Note: These parameters are periodically sampled and not 100% tested - 14 - W986416EH/W9864G6EH 9.4 DC Characteristics (VCC = 2.7V~3.6V, TA = 0 to 70C for -5/-6/-7) PARAMETER SYM. -5 -6 -7 MAX. MAX. MAX. UNIT NOTES Operating Current tCK = min., tRC = min. 1 bank operation ICC1 105 90 80 3 tCK = min., CS = VIH VIH/L = VIH (min.)/VIL (max.) CKE = VIH ICC2 45 35 30 3 Bank: Inactive State CKE = VIL (Power Down mode) ICC2P 3 3 3 3 CLK = VIL, CS = VIH VIH/L=VIH (min.)/VIL (max.) CKE = VIH ICC2S 8 8 8 BANK: Inactive State CKE = VIL (Power Down mode) ICC2PS 3 3 3 No Operating Current CKE = VIH ICC3 70 60 55 ICC3P 15 15 15 ICC4 185 165 145 3, 4 ICC5 130 120 110 3 ICC6 3 3 3 Active precharge command cycling without burst operation Standby Current Standby Current tCK = min., CS = VIH (min.) BANK: Active State (4 banks) CKE = VIL (Power Down mode) Burst Operating Current (tCK = min.) Read/Write command cycling Auto Refresh Current (tCK = min.) Auto refresh command cycling Self Refresh Current Standard(-5/-6/-7) Self refresh mode (CKE = 0.2V) PARAMETER Input Leakage Current (0V VIN VCC, all other pins not under test = 0V) Output Leakage Current (Output disable, 0V VOUT VCCQ) LVTTL Output H Level Voltage (IOUT = -2 Ma) LVTTL Output "L Level Voltage (IOUT = 2 Ma) mA SYMBOL MIN. MAX. UNIT II(L) -5 5 A VO(L) -5 5 A VOH 2.4 - V VOL - 0.4 V - 15 - NOTES Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 9.5 AC Characteristics (VCC = 2.7V~3.6V, VSS = 0V,TA = 0 to 70C for -5/-6/-7) (Notes: 5, 6.) PARAMETER SYM. Ref/Active to Ref/Active Command Period -5 MIN. -6 MAX. MIN. -7 MAX. MAX. tRC 54 Active to precharge Command Period tRAS 40 Active to Read/Write Command Delay Time tRCD 14 18 20 Read/Write(a) to Read/Write(b) Command Period tCCD 1 1 1 tRP 14 18 20 tRRD 10 12 14 tWR 2 2 2 tCK 10 1000 10 1000 10 1000 5 1000 6 1000 7 1000 Precharge to Active(b) Command Period Active(a) to Active(b) Command Period Write Recovery Time CL* = 2 CL* = 3 CLK Cycle Time CL* = 2 CL* = 3 CLK High Level CLK Low Level Access Time from CLK CL* = 2 tCH 1.5 tCL 1.5 tAC 60 MIN. 10000 0 42 CL* = 3 65 100000 2 45 tCK nS tCK 6 5 tOH 1.5 Output Data High Impedance Time tHZ 1.5 Output Data Low Impedance Time tLZ 0 Power Down Mode Entry Time tSB 0 5.5 0 6 0 7 tT 0.5 1 0.5 1 0.5 1 Data-in-Set-up Time tDS 1.5 1.5 1.5 Data-in Hold Time tDH 1 0.7 1 Address Set-up Time tAS 1.5 1.5 1.5 Address Hold Time tAH 1 0.7 1 tCKS 1.5 1.5 1.5 Transition Time of CLK (Rise and Fall) CKE Set-up Time 2 5.5 Output Data Hold Time 5 2 2 6 0 2 tCKH 1 0.7 1 Command Set-up Time tCMS 1.5 1.5 1.5 Command Hold Time tCMH 1 Refresh Time tREF Mode Register Set Cycle Time tRSC 0.8 10 - 16 - nS 1 64 12 7 0 CKE Hold Time 64 nS 2 6 4.5 100000 2 2 6 UNIT 64 14 mS nS NOTE W986416EH/W9864G6EH Notes: (1) Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices. 2. All voltages are referenced to VSS 3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of Tck and Trc. 4. These parameters depend on the output loading conditions. Specified values are obtained with output open. 5. Power up Sequence (1) Power up must be performed in the following sequence. (2) Power must be applied to VCC and VCCQ (simultaneously) while all input signals are held in the "NOP" state. The CLK signals must be started at the same time. (3) After power-up a pause of at least 200 seconds is required. It is required that DQM and CKE signals then be held ` high` (VCC levels) to ensure that the DQ output is impedance. (4) All banks must be precharged. (5) The Mode Register Set command must be asserted to initialize the Mode Register. (6) A minimum of eight Auto Refresh dummy cycles is required to stabilize the internal circuitry of the device. 6. AC Testing Conditions PARAMETER CONDITIONS Output Reference Level 1.4V Output Load See diagram below Input Signal Levels (VIH/VIL) 2.4V/0.4V Transition Time (Rise and Fall) of Input Signal 1 Ns Input Reference Level 1.4V 1.4 V 50 ohms output Z = 50 ohms 30pF AC TEST LOAD 1. Transition times are measured between VIH and VIL. 2. Thz defines the time at which the outputs achieve the open circuit condition and is not referenced to output level. 3. These parameters account for the number of clock cycles and depend on the operating frequency of the clock, as follows the number of clock cycles = specified value of timing/ clock period (count fractions as whole number) (1) Tch is the pulse width of CLK measured from the positive edge to the negative edge referenced to VIH (min.). Tcl is the pulse width of CLK measured from the negative edge to the positive edge referenced to VIL (max.). - 17 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH (2) AC Latency Characteristics CKE to clock disable (CKE Latency) 1 DQM to output to HI-Z (Read DQM Latency) 2 DQM to output to HI-Z (Write DQM Latency) 0 Write command to input data (Write Data Latency) 0 CS to Command input ( CS Latency) 0 Precharge to DQ Hi-Z Lead time Precharge to Last Valid data out Bust Stop Command to DQ Hi-Z Lead time Bust Stop Command to Last Valid Data out Read with Auto-precharge Command to Active/Ref Command Write with Auto-precharge Command to Active/Ref Command - 18 - CL = 2 2 CL = 3 3 CL = 2 1 CL = 3 2 CL = 2 2 CL = 3 3 CL = 2 1 CL = 3 2 CL = 2 BL + tRP CL = 3 BL + tRP CL = 2 (BL+1) + tRP CL = 3 (BL+1) + tRP tCK tCK + nS W986416EH/W9864G6EH 10. TIMING WAVEFORMS 10.1 Command Input Timing tCL tCK CLK tCH VIH VIL tT tCMS tCMH tCMS tCMH tCMS tCMH tCMS tCMH tAS tAH tCMH tT tCMS CS RAS CAS WE A0-A10 BS0, 1 tCKS tCKH tCKS tCKH tCKS tCKH CKE - 19 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Timing Waveforms, continued 10.2 Read Timing Read CAS Latency CLK CS RAS CAS WE A0-A10 BS0, 1 tAC tAC tLZ tHZ tOH tOH Valid Data-Out Valid Data-Out DQ Read Command Burst Length - 20 - W986416EH/W9864G6EH Timing Waveforms, continued 10.3 Control Timing of Input Data (Word Mask) CLK tCMH tCMS tCMH tCMS DQM0 tCMH tCMS tCMH tDH tDS tDH tCMS DQM1 tDS tDH tDS Valid Data-in DQ0 -DQ7 tDS tDH Valid Data-in tDS Valid Data-in DQ8-DQ15 tDS tDH tDS tDH tDS tDH tDS tDH Valid Data-in tDH tDS tDH tDS Valid Data-in tDH tDH Valid Data-in tDS Valid Data-in tDS tDH Valid Data-in Valid Data-in Valid Data-in Valid Data-in DQ24-DQ31 tDS Valid Data-in Valid Data-in DQ16 -DQ23 tDH tDS tDH tDS Valid Data-in tDS Valid Data-in tDH tDH Valid Data-in tDS Valid Data-in tDH Valid Data-in *DQM2,3="L" (Clock Mask) CLK tCKH tCKS tDH tDS tCKH tCKS CKE tDS Valid Data-in DQ0 -DQ7 tDS tDS Valid Data-in DQ8 -DQ15 tDS tDH tDS tDH Valid Data-in tDS tDS tDH tDS tDS tDH tDH tDS tDH tDS tDH tDS tDH Valid Data-in - 21 - tDH Valid Data-in tDS Valid Data-in Valid Data-in tDH Valid Data-in Valid Data-in Valid Data-in tDS tDH Valid Data-in Valid Data-in Valid Data-in DQ16 -DQ23 DQ24 -DQ31 tDH tDH Valid Data-in tDH Valid Data-in tDS tDH Valid Data-in Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Timing Waveforms, continued 10.4 Control Timing of Output Data (Output Enable) CLK tCMH tCMS tCMH tCMS tCMH tCMS DQM0 tCMS tCMH DQM1 tAC tAC tOH tOH tHZ tOH Valid Data-Out DQ0 -DQ7 tAC tAC tOH tOH Valid Data-Out DQ8 -DQ15 tAC tAC tOH tOH tHZ Valid Data-Out DQ16 -DQ23 tAC tAC tOH tOH tHZ tOH Valid Data-Out tAC tOH Valid Data-Out tAC tAC Valid Data-Out tOH Valid Data-Out DQ24 -DQ31 OPEN tLZ Valid Data-Out tAC tLZ Valid Data-Out tOH Valid Data-Out tHZ tOH Valid Data-Out tAC tOH OPEN Valid Data-Out tAC tOH tAC tLZ tAC tOH Valid Data-Out Valid Data-Out *DQM2,3="L" (Clock Mask) CLK tCKH tCKS tCKH tCKS CKE tAC tOH tOH Valid Data-Out DQ0 -DQ7 tAC tOH tOH tAC tAC tOH tOH tOH tOH tOH Valid Data-Out tAC Valid Data-Out - 22 - tAC Valid Data-Out tOH Valid Data-Out tAC Valid Data-Out tAC tAC Valid Data-Out DQ16 -DQ23 tAC Valid Data-Out tOH tAC Valid Data-Out tAC Valid Data-Out tOH tOH Valid Data-Out tOH DQ8 -DQ15 DQ24 -DQ31 tAC tAC tOH tAC tOH tAC Valid Data-Out W986416EH/W9864G6EH Timing Waveforms, continued 10.5 Mode Register Set Cycle tRSC CLK tCMS tCMH tCMS tCMH tCMS tCMH tCMS tCMH CS RAS CAS WE tAS A0-A10 BS0,1 tAH Register set data A0 A1 Burst Length A2 A3 Addressing Mode A4 A5 CAS Latency A2 0 0 0 0 1 1 1 1 A6 A0 A7 "0" (Test Mode) A8 "0" Reserved WriteA0 Mode A0 A9 A10 "0" A11 A0 "0" BS0 "0" BS1 A0 "0" A0 Reserved A0 A0 A1 A0 0 A0 0 A0 1 A0 1 A0 0 A0 0 A0 1 A0 1 A0 0 1 0 1 0 1 0 1 A0 A3 A0 0 A0 1 A6 0 0 0 0 1 A0 A5 A0 0 A0 0 A0 1 A0 1 A0 0 A0 A9 A0 0 A0 1 - 23 - next command BurstA0 Length Sequential A0 Interleave A0 1 A0 1 A0 A0 2 2 A0 4 A0 4 A0 8 A0 8 A0 Reserved A0 Reserved FullA0 Page A0 Mode Addressing Sequential A0 Interleave A0 A4 0 1 0 1 0 CAS A0 Latency Reserved A0 Reserved A0 2 A0 3 Reserved Single Write Mode Burst read and A0 Burst write Burst read and A0 single write Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 11. OPERATING TIMING EXAMPLE 11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 1 0 2 3 4 6 5 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC tRC RAS tRAS tRC tRP tRAS tRAS tRP tRP tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9 RAa tRCD tRCD RBb CAw tRCD RAc CBx RBb RBd RAc CAy RAe RBd CBz RAe DQM CKE aw0 tRRD Bank #0 Active Bank #1 tAC tAC tAC DQ aw1 aw2 aw3 bx0 Precharge Active bx2 bx3 Active Bank #2 Idle Bank #3 - 24 - cy1 cy2 cy3 tRRD Precharge Read Precharge Read tAC cy0 tRRD tRRD Read bx1 Active Read Active W986416EH/W9864G6EH Operating Timing Example, continued 11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 11 10 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC tRC tRC RAS tRAS tRP tRAS tRP tRAS tRP tRAS CAS WE BS0 BS1 tRCD tRCD tRCD A10 RAa RBb A0-A9 RAa CAw RBb tRCD CBx RAe RBd RAc CAy RAc CBz RBd RAe DQM CKE tAC DQ tRRD Active Bank #0 Bank #1 Bank #2 tAC tAC aw0 aw1 aw2 aw3 bx0 bx1 tAC cy0 cy1 Read AP* cy2 cy3 dz0 tRRD Read Active AP* Active bx3 tRRD tRRD Read bx2 AP* Active Active Read Idle Bank #3 * AP is the internal precharge start timing - 25 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 CLK CS tRC RAS tRAS tRP tRAS tRP tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9 RAa tRCD tRCD RAc RBb CAx RBb CBy RAc CAz DQM CKE tAC DQ tAC ax0 ax1 tRRD Bank #0 Active Bank #2 ax3 ax4 ax5 ax6 tAC by0 by1 by4 by5 by6 by7 tRRD Read Precharge Bank #1 ax2 Precharge Active Read Idle Bank #3 - 26 - Active Read Precharge CZ0 22 23 W986416EH/W9864G6EH Operating Timing Example, continued 11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 6 5 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK tRC CS RAS tRAS tRP tRAS CAS WE BS0 BS1 tRCD A10 A0-A9 RBb RAa RAa tRCD tRCD CAx RAc RBb RAc CBy CAz DQM CKE tCAC tCAC DQ ax0 ax1 ax2 tRRD Bank #0 Active Bank #2 Bank #3 Idle ax4 ax5 ax6 ax7 by0 by1 by4 by5 by6 CZ0 tRRD AP* Read Active Bank #1 ax3 tCAC Active Read Read AP* * AP is the internal precharge start timing - 27 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.5 Interleaved Bank Write (Burst Length = 8) (CLK = 100 MHz) 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC RAS tRAS tRP tRAS CAS tRCD tRCD tRCD WE BS0 BS1 A10 RAa A0-A9 RAa RBb CAx RAc RBb CBy RAc CAz DQM CKE DQ ax0 ax1 ax4 ax5 ax6 ax7 by0 tRRD Bank #0 Active Bank #2 Bank #3 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2 tRRD Precharge Write Active Bank #1 by1 Write Idle - 28 - Active Write Precharge W986416EH/W9864G6EH Operating Timing Example, continued 11.6 Interleaved Bank Write (Burst Length = 8, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC RAS tRP tRAS tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9 RAa tRCD tRCD RBb CAx RAb CBy RBb CAz RAc DQM CKE DQ ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 tRRD Bank #0 Active by3 by4 by5 by6 by7 CZ0 CZ1 CZ2 tRRD AP* Write Active Bank #1 by2 Write Active Write AP* Bank #2 Idle Bank #3 * AP is the internal precharge start timing - 29 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 CLK tCCD tCCD tCCD CS tRAS tRAS RAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9 RAa tRCD RBb RBb CAI CBx CAy CAm CBz DQM CKE tAC DQ tAC tAC a0 a1 a2 a3 bx0 bx1 Ay0 tAC Ay1 Ay2 tAC am0 am1 am2 bz0 bz1 tRRD Bank #0 Active Active Bank #1 Bank #2 Bank #3 Read Read Read Read Precharge Read Idle * AP is the internal precharge start timing - 30 - AP* bz2 bz3 22 23 W986416EH/W9864G6EH Operating Timing Example, continued 11.8 Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRAS tRP RAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11 RAa CAx CAy DQM CKE tAC DQ tWR ax0 Q Q Bank #0 Active ax1 ax3 ax2 Q Q ax5 ax4 Q Q Read ay1 ay0 D D Write ay2 D ay4 ay3 D D Precharge Bank #1 Bank #2 Bank #3 Idle - 31 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.9 Autoprecharge Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) CLK 0 1 2 3 4 6 5 7 8 9 11 10 12 13 14 15 16 17 18 19 20 21 22 CS tRC RAS tRAS tRP tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9 RAa tRCD RAb CAw RAb CAx DQM CKE tAC DQ Bank #0 tAC aw0 Active Read aw1 AP* aw2 aw3 bx0 Active Read Bank #1 Bank #2 Bank #3 Idle * AP is the internal precharge start timing - 32 - bx1 AP* bx2 bx3 23 W986416EH/W9864G6EH Operating Timing Example, continued 11.10 Autoprecharge Write (Burst Length = 4) (CLK = 100 MHz) CLK 0 1 2 3 5 4 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CS tRC tRC RAS tRP tRAS tRAS tRP CAS WE BS0 BS1 tRCD tRCD A10 RAa A0-A9 RAa RAc RAb CAw RAb CAx RAc DQM CKE aw0 DQ Bank #0 Active Write aw1 aw2 bx0 aw3 AP* Active Write bx1 bx2 bx3 AP* Active Bank #1 Bank #2 Bank #3 Idle * AP is the internal precharge start - 33 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.11 Autorefresh Cycle (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK tRP tRC tRC CS RAS CAS WE BS0,1 A10 A0-A9 DQM CKE DQ All Banks Prechage Auto Refresh Auto Refresh (Arbitrary Cycle) - 34 - 21 22 23 W986416EH/W9864G6EH Operating Timing Example, continued 11.12 Self-refresh Cycle (CLK = 100 MHz) 0 1 2 3 4 6 5 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRP RAS CAS WE BS0,1 A10 A0-A9 DQM tCKS tCKS tSB CKE tCKS DQ tRC Self Refresh Cycle All Banks Precharge No Operation Cycle Self Refresh Entry Arbitrary Cycle - 35 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.13 Bust Read and Single Write (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 CLK CS RAS CAS tRCD WE BS0 BS1 A10 RBa A0-A9 RBa CBv CBw CBx CBy CBz DQM CKE tAC DQ av0 Q Bank #0 Bank #1 Bank #2 Bank #3 tAC Active Read av1 Q av3 av2 Q Q aw0 D ax0 D ay0 Single Write Idle - 36 - az1 az0 D Q Read Q az2 Q az3 Q 22 23 W986416EH/W9864G6EH Operating Timing Example, continued 11.14 Power-down Mode (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS RAS CAS WE BS A10 RAa A0-A9 RAa RAa CAa RAa CAx DQM tSB tSB CKE tCKS tCKS tCKS DQ ax0 Active NOP ax1 ax2 ax3 Precharge Read tCKS NOPActive Precharge Standby Power Down mode Active Standby Power Down mode Note: The PowerDown Mode is entered by asserting CKE "low". All Input/Output buffers (except CKE buffers) are turned off in the PowerDown mode. When CKE goes high, command input must be No operation at next CLK rising edge. - 37 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.15 Auto-precharge Timing (Write Cycle) 0 1 2 3 4 5 6 7 8 9 10 11 12 CLK (1) CAS Latency = 2 (a) burst length = 1 Command Write AP tWR DQ Act tRP D0 (b) burst length = 2 Command Write AP Act tWR DQ D0 tRP D1 (c) burst length = 4 Command AP Write DQ D0 D1 D2 Act tRP tWR D3 (d) burst length = 8 Command Write AP tWR DQ D0 D1 D2 D3 D4 D5 D6 Act tRP D7 (2) CAS Latency = 3 (a) burst length = 1 Command Write AP Act tWR DQ (b) burst length = 2 Command tRP D0 Write AP Act tWR DQ D0 tRP D1 (c) burst length = 4 Command Write AP Act tWR DQ D0 D1 D2 tRP D3 (d) burst length = 8 Command Write AP tWR DQ D0 D1 D2 D3 D4 D5 D6 D7 Note ) Write represents the Write with Auto precharge command. AP represents the start of internal precharing. Act represents the Bank Active command. When the /auto precharge command is asserted,the period from Bank Activate command to the start of intermal precgarging must be at least tRAS (min). - 38 - Act tRP W986416EH/W9864G6EH Operating Timing Example, continued 11.16 Auto-precharge Timing (Read Cycle) (1) CAS Latency=2 ( a ) burst length = 1 Command 0 1 Read AP 2 3 4 5 6 7 8 9 10 11 Act tRP Q0 DQ ( b ) burst length = 2 Command Read AP Q0 DQ Act tRP Q1 ( c ) burst length = 4 Command Read AP Act tRP DQ Q0 Q1 Q2 Q3 ( d ) burst length = 8 Command Read AP Q0 DQ Q1 Q2 Q3 Q4 Q5 Q6 Act tRP Q7 (2) CAS Latency=3 ( a ) burst length = 1 Command Read AP Q0 DQ ( b ) burst length = 2 Command Read AP Command Act tRP Q0 DQ ( c ) burst length = 4 Act tRP Read Q1 AP Act tRP Q0 DQ ( d ) burst length = 8 Command Q1 Q2 Q3 Read AP Q0 DQ Q1 Q2 Q3 Q4 Q5 Act tRP Q6 Q7 Note: Read AP Act represents the Read with Auto precharge command. represents the start of internal precharging. represents the Bank Activate command. When the Auto precharge command is asserted, the period from Bank Activate command to (min). the start of internal precgarging must be at least RAS t - 39 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.17 Timing Chart of Read to Write Cycle In the case of Burst Length = 4 0 1 2 Read Write 3 4 5 D1 D2 D3 D0 D1 D2 D1 D2 D3 D1 D2 6 (1) CAS Latency=2 ( a ) Command DQM DQ ( b ) Command D0 Read Write DQM DQ (2) CAS Latency=3 ( a ) Command Read D3 Write DQM D0 DQ ( b ) Command Read Write DQM DQ D0 D3 Note: The Output data must be masked by DQM to avoid I/O conflict. - 40 - 7 8 9 10 11 W986416EH/W9864G6EH Operating Timing Example, continued 11.18 Timing Chart of Write to Read Cycle In the case of Burst Length = 4 0 (1) CAS Latency = 2 ( a ) Command 1 2 Write Read 3 4 5 6 7 8 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 Q0 Q1 Q2 9 10 11 DQM DQ ( b ) Command D0 Read Write DQM DQ D0 D1 Write Read (2) CAS Latency = 3 ( a ) Command DQM DQ ( b ) Command D0 Write Read DQM DQ D0 D1 - 41 - Q3 Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) 0 1 2 3 4 5 6 7 8 (1) Read cycle ( a ) CAS latency =2 Command Read BST Q0 DQ Q1 Q2 Q3 Q4 ( b )CAS latency = 3 Command Read BST Q0 DQ Q1 Q2 Q3 Q4 (2) Write cycle Command DQ Write Q0 BST Q1 Q2 Note: Q3 BST Q4 represents the Burst stop command - 42 - 9 10 11 W986416EH/W9864G6EH Operating Timing Example, continued 11.20 Timing Chart of Burst Stop Cycle (Precharge Command) 0 1 2 3 4 5 6 7 8 9 10 11 (1) Read cycle (a) CAS latency =2 Command Read PRCG DQ (b) CAS latency =3 Command Q0 Q1 Q2 Read Q3 Q4 PRCG DQ Q0 Q1 Q2 Q3 Q4 (2) Write cycle (a) CAS latency =2 Command PRCG Write tWR DQM DQ (b) CAS latency =3 Command Q0 Q1 Q2 Q3 Q4 PRCG Write tWR DQM DQ Q0 Q1 Q2 Q3 Q4 - 43 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.21 CKE/DQM Input Timing (Write Cycle) CLK cycle No. 1 2 3 D1 D2 D3 4 5 6 7 External CLK Internal CKE DQM DQ D5 DQM MASK D6 CKE MASK (1) CLK cycle No. 1 2 3 D1 D2 D3 4 5 6 7 External CLK Internal CKE DQM DQ DQM MASK D5 D6 5 6 7 D4 D5 D6 CKE MASK (2) CLK cycle No. 1 2 3 D1 D2 D3 4 External CLK Internal CKE DQM DQ CKE MASK (3) - 44 - W986416EH/W9864G6EH Operating Timing Example, continued 11.22 CKE/DQM Input Timing (Read Cycle) CLK cycle No. 1 2 3 4 Q1 Q2 Q3 Q4 5 6 7 External CLK Internal CKE DQM DQ Q6 Open Open (1) CLK cycle No. 1 2 3 Q1 Q2 Q3 4 5 6 7 External CLK Internal CKE DQM DQ Q6 Q4 Open (2) CLK cycle No. 1 2 Q1 Q2 3 4 5 6 7 Q4 Q5 Q6 External CLK Internal CKE DQM DQ Q3 (3) - 45 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH Operating Timing Example, continued 11.23 Self Refresh/Power Down Mode Exit Timing Asynchronous Control Input Buffer turn on time (Power down mode exit time) is specified by t CKS (m in.) + t CK (min.) A ) t CK < t CKS (min.) + t CK (m in.) tC K CLK CKE tCKS(m in)+tCK(m in) NOP Com m and Command Input Buffer Enable B) tCK >= t CKS (min.) + t CK (min.) t CK CLK tCKS(m in)+tCK(m in) CKE Comm and Com m and Input Buffer Enable Note: All Input Buffer (Include CLK Buffer) are turned off in the Power Down mode and Self Refresh m ode NOP Command Represents the No-Operation comm and Represents one comm and - 46 - W986416EH/W9864G6EH 12. PACKAGE DIMENSIONS 12.1 54L TSOP (II)-400 mil 54 28 HE E 1 27 e b C D L A2 ZD A1 Y A L1 SEATING PLANE Controlling Dimension: Millimeters SYM. DIMENSION (MM) MIN. NOM. A A1 A2 b 0.05 0.10 DIMENSION (INCH) MAX. 1.20 0.15 MIN. 0.002 1.00 0.24 c 0.32 NOM. 0.004 MAX. 0.047 0.006 0.039 0.40 0.009 0.15 0.012 0.006 0.016 D 22.12 22.22 22.62 0.871 0.875 0.905 E 10.06 10.16 10.26 0.396 0.400 0.404 HE e 11.56 11.76 11.96 0.455 0.463 0.471 L 0.40 L1 0.80 0.50 0.60 0.016 0.80 0.020 0.024 0.032 0.004 0.10 Y ZD 0.0315 0.028 0.71 - 47 - Publication ReleaseMay 5, 2005 Revision A07 W986416EH/W9864G6EH 13. REVISION HISTORY VERSION DATE PAGE DESCRIPTION A01 8/22/2003 ALL A02 11/10/2003 15 A03 11/20/2003 1, 13 Icc2PS, Icc2P, Icc6 spec A04 12/04/2003 29, 33 Correct timing chart A05 05/07/2004 16 A06 02/03/2005 - A07 May 5, 2005 16 Formal Version Icc3p Adjust tCMH = 0.8 nS, tAH, tCKH, tDH = 0.7 nS Support voltage 2.7~3.6V for -7 Remove -6I and -7L spec Adjust CL2 SPEC Important Notice Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales. Headquarters Winbond Electronics Corporation America Winbond Electronics (Shanghai) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5665577 http://www.winbond.com.tw/ 2727 North First Street, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-5441798 27F, 2299 Yan An W. Rd. Shanghai, 200336 China TEL: 86-21-62365999 FAX: 86-21-62365998 Taipei Office Winbond Electronics Corporation Japan Winbond Electronics (H.K.) Ltd. 9F, No.480, Rueiguang Rd., Neihu District, Taipei, 114, Taiwan, R.O.C. TEL: 886-2-8177-7168 FAX: 886-2-8751-3579 7F Daini-ueno BLDG, 3-7-18 Shinyokohama Kohoku-ku, Yokohama, 222-0033 TEL: 81-45-4781881 FAX: 81-45-4781800 Unit 9-15, 22F, Millennium City, No. 378 Kwun Tong Rd., Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 Please note that all data and specifications are subject to change without notice. All the trade marks of products and companies mentioned in this data sheet belong to their respective owners. - 48 -