Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYV29F, BYV29X series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab k 1 VF 1.03 V a 2 IF(AV) = 9 A trr 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING SOD100 PIN SOD113 DESCRIPTION case 1 cathode (k) 2 anode (a) tab case isolated 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. BYV29F/BYV29X VRRM VR Peak repetitive reverse voltage Continuous reverse voltage IF(AV) Average forward current2 IFSM Non-repetitive peak forward current Tstg Tj Storage temperature Operating junction temperature Ths 138C1 square wave; = 0.5; Ths 90 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 -400 400 400 UNIT -500 500 500 V V - 9 A - 100 110 A A -40 - 150 150 C C 1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Peak isolation voltage from all terminals to external heatsink SOD100 package; R.H. 65%; clean and dustfree MIN. Visol Cisol TYP. MAX. UNIT - - 1500 V R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree - - 2500 V Capacitance from pin 2 to external heatsink - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.90 1.05 1.20 2.0 0.1 40 1.03 1.25 1.40 50 0.35 60 V V V A mA nC - 50 60 ns - 4.0 5.5 A - 2.5 - V f = 1 MHz THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air. Rth j-a ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s February 1999 2 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast I dI F BYV29F, BYV29X series 12 F dt Q I 95 1.9 2.2 8 rr 6 117 4 128 2 139 100% 10% s 106 2.8 4 rrm 0 0 2 4 IF(AV) / A 6 8 150 10 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.1. Definition of trr, Qs and Irrm I 84 a = 1.57 10 time R Ths(max) / C Vo = 0.89V Rs = 0.019 Ohms t I BYV29 PF / W trr / ns 1000 F IF=10 A 100 1A time VF 10 V Tj = 25 C Tj = 100C fr VF 1 1 Fig.2. Definition of Vfr 15 Fig.5. Maximum trr at Tj = 25C and 100C Ths(max) / C BYV29 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms 100 10 dIF/dt (A/us) time 10 67.5 Irrm / A D = 1.0 IF=10A 0.5 1 95 10 0.2 IF=1A 0.1 5 tp I D= T 0 0 5 IF(AV) / A 10 tp T 0.1 122.5 t 0.01 150 15 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D. February 1999 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25C and 100C. 3 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series BYW29 IF / A 30 10 Transient thermal impedance, Zth j-hs (K/W) Tj=150 C Tj=25 C 1 20 0.1 typ max 10 PD 0.01 0 0.5 0 1 VF / V 1.5 0.001 1us 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj 1000 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s Fig.9. Transient thermal impedance Zth j-hs= f(tp) Qs / nC IF = 10 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25C February 1999 4 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 a 0.9 0.7 M 0.55 max 1.3 5.08 top view Fig.10. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series MECHANICAL DATA Dimensions in mm 10.3 max 4.6 max Net Mass: 2 g 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 6 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 7 Rev 1.400