Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.03 V
• High thermal cycling performance
• Isolated mounting tab IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode (k)
2 anode (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29F/BYV29X -300 -400 -500
VRRM Peak repetitive reverse voltage - 300 400 500 V
VRContinuous reverse voltage Ths ≤ 138˚C1- 300 400 500 V
IF(AV) Average forward current2square wave; δ = 0.5; - 9 A
Ths ≤ 90 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C
TjOperating junction temperature - 150 ˚C
k a
12
12
case
12
case
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999 1 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance junction to in free air. - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
IRReverse current VR = VRRM - 2.0 50 µA
VR = VRRM; Tj = 100 ˚C - 0.1 0.35 mA
QsReverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/µs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
February 1999 2 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Qs100%
10%
time
dI
dtF
IR
IF
Irrm
trr
0246810
0
2
4
6
8
10
12 a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W Ths(max) / C
150
139
128
117
106
95
84
time
time
VF
Vfr
VF
IF
1
10
trr / ns
110
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0 5 10 15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
tptp
T
T
t
I
Ths(max) / C
150
122.5
95
67.5 10
1
0.1
0.01
Irrm / A
110 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
February 1999 3 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25˚C
Fig.9. Transient thermal impedance Z
th j-hs
= f(t
p
)
012
30
20
10
0
typ max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV29F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1
10
100
1000 Qs / nC
1.0 10 100
-dIF/dt (A/us)
IF = 10 A
2 A
February 1999 4 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M0.4
top view
3.5 max
not tinned 4.4
ka
February 1999 5 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
12
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max. 19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
February 1999 6 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999 7 Rev 1.400
