Si2301ADS
Vishay Siliconix
New Product
Document Number: 71835
S-20617—Rev. B, 29-Apr-02 www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)b
0.130 @ V GS = –4.5 V –2.0
–20 0.190 @ VGS = –2.5 V –1.6
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS –20
Gate-Source Voltage VGS "8V
_TA= 25_C –2.0 –1.75
Continuous Drain Current (TJ = 150_C)bTA= 70_CID–1.6 –1.4
Pulsed Drain CurrentaIDM –10 A
Continuous Source Current (Diode Conduction)bIS–0.75 –0.6
TA= 25_C 0.9 0.7
Power DissipationbTA= 70_CPD0.57 0.45 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb115 140
_
Maximum Junction-to-AmbientcRthJA 140 175 _C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the W orldwide Web: http://www.vishay.com/www/product/spice.htm
Si2301ADS
Vishay Siliconix New Product
www.vishay.com
2Document Number: 71835
S-20617—Rev. B, 29-Apr-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 mA–20
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA–0.45 –0.95 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
VDS = –16 V, VGS = 0 V –1
m
Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V, TJ = 55_C–10 mA
VDS v –5 V, VGS = –4.5 V –6
On-State Drain CurrentaID(on) VDS v –5 V, VGS = –2.5 V –3A
VGS = –4.5 V, ID = –2.8 A 0.093 0.130
W
Drain-Source On-ResistancearDS(on) VGS = –2.5 V, ID = –2.0 A 0.140 0.190 W
Forward Transconductanceagfs VDS = –5 V, ID = –2.8 A 6.5 S
Diode Forward Voltage VSD IS = –0.75 A, VGS = 0 V –0.80 –1.2 V
Dynamicb
Total Gate Charge Qg4.2 10
Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V
I
D
^ –2.8 A 0.8 nC
Gate-Drain Charge Qgd
ID
^
–2.8 A 0.8
Input Capacitance Ciss 500
Output Capacitance Coss VDS = –6 V, VGS = 0, f = 1 MHz 115 pF
Reverse Transfer Capacitance Crss 62
Switchingc
td(on) 6 25
Turn-On Time trVDD = –6 V, RL = 6 W
^
30 60
td(off) ID ^ –1.0 A, VGEN = –4.5 V
RG = 6 W25 70 ns
Turn-Off Time tf10 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
Si2301ADS
Vishay Siliconix
New Product
Document Number: 71835
S-20617—Rev. B, 29-Apr-02 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Output Characteristics Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
0
2
4
6
8
10
012345 0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = –55_C
125_C
0, 0.5, 1 V
2.5 V
VGS = 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
048121620
0.6
0.8
1.0
1.2
1.4
1.6
–50 –25 0 25 50 75 100 125 150
0
1
2
3
4
5
012345
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
Gate Charge
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 10 V
ID = 3.6 A
– On-Resistance (rDS(on) W)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
TJ – Junction Temperature (_C)
(Normalized)
– On-Resistance (rDS(on) W)
VGS = 2.5 V VGS = 4.5 V
25_C
Si2301ADS
Vishay Siliconix New Product
www.vishay.com
4Document Number: 71835
S-20617—Rev. B, 29-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TJ = 150_C
0
2
4
6
8
10
0.01 0.10 1.00 10.00 100.00 1000.00
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef fective Transient
Thermal Impedance
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)IS
TJ – Temperature (_C) Time (sec)
Power (W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
02468
–0.2
–0.1
0.0
0.1
0.2
0.3
0.4
–50 –25 0 25 50 75 100 125 150
ID = 3.6 A
ID = 250 mA
Variance (V)VGS(th)
10
0.001 0 0.2 0.4 0.6 0.8 1.0 1.2
2
1
0.1
0.01 10–410–310–210–11 10 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
0.01
0.1 TJ = 25_C
1
100
