S70FL01GS
1 Gbit (128 Mbyte) 3.0V SPI Flash
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 001-98295 Rev. *M Revised June 23, 2017
Features
CMOS 3.0V Core
Serial Peripheral Interface (SPI) with Multi-I/O
– SPI Clock polarity and phase modes 0 and 3
– Double Data Rate (DDR) option
– Extended Addressing: 32-bit address
– Serial Command set and footprint compatible with
S25FL-A, S25FL-K, and S25FL-P SPI families
– Multi I/O Command set and footprint compatible with
S25FL-P SPI family
READ Commands
– Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad
DDR
– AutoBoot – power up or reset and execute a Normal or
Quad read command automatically at a preselected
address
– Common Fla s h In te rfa c e (CF I) da ta for configurati o n
information
Programming (1.5 Mbytes/s)
– 512-byte Page Programming buffer
– Quad-Input Page Programming (QPP) for slow clock
systems
Erase (0.5 Mbytes/s)
– Uniform 256-kbyte sectors
Cycling Endurance
– 100,000 Program-Erase Cycles, minimum
Data Retention
– 20 Year Data Retention, minimum
Security Features
One Time Program (OTP) array of 2048 bytes
Block Protection
– Status Register bits to control protecti on against program
or erase of a contiguous range of sectors.
– Hardware and software control options
– Advanced Sector Protection (ASP)
– Individual sector protection controlled by boot code or
password
Cypress® 65 nm MirrorBit® Technology with Eclipse
Architecture
Core Supply Voltage: 2.7V to 3.6V
I/O Supply Voltage: 1.65V to 3.6V
Temperature Range / Grade:
– Industrial (40 °C to +85 °C)
– Industrial Plus (40 °C to +105 °C)
– Automot i v e, AE C-Q100 Grade 3 ( 40 °C to +85 °C)
– Automot i v e, AE C-Q100 Grade 2 ( 40 °C to +105 °C)
– Automot i v e, AE C-Q100 Grade 1 ( 40 °C to +125 °C)
Packages (all Pb-free)
– 16-lead SOIC (300 mils)
– BGA-24, 8 6 mm
–5 5 ball (ZSA024) footprint
General Description
This document contains information for the S70FL01GS device, which is a dual die stack of two S25FL512S die. For detai led
specifications, refer to th e discr ete die datasheet provided in the Affected Documents/Related Documents table.
Affected Documents/Rela ted Documents
Document Title Publication Number
S25FL512S 512 Mbit (64 Mbyte) 3.0V SPI Fla sh Memory Datasheet 001-98284
Document Number: 001-98295 Rev. *M Page 2 of 19
S70FL01GS
Contents
1. Block Diagram.............................................................. 3
2. Connection Diagrams.................................................. 4
3. Input/Output Summary................................................ 5
4. Device Operations ....................................................... 6
4.1 Programming ................................................................. 6
4.2 Simultaneous Die Operation.......................................... 6
4.3 Sequential Reads........................................................... 6
4.4 Sector/Bulk Erase.......................................................... 6
4.5 Status Registers............................................................. 6
4.6 Configuration Register................................................... 6
4.7 Bank Address Register................ .............. ... .. ............... 6
4.8 Security and DDR Registers.......................................... 6
4.9 Block Protection................ .. .............. ... ... .............. ... ...... 6
5. Read Identification (RDID)........................................... 7
6. RESET#......................................................................... 7
7. Versatile I/O Power Supply (VIO)................................. 7
8. DC Characteristics....................................................... 8
9. AC Test Conditions...................................................... 9
10. SDR AC Characteristics ............................................. 10
10.1 DDR AC Characteristics............................................... 11
10.2 Capacitance Characteristics......................................... 11
11. Ordering Information.................................................. 12
11.1 Valid Combinations — Standard................................... 13
11.2 Valid Combinatio ns — Automotive Grade /
AEC-Q100 .................................................................... 13
12. Other Resources......................................................... 14
12.1 Cypress Flash Memory Roadmap ................................ 14
12.2 Links to Software.......................................................... 14
12.3 Links to Application Notes............................................. 14
13. Physical Diagram........................................................ 15
13.1 SOIC 16 Lead, 300-mil Body Width.............................. 15
13.2 24-Ball BGA 8 x 6 mm (ZSA024 ).................................. 16
14. Revision History.......................................................... 17
Sales, Solutions, and Legal Information .......................... 19
Worldwide Sales and Design Support ...........................19
Products ........................................................................ 19
PSoC® Solutions ..........................................................19
Cypress Developer Community .....................................19
Technical Support .........................................................19
Document Number: 001-98295 Rev. *M Page 3 of 19
S70FL01GS
1. Block Diagram
SI/IO0 SI/IO0
WP#/IO2 WP#/IO2
SO/IO1
HOLD#/IO3 HOLD#/IO3
VSS VSS
SCK SCK
CS#1 CS# VCC VCC
SI/IO0
WP#/IO2
HOLD#/IO3
VSS
SCK
CS#2 CS#
VCC
SO/IO1
SO/IO1
FL512S
Flash
Memory
FL512S
Flash
Memory
Document Number: 001-98295 Rev. *M Page 4 of 19
S70FL01GS
2. Connection Diagrams
Figure 1. 16-Pin Plastic Small Outline Package (SO)
Figure 2. 24-Ball BGA, 5 x 5 Ball Footprint (ZSA024), Top View
Note:
1. VIO is not supported in the S70FL01GS device and is RFU. Refer to Section 7. for more details.
1
2
3
4
16
15
14
13
HOLD#/IO3
VCC
RESET#
DNU NC
VIO/RFU
SI/IO0
SCK
5
6
7
8
12
11
10
9WP#/IO2
VSS
DNU
DNU
DNU
CS2#
CS1#
SO/IO1
32541
CS2#DNU RFURESET#
B
D
E
A
C
VSSSCK RFUVCCDNU
RFUCS1# RFUWP#/IO2DNU
SI/IO0SO/IO1 DNUHOLD#/IO3DNU
DNUDNU DNUVIO/RFUDNU
Document Number: 001-98295 Rev. *M Page 5 of 19
S70FL01GS
3. Input/Output Summary
Table 2. Signal List
Signal Name Type Description
RESET# Input Hardware Reset: Low = device resets and returns to standby state, ready to receive a
command. The signal has an internal pull-up resistor and may be left unconnected in th e host
system if not used.
SCK Input Serial Clock.
CS1# Input Chip Select. FL512S #1.
CS2# Input Chip Select. FL512S #2.
SI / IO0 I/O Serial Input for single bit data co mma nd s or IO 0 fo r Du al or Qu a d comma nd s.
SO / IO1 I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands.
WP# / IO2 I/O Wri te Protect when not in Quad mode. IO2 in Quad mode. The signal has an internal pull-up
resistor and may be left unconnected in the host system if not used for Quad commands.
HOLD# / IO3 I/O Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O mode. The
signal has an internal pull-up resistor and may be left unconnected in the host system if not used
for Quad commands.
VCC Supply Core Power Supply.
VIO Supply Versatile I/O Power Supply. Note: VIO is not supported in the S70FL01GS device. Refer to
Section 7. for more details.
VSS Supply Ground.
NC Unused
Not Connected. No device internal signal is connected to the package connector nor is there
any future plan to use the connector for a signal. The connection may safely be used for routing
space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC
must not have voltage levels higher than VCC.
RFU Reserved
Reserved for Future Use. No device internal signal is currently connected to the package
connector but there is potential future use of the connector for a signal. It is recommended to not
use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices .
DNU Reserved
Do Not Use. A device internal signal may be connected to the package connector. The
connection may be used by Cypress for test or other purposes and is not intended for connection
to any host system signal. Any DNU signal related function will be inactive when the signal is at
VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system
or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not
connect any host system signal to this connection.
Document Number: 001-98295 Rev. *M Page 6 of 19
S70FL01GS
4. Device Operations
4.1 Programming
Each Flash die must be programmed independently due to the natu re of the dual die stack.
4.2 Simultaneous Die Operation
The user may only access one Flash die of the dual die stack at a time via its respective Chip Select.
4.3 Sequential Reads
Sequential reads are not supported across the end of the first Flash die to the beginning of the second. If the user desire s to
sequentially read across the two die, data must be read out of the first die via CS1# and then read out of the second die via CS2#.
4.4 Sector/Bulk Erase
A sector erase command must be issued for sectors in each Flash die separa tely. Full device Bulk Erase via a single command is
not supported due to the nature of the dual die stack. A Bulk Erase command must be issued for each die.
4.5 Status Registers
Each Flash die of the dual die stack is managed by its own Status Registers. Reads and updates to the Status Registers must be
managed separately. It is recommended that Status Register control bit settings of each die are kept identical to maintain
consistency when switching between die.
4.6 Configuration Register
Each Flash die of the dual die stack is managed by its own Configuration Register. Updates to the Configuration Register control bits
must be managed separately. It is recommended that Configuration Register control bit settings of each die are kept identical to
maintain consistency when switching between die.
4.7 Bank Address Register
It is recommended that the Bank Address Register bit settings of each die are kept identical to maintain consistency when switching
between die.
4.8 Security and DDR Registers
It is recommended that the bit settings for ASP Register, Password Register, PPB Lock Register, PPB Access Register, DYB
Access Register, and DDR Data Learning Register in each die are kept identical to maintain consistency when switching between
die.
4.9 Block Protection
Each Flash die of the dual die stack will maintain its own Block Protection. Updates to the TBPROT and BPNV bits of each die must
be managed separately. By default, each die is configured to be protected starting at the top (highest address) of each array, but no
address range is protected. It is recommended th at the Block Protection settings of each die are kept identical to maintain
consistency when switching between die. In addition, any update to the FREEZE bit must be managed separately for each die. If the
FREEZE bit is set to a logic 1, it cannot be cleared to a logic 0 until a power-on-reset is executed on each die that has the FREEZE
bit set to 1.
Document Number: 001-98295 Rev. *M Page 7 of 19
S70FL01GS
5. Read Identification (RDID)
The Read Identification (RDID) command outputs the one-byte manufacturer identification, followed by the two-byte device
identification and the bytes for the Common Flash Interface (CFI) tables. Each die of the FL01GS dual die stack will have identical
identification data as the FL512S die, with the exception of the CFI data at byte 27h, as shown in Table 3.
6. RESET#
Note that the hardware RESET# input (pin 3 on the 16-pin SO package and ball A4 on the 5x5 BGA package) is bond ed out and
active for the S70FL01GS device. For applications that do NOT require use of the RESET# pin, it is recommended to not use
RESET# for PCB routing channels that would cause the RESET# signal to be asserted Low (VIL). Doing so will cause the device to
reset to standby state. The RESET# signal has an in ternal pull-up resistor and may be left unconnected in the host system if not
used.
7. Versatile I/O Power Supply (VIO)
Note that the Versatile I/O (VIO) power supply (pin 14 on the 16-pin SO package and ball E4 on the 5x5 BGA package) is not
supported, and pin 14 and ball E4 are RFU (Reserved for Future Use) in the standard configuration of the S70FL01GS device.
Contact your local sales office to confirm availability with the VIO feature enabled.
Table 3. Product Group CFI Device Geometry Defin ition
Byte Data Description
27h 1Bh Device Size = 2N byte
Document Number: 001-98295 Rev. *M Page 8 of 19
S70FL01GS
8. DC Characteristics
This section summarizes the DC Characteristics of the device.
Notes:
1. Typical values are at TAI = 25°C and VCC = 3V.
2. Output switching current is not included.
3. Bulk Erase current is for both die erasing simultaneously.
Table 4. DC Characteristics
Symbol Parameter Test Conditions Min Typ (1) Max Unit
VIL Input Low Voltage -0.5 0.2 x VCC V
VIH Input High Voltage 0.7 x VCC V
CC + 0.4 V
VOL Output Low Voltage IOL = 1.6 mA, VCC = VCC min  0.15 x VCC V
VOH Output High Voltage IOH = –0.1 mA 0.8 5 x VCC V
ILI Input Leakage Current VCC = VCC Max, VIN = VIH or VIL ±4 µA
ILO Output Leakage Current VCC = VCC Max, VIN = VIH or VIL ±4 µA
ICC1 Active Power Supply
Current (READ)
Serial SDR @ 50 MHz
Serial SDR @ 133 MHz
Quad SDR @ 80 MHz
Quad SDR @ 104 MHz
Quad DDR @ 66 MHz
Quad DDR @ 80 MHz
Outputs unconnected during read data
return (2)
18
36
50
61
75
90
mA
ICC2 Active Power Supply
Current (Page Program) CS# = VCC 100 mA
ICC3 Active Power Supply
Current (WRR) CS# = VCC 100 mA
ICC4 Active Power Supply
Current (SE) CS# = VCC 100 mA
ICC5 Active Power Supply
Current (BE) (3) CS# = VCC 200 mA
ISB (Industrial) Standby Current RESET#, CS# = VCC; SI, SCK = VCC or
VSS, Industrial Temp 140 200 µA
ISB (Industrial Plus) Standby Current RESET#, CS# = VCC; SI, SCK = VCC or
VSS, Industrial Plus Temp 140 600 µA
Document Number: 001-98295 Rev. *M Page 9 of 19
S70FL01GS
9. AC Test Conditions
Figure 3. Input, Output, and Timing Reference Levels
Figure 4. Test Setup
Notes:
1. Output High-Z is defined as the point where data is no longer driven.
2. Input slew rate: 1.5 V/ns.
3. AC characteristics tables assu me clock and data signals have the same slew rate (slope).
4. DDR Operation.
Table 5. AC Measurement Conditions
Symbol Parameter Min Max Unit
CLLoad Capacitance 30
15 (4) pF
Input Rise and Fall Times 2.4 ns
Input Pulse Voltage 0.2 x VCC to 0.8 VCC V
Input Timing Ref Voltage 0.5 VCC V
Output Timing Ref Voltage 0.5 VCC V
VCC
+ 0.4V
0.7 x VCC
0.2 x VCC
- 0.5V
Timing Reference Level
0.5 x VCC
0.85 x VCC
0.15 x VCC
Input Levels Output Levels
Device
Under
Test
CL
Document Number: 001-98295 Rev. *M Page 10 of 19
S70FL01GS
10. SDR AC Characteristics
Notes:
1. Only applicable as a constraint for WRR i nstruction when SRWD is set to a 1.
2. Full VCC range (2.7 - 3.6V) and CL = 30 pF.
3. Regulated VCC range (3.0 - 3.6V) and CL = 30 pF.
4. Regulated VCC range (3.0 - 3.6V) and CL = 15 pF.
5. ±10% duty cycle is supported for frequencies
50 MHz.
6. Maximum value only applies during Program/E rase Suspend/Resume commands.
7. When switching between die, a minimum time of tCS must be kept between the rising edge of one chip select and the falling edge of the other for operations and data
to be valid.
Table 6. SDR AC Characteristics (Single Die Package, VCC = 2.7V to 3.6V)
Symbol Parameter Min Typ Max Unit
FSCK, R SCK Clock Frequency for READ and 4READ instructions DC 50 MHz
FSCK, C SCK Clock Frequency for single commands (4) DC 133 MHz
FSCK, C SCK Clock Frequency for the following dual and quad commands:
DOR, 4DOR, QOR, 4QOR, DIOR, 4DIOR, QIOR, 4QIOR DC 104 MHz
FSCK, QPP SCK Clock Frequency for the QPP, 4QPP commands DC 80 MHz
PSCK SCK Clock Period 1/ FSCK
tWH, tCH Clock High Time (5) 45% PSCK ns
tWL, tCL Clock Low Time (5) 45% PSCK ns
tCRT, tCLCH Clock Rise Time (slew rate) 0.1 V/ns
tCFT, tCHCL Clock Fall Time (slew rate) 0.1 V/ns
tCS (7) CS# High Time (Read Instructions)
CS# High Time (Program/Erase) 10
50 ns
tCSS CS# Active Setup Time (relative to SCK) 3 ns
tCSH CS# Active Hold Time (relative to SCK) 3 3000 (6) ns
tSU Data in Setup Time 1.5 ns
tHD Data in Hold Time 2 ns
tV Clock Low to Output Valid 8.0 (2)
7.65 (3)
6.5 (4) ns
tHO Output Hold Time 2 ns
tDIS Output Disable Time 0 8 ns
tWPS WP# Setup Time 20 (1) ns
tWPH WP# Hold Time 100 (1) ns
tHLCH HOLD# Active Setup Time (relative to SCK) 3 ns
tCHHH HOLD# Active Hold Time (relative to SCK) 3 ns
tHHCH HOLD# Non-Active Setup Time (relative to SCK) 3 ns
tCHHL HOLD# Non-Active Hold Time (relative to SCK) 3 ns
tHZ HOLD# Enable to Output Invalid 8 ns
tLZ HOLD# Disable to Output Valid 8 ns
Document Number: 001-98295 Rev. *M Page 11 of 19
S70FL01GS
10.1 DDR AC Characteristics
Notes:
1. Regulated VCC range (3.0 - 3.6V) and CL =15 pF.
2. Maximum value only applies during Program/E rase Suspend/Resume commands.
10.2 Capacitance Characteristics
Note:
1. For more information on capacitance, please consult the IBIS models.
Table 7. DDR AC Characteristics 66 MHz and 80 MHz Operatio n
Symbol Parameter 66 MHz 80 MHz Unit
Min Typ Max Min Typ Max
FSCK, R SCK Clock Frequency for DDR
READ instruction DC 66 DC 80 MHz
PSCK, R SCK Clock Period for DDR
READ instruction 15 12.5 ns
tWH, tCH Clock High Time 45% PSCK 45% PSCK ns
tWL, tCL Clock Low Time 45% PSCK 45% PSCK ns
tCS CS# High Time (Read
Instructions) 10 10 ns
tCSS CS# Active Setup T ime (relative
to SCK) 3 3 ns
tCSH CS# Active Hold Time (relative
to SCK) 3 3 ns
tSU IO in Setup Time 2 3000 (2) 1.5 3000 (2) ns
tHD IO in Hold Time 2 1.5 ns
tVClock Low to Output Valid 0 6.5 (1) 6.5 (1) ns
tHO Output Hold Time 1.5 1.5 ns
tDIS Output Disa b le Time 8 8 ns
tLZ Clock to Output Low
Impedance 0 8 0 8 ns
tIO_skew First IO to last IO data valid
time 600 600 ps
Table 8. Capa citance
Parameter Test Conditions Min Max Unit
CIN Input Capacitance (applies to SCK, CS#1, CS#2, RESET#) 1 MHz 16 pF
COUT Output Capacitance (applies to All I/O) 1 MHz 16 pF
Document Number: 001-98295 Rev. *M Page 12 of 19
S70FL01GS
11. Ordering Information
The ordering part number is formed by a valid combination of the follo wing:
Notes:
1. EHPLC = Enhanced High Performance Latency Code ta ble.
2. Uniform 256-kB sectors = All sectors are uniform 256-kB with a 512B programming buffer.
S70FL 01G S AG M F I 0 1 1 Packing Type (Note 1)
0 = Tray
1 = Tube
3 = 13” Tape and Reel
Model Number (Sector Type)
1 = Uniform 256-kB sectors
Model Number
(Latency Type, Package Details, RESET# support)
0 = EHPLC, SO footprint
C = EHPLC, 5 x 5 ball BGA footprint with RESET#
Temperature Range / Grade
I = Industrial (-40°C to + 85°C)
V = Industrial Plus (-40°C to +105°C)
A = Aut omotive, AEC-Q100 Grade 3 (-40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
M = Automotive, AEC-Q100 Grade 1(-40°C to +125°C)
Package Materials
F = Lead (Pb)-free
H = Low-Halogen, Lead (Pb)-free
Package Type
B = 24-ball BGA 8 x 6 mm package, 1.00 mm pitch
M = 16-pin SO package
Speed
AG = 133 MHz
DP = 66 MHz DDR
DS = 80 MHz DDR
Device Technology
S = 65 nm MirrorBit Process Technology
Density
01G = 1 Gbit
Device Family
S70FL
Cypress Stacked Memory 3.0V-Only, Serial Peripheral Interface (SPI) Flash Memory
Document Number: 001-98295 Rev. *M Page 13 of 19
S70FL01GS
11.1 Valid Combinations — Standard
Table 9 lists the valid combinations configurations pla nned to be supported in volume for this device.
Note:
1. Package Marking omits the leading “S70” and package type.
11.2 Valid Combinations — Automotive Grade / AEC-Q100
Table 10 lists configurations that are Automotive Gra de / AEC-Q100 qualifie d and are planned to be available in volume. The table
will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only prov ided for AEC-Q100 grade products.
Products to be used in end-use applicati ons that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP supp ort for end-use applications that do not require ISO/TS-16949
compliance.
Note:
1. Package Marking omits the leading “S70” and package type.
Table 9. S70FL01GS Valid Combinations — Standar d
S70FL01GS Valid Combinations
Package Markin g (1)
Base Ordering
Part Number Speed
Option Package and
Temperature Model
Number Packing Type
S70FL01GS
AG MFI, MFV 01 0, 1, 3 FL01GS + A + (temp) + F + (Model Number)
DP FL01GS + D + (temp) + F + (Model Number)
DS FL01GS + S + (temp) + F + (Model Number)
AG BHI, BHV C1 0, 3 FL01GS + A + (temp) + H + (Model Number)
DP FL01GS + D + (temp) + H + (Model Number)
DS FL01GS + S + (temp) + H + (Model Number)
Table 10. S70F L01GS Valid Combinations — Automotive Grade / AEC-Q100
S70FL01GS Valid Combinations
Package Markin g (1)
Base Ordering
Part Number Speed
Option Package and
Temperature Model
Number Packing Type
S70FL01GS
AG MFA, MFB,
MFM 01 0, 1, 3 FL01GS + A + (temp) + F + (Model Number)
DS FL01GS + S + (temp) + F + (Model Number)
AG BHA, BHB,
BHM C1 0, 3 FL01GS + A + (temp) + H + (Model Number)
DS FL01GS + S + (temp) + H + (Model Number)
Document Number: 001-98295 Rev. *M Page 14 of 19
S70FL01GS
12. Other Resources
12.1 Cypress Flash Memory Roadmap
www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap
12.2 Links to Software
www.cypress.com/software-and-drivers-cypress-flash-memory
12.3 Links to Application Notes
www.cypress.com/appnotes
Document Number: 001-98295 Rev. *M Page 15 of 19
S70FL01GS
13. Physical Diagram
13.1 SOIC 16 Lead, 300-mil Body Width
SHEET OF
REVSPEC NO.
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
CYPRESS
TITLE
SCALE :
Company Confidential
PACKAGE
CODE(S)
DRAWN BY
APPROVED BY
DATE
DATE
0.33 C
0.25 M DCA-B
0.20 C A-B
0.10 C
0.10 C
0.10 C D
2X
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
1. ALL DIMENSIONS ARE IN MILLIMETERS.
NOTES:
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
LOWER RADIUS OF THE LEAD FOOT.
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
h
0
D
L2
N
e
A1
b
c
E
E1
A
0.75
10.30 BSC
1.27 BSC
0.30
10.30 BSC
0.33
0°
0.25
16
0.20
7.50 BSC
0.10
0.31
8°
0.51
2.65
2.35
A2 2.05 2.55
b1 0.27 0.48
0.30
0.20
c1
L1
0.40
L1.27
1.40 REF
0.25 BSC
05° 15°
00°
1
2-
DIMENSIONS
SYMBOL MIN. NOM. MAX.
-
-
-
-
-
-
-
-
-
-
-
-
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
0.25 mm FROM THE LEAD TIP.
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
THE PLASTIC BODY.
PACKAGE LENGTH.
SEATING PLANE.
SO3016 KOTA
BESY
24-OCT-16
24-OCT-16
*A
002-15547
PACKAGE OUTLINE, 16 LEAD SOIC
12
TO FIT
10.30X7.50X2.65 MM SO3016/SL3016/SS3016
SL3016 SS3016
Document Number: 001-98295 Rev. *M Page 16 of 19
S70FL01GS
13.2 24-Ball BGA 8 x 6 mm (ZSA024)
Document Number: 001-98295 Rev. *M Page 17 of 19
S70FL01GS
14. Revision History
Document Title: S70FL01GS, 1 Gbit (128 Mbyte) 3.0V SPI Flash
Document Number: 001-98295
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
** BWHA 11/06/2012 Initial release
*A BWHA 04/25/2013 Global: Datasheet designation updated from Advance Information to Preliminary
DC Characteristics: DC Charac teristics table: changed Max value of ILI, ILO,
ICC1, and ISB
*B BWHA 05/16/2013 SOIC 16 Physical Diagram: Updated package nomencl ature from S03016 to
SL3016
*C BWHA 08/22/2013 Valid Combin ations: Valid Combinations table: added MFV
DC Characteristics: DC Characteristics table: add ed ISB (Automotive)
*D BWHA 11/08/2013 Global: Datasheet designation updated from Preliminary to Full Production
*E BWHA 03/19/2014
Features: Packages (all Pb-free): added BGA-24, 8 x 6 mm
Connections Diagrams: Added figure: 24-Ball BGA, 5 x 5 Ball Footprint (FAB024),
Top View
Ordering Information: Added options to: Model Number, Package Materials,
Package Type, and Speed
Valid Combinations: Added option to S70FL01GS Valid Combinations Table
SDR AC Characteristics: SDR AC Characteristics (Single Die Package, VCC =
2.7V to 3.6V) table: updated tv Min
DDR AC Characteristics:Updated DDR AC Characteristics 66 MHz Operation
table
Capacitance Characteristics: Capacitance table: updated Max values and
removed note
*F BWHA 11/07/2014 Valid Combin ations: Added DP Speed Option for BGA 5x5 package
*G BWHA 04/21/2015 Valid Combinations: Ad ded BHV option
*H 4871631 BWHA 08/24/2015 Updated to Cypress template.
Changed Automotive Temperature Range to Industrial Plus Temperature Range
in Features and Section 4.
*I 5123878 BWHA 02/03/2016 Updated General Description.
*J 5536564 BWHA 12/02/2016
Updated Features on page 1: Added Extended and Automotive Grade
temperatures.
Updated DDR AC Characteristics 66 MHz and 80 MHz Operation on page 11
table: Corrected tHO Min value, tCSH and tSU Max value.
Ordering Information on page 12: Added Extended and Automotive Grade.
Added Other Resources on page 14.
*K 5612027 ECAO 01/17/2017
Added ICC1 value for Quad DDR @ 80 MHz in Table 4, DC Characteristics
on page 8
Updated ICC5 value in Table 4, DC Characteristics on page 8
Updated DDR AC Characteristics 66 MHz and 80 MHz Operation on page 11
Removed Extended (-40°C to +125°C) temperature option in Ordering Infor-
mation
Updated Physical Diagram:
Updated package name and drawing from SL3016 to SS3016.
Updated package name and drawing from FAB024 to ZSA024.
Document Number: 001-98295 Rev. *M Page 18 of 19
S70FL01GS
*L 5669602 ECAO 04/05/2017
Updated Figure 2, 24-Ball BGA, 5 x 5 Ball Footprint (ZSA024), Top View
on page 4.
Removed SS3016 from Section 13.1, SOIC 16 Lead, 300-mil Body Width
on page 15.
Removed CS# fro m Table 2, Signal List on page 5.
Updated tSU in Table 6, SDR AC Characteristics (Single Die Package, VCC =
2.7V to 3.6V) on page 10.
Updated Cypress logo.
Updated Sales page.
*M 5783913 ECAO 06/23/2017 Changed OTP total space in Security Features.
Updated ISB values in Table 4.
Document Title: S70FL01GS, 1 Gbit (128 Mbyte) 3.0V SPI Flash
Document Number: 001-98295
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 001-98295 Rev. *M Revised June 23, 2017 Page 19 of 19
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