ES3A - ES3J Fast Rectifiers Features * * * * * * For surface mount applications. Glass passivated junction. Low profile package. Easy pick and place. Built-in strain relief. Superfast recovery times for high efficiency. Absolute Maximum Ratings * Symbol SMC/DO-214AB COLOR BAND DENOTES CATHODE Ta = 25C unless otherwise noted Value Parameter ES3A ES3B ES3C ES3D ES3J 50 100 150 200 600 Units VRRM Maximum Repetitive Reverse Voltage V IF(AV) Average Rectified Forward Current, .375" lead length @ Ta = 75C 3.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 100 A TJ, TSTG Operating Junction and Storage Temperature Range -50 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RJA Parameter Value Power Dissipation 1.66 W 47 C/W 12 C/W Thermal Resistance, Junction to Ambient * Thermal Resistance, Junction to Lead * RJL * Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Units Ta = 25C unless otherwise noted Value Parameter ES3A ES3B ES3C ES3D ES3J @ IF = 3.0 A Units VF Maximum Forward Voltage Trr Reverse Recovery Time Typ. IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Max. IR Maximum Reverse Current @ rated VR Ta = 25C Ta = 100C 10 500 A A CT Total Capacitance 45 pF VR = 4.0 V, f = 1.0 MHz (c) 2012 Fairchild Semiconductor Corporation ES3A - ES3J Rev. F2 0.95 1.7 V 20 35 ns 30 45 ns www.fairchildsemi.com 1 ES3A - ES3J -- Fast Rectifiers April 2012 ES3A - ES3J -- Fast Rectifiers 100 3.5 3 Forward Current, IF[A] Average Rectified Forward Current, IF [A] Typical Performance Characteristics 2.5 2 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 1.5 1 0.5 0 0 25 ES3A-ES3D 10 ES3J 1 0.1 o TA=25 C Pulse Width = 300us 2% Duty Cycle 50 75 100 125 Ambient Temperature [C] 150 0.01 0.4 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage Drop, VF[V] Figure 1. Foward Current Deration Curve Figure 2. Foward Voltage Characteristics 1000 100 T A = 100 C 80 100 70 Reverse Current, IR [uA] Total Capacitance, C T [pF] 90 60 50 40 30 20 10 0 0.1 0.5 1 5 10 20 50 100 Reverse Voltage, V R [V] 1 0.1 500 Figure 3. Total Capacitance 50 NONINDUCTIVE T A = 75 C 10 T A = 25 C 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage 50 NONINDUCTIVE +0.5A trr (-) DUT 0 Pulse Generator (Note 2) 50V (approx) 50 NONINDUCTIVE -0.25A (+) OSCILLOSCOPE (Note 1) -1.0A NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram (c) 2012 Fairchild Semiconductor Corporation ES3A - ES3J Rev. F2 www.fairchildsemi.com 2 ES3A - ES3J -- Fast Rectifiers Package Dimensions SMC / DO - 214AB Dimensions in Inches(Millimeters) (c) 2012 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 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