16 GHz to 32 GHz, Tunable
Band-Pass Filter
Data Sheet ADMV8432
Rev. 0 Document Feedback
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Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Amplitude settling time: 200 ns typical
Wideband rejection: ≥30 dB
Single chip implementation
40-lead, 6 mm × 6 mm, RoHS compliant LFCSP
APPLICATIONS
Test and measurement equipment
Military radar and electronic warfare (EW) systems
Video satellite (VSAT) communications
FUNCTIONAL BLOCK DIAGRAM
GND
RFOUT
GND
GND
RFIN
GND
LOW BAND
HIGH BAND
LEVEL SHIFTER
VEE GND GND GNDVDD VCTL VTUNE
ADMV8432
20804-001
Figure 1.
GENERAL DESCRIPTION
The ADMV8432 is a monolithic microwave integrated circuit
(MMIC), tunable band-pass filter that features a user selectable
pass-band frequency. The 3 dB filter bandwidth is >17% of the
center frequency (fCENTER). Additionally, fCENTER can be varied
between 16.5 GHz to 29.5 GHz by applying an analog tuning
voltage between 0 V to 15 V. This tunable filter can be used as a
much smaller alternative to physically large switched filter
banks and cavity tuned filters. This tunable filter has excellent
microphonics due to the monolithic design and provides a
dynamically adjustable solution in advanced communications
applications.
ADMV8432 Data Sheet
Rev. 0 | Page 2 of 17
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
High Band Specifications ............................................................ 3
Low Band Specifications .............................................................. 3
DC Characteristics ....................................................................... 4
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Interface Schematics .....................................................................7
Typical Performance Characteristics ..............................................8
High Band ......................................................................................8
Low Band ..................................................................................... 11
High Band and Low Band ......................................................... 14
Theory of Operation ...................................................................... 15
Applications Information .............................................................. 16
Typical Application Circuit ....................................................... 16
Power Supply Sequence ............................................................. 16
Outline Dimensions ....................................................................... 17
Ordering Guide .......................................................................... 17
REVISION HISTORY
7/2019—Revision 0: Initial Version
Data Sheet ADMV8432
Rev. 0 | Page 3 of 17
SPECIFICATIONS
HIGH BAND SPECIFICATIONS
TA = 25°C, VDD = 5 V, VEE = −5 V, and VCTL = 0 V, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE
fCENTER 24.2 29.5 GHz
3 dB Filter Bandwidth 17 %
REJECTION
Low-Side 0.75 × fCENTER GHz ≥30 dB
High-Side 1.25 × fCENTER GHz ≥30 dB
Re-Entry >40 GHz ≤30 dB
LOSS
Insertion Loss 9 dB
Return Loss 15 dB
DYNAMIC PERFORMANCE
Input Third-Order Intercept (IP3) 37 dBm
Input Power at 5° Shift in Insertion Phase 19 dBm VTUNE = 0 V
Group Delay Flatness 0.1 ns VTUNE = 0 V
Phase Sensitivity 0.6 Rad/V
Amplitude Settling 200 ns Time to settle to minimum insertion loss,
within ≤0.5 dB of static insertion loss
Drift Rate −2.7 MHz/°C
Tuning Sensitivity 580 MHz/V
RESIDUAL PHASE NOISE
1 MHz Offset −162 dBc/Hz
LOW BAND SPECIFICATIONS
TA = 25°C, VDD = 5 V, VEE = −5 V, and VCTL = 2.5 V, unless otherwise noted.
Table 2.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE
fCENTER 16.5 23.5 GHz
3 dB Filter Bandwidth 18 %
REJECTION
Low-Side 0.72 × fCENTER GHz ≥30 dB
High-Side 1.21 × fCENTER GHz ≥30 dB
Re-Entry >40 GHz ≤30 dB
LOSS
Insertion Loss 8 dB
Return Loss 10 dB
DYNAMIC PERFORMANCE
Input IP3 34 dBm
Input Power at 5° Shift in Insertion Phase 20 dBm VTUNE = 0 V
Group Delay Flatness 0.15 ns VTUNE = 0 V
Phase Sensitivity 0.8 Rad/V
Amplitude Settling 200 ns Time to settle to minimum insertion loss,
within ≤0.5 dB of static insertion loss
Drift Rate −1.4 MHz/°C
Tuning Sensitivity 530 MHz/V
ADMV8432 Data Sheet
Rev. 0 | Page 4 of 17
Parameter Min Typ Max Unit Test Conditions/Comments
RESIDUAL PHASE NOISE
1 MHz Offset −163 dBc/Hz
DC CHARACTERISTICS
Table 3.
Parameter Min Typ Max Unit Test Conditions/Comments
fCENTER TUNING
Voltage (VTUNE) 0 15 V
Current (ITUNE) ±1 µA
BAND CONTROL VOLTAGE (VCTL)
Input Voltage
Low 0 0.8 V 0 V for high band select
High 2 2.5 3 V 2.5 V for low band select
Current 1 µA
SUPPLY VOLTAGES
Negative (VEE) −5.5 −5 V
Positive (VDD) 5 5.5 V
SUPPLY CURRENTS
Negative (IEE) 0.7 mA
Positive (IDD) 1 mA
Data Sheet ADMV8432
Rev. 0 | Page 5 of 17
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Tuning
VTUNE −0.5 V to +15.5 V
ITUNE ±1 A
Supply Voltages
VEE −5.6 V
VDD 5.6 V
VCTL −0.5 V to VDD + 0.5 V
RF Input Power
2 GHz to 50 GHz 27 dBm
0.5 GHz to 2 GHz 19 dBm
0.1 GHz to 0.5 GHz 6 dBm
Hot Switch Input Power
2 GHz to 50 GHz 24 dBm
0.5 GHz to 2 GHz 16 dBm
0.1 GHz to 0.5 GHz 3 dBm
Temperature
Operating −40°C to +85°C
Storage Temperature −65°C to +150°C
Junction for 1 Million Mean Times
Between Failures (MTTF)
150°C
Nominal Junction (TPADDLE = 85°C,
Input Power (PIN) = 23 dBm)
150°C
Electrostatic Discharge (ESD) Rating
Human Body Model (HBM) 250 V
Field Induced Charged Device Model
(FICDM)
1250 V
Moisture Sensitivity Level (MSL) Rating MSL3
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
ADMV8432 Data Sheet
Rev. 0 | Page 6 of 17
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1NC
2NC
3NC
4GND
5RFIN
6GND
7NC
8NC
9NC
10NC
23 NC
24 NC
25 GND
26 RFOUT
27 GND
28 NC
29 NC
30 NC
22 NC
21 NC
11
VEE
12
GND
13
VDD
15
VCTL
17
NC
16
GND
18
GND
19
VTUNE
20
NC
14
NC
33 NC
34 NC
35 NC
36 NC
37 NC
38 NC
39 NC
40 NC
32 NC
31 NC
ADMV8432
TOP VIEW
(Not to Scale)
NOTES
1. NC = NO CONNECT. THESE PINS ARE NOT CONNECTED INTERNALLY.
ALL DATA SHOWN WITHIN WAS MEASURED WITH THESE PINS
CONNECTED TO RF AND DC
GROUND EXTERNALLY.
2. THE EXPOSED PAD IS INTERNALLY CONNECTED TO GROUND.
SOLDER THE EXPOSED PAD TO A LOW IMPEDANCE GROUND PLANE.
20804-002
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 to 3, 7 to 10, 14, 17, 20 to 24, 28 to 40 NC No Connect. These pins are not connected internally. All data shown within was
measured with these pins connected to RF and dc ground externally.
4, 6, 12, 16, 18, 25, 27 GND Ground. These pins must be connected to RF and dc ground.
5 RFIN
RF Input. This pin is dc-coupled and matched to 50 Ω. Blocking capacitors are
required if the RF line potential is not equal to 0 V.
11 VEE Negative Supply Voltage. VEE is −5 V.
13 VDD Positive Supply Voltage. VDD is 5 V.
15 VCTL
Control Voltage for Band Selection. The device is in the high band when the
voltage is 0 V and in the low band when the voltage is 2.5 V.
19 VTUNE
Center Frequency Control Voltage of the Band-Pass Filter. VTUNE can be varied
from 0 V to 15 V.
26 RFOUT
RF Output. This pin is dc-coupled and matched to 50 Ω. Blocking capacitors are
required if the RF line potential is not equal to 0 V.
EPAD
Exposed Pad. The exposed pad is internally connected to ground. Solder the
exposed pad to a low impedance ground plane.
Data Sheet ADMV8432
Rev. 0 | Page 7 of 17
INTERFACE SCHEMATICS
VCTL
VDD
20804-003
Figure 3. VCTL and VDD Interface Schematic
VTUNE
2.5Ω 125Ω
18pF 36pF
0.5nH
20804-004
Figure 4. VTUNE Interface Schematic
VEE
20804-005
Figure 5. VEE Interface Schematic
RFIN
50Ω
20804-006
Figure 6. RFIN Interface Schematic
RFOUT
50Ω
20804-007
Figure 7. RFOUT Interface Schematic
GND
20804-008
Figure 8. GND Interface Schematic
ADMV8432 Data Sheet
Rev. 0 | Page 8 of 17
TYPICAL PERFORMANCE CHARACTERISTICS
HIGH BAND
0
–70
–60
–50
–40
–30
–20
–10
0 5 10 15 20 25 30 35 40 45 50
INSERTION LOSS (dB)
BROADBAND RF FREQUENCY (GHz)
7V
0V
15V
20804-009
Figure 9. Insertion Loss vs. Broadband RF Frequency at Various VTUNE
Voltages
0
–18
–16
–14
–12
–10
–8
–6
–4
–2
15 20 25 30 35 40 45
INSERTION LOSS (dB)
RF FREQUENCY (GHz)
7V
0V
15V
20804-010
Figure 10. Insertion Loss vs. RF Frequency at Various Voltages
36
22
24
26
28
30
32
34
0151413121110987654321
f
CENTER (GHz)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-011
Figure 11. fCENTER vs. VTUNE at Various Temperatures
0
–40
–35
–30
–25
–20
–15
–10
–5
05045403530252015105
RETURN LOSS (dB)
BROADBAND RF FREQUENCY (GHz)
0V, S11
7V, S11
15V, S11
0V, S22
7V, S22
15V, S22
20804-012
Figure 12. Return Loss vs. Broadband RF Frequency at Various Voltages
0
–40
–35
–30
–25
–20
–15
–10
–5
15 454035302520
RETURN LOSS (dB)
RF FREQUENCY (GHz)
0V, S11
7V, S11
15V, S11
0V, S22
7V, S22
15V, S22
20804-013
Figure 13. Return Loss vs. RF Frequency at Various Voltages
–
4
–14
–12
–10
–8
–6
0151413121110987654321
INSERTION LOSS (dB)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-014
Figure 14. Insertion Loss vs. VTUNE at Various Temperatures
Data Sheet ADMV8432
Rev. 0 | Page 9 of 17
1.5
1.0
1.1
1.2
1.3
1.4
0151413121110987654321
HIGH-SIDE REJECTION RATIO (dB)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-015
Figure 15. High-Side Rejection vs. VTUNE at Various Temperatures
24
10
12
14
16
18
20
22
0151413121110987654321
3dB BANDWIDTH (%)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-016
Figure 16. 3 dB Bandwidth vs. VTUNE at Various Temperatures
1200
200
300
400
500
600
700
800
900
1000
1100
0151413121110987654321
TUNING SENSITIVITY (MHz/V)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-017
Figure 17. Tuning Sensitivity vs. VTUNE at Various Temperatures
1.0
0.5
0.6
0.7
0.8
0.9
0151413121110987654321
LOW-SIDE REJECTION RATIO (dB)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-018
Figure 18. Low-Side Rejection vs. VTUNE at Various Temperatures
45
10
15
20
25
30
35
40
0151413121110987654321
INPUT IP3 (dBm)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-019
Figure 19. Input IP3 vs. VTUNE at Various Temperatures
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0151413121110987654321
GROUP DELAY (ns)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-020
Figure 20. Group Delay vs. VTUNE at Various Temperatures
ADMV8432 Data Sheet
Rev. 0 | Page 10 of 17
0.7
0.2
0.3
0.4
0.5
0.6
20 40383634323028262422
GROUP DELAY (ns)
RF FREQUENCY (GHz)
7V
0V
15V
20804-021
Figure 21. Group Delay vs. RF Frequency at Various VTUNE Voltages
15
–15
–10
–5
0
5
10
02018161412108642
PHASE SHIFT (Degrees)
INPUT POWER (dBm)
0V 1V 3V
7V 10V 15V
20804-022
Figure 22. Phase Shift vs. Input Power at Various VTUNE Voltages
–
100
–170
–160
–150
–140
–130
–120
–110
100 10M1M100k10k1k
RESIDUAL PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
7V
0V
15V
20804-023
Figure 23. Residual Phase Noise vs. Offset Frequency at Various VTUNE
Voltages
32
22
24
26
28
30
2.0
0
0.4
0.8
1.2
1.6
0151296314118521310741
APPROXIMATE
f
CENTER
(GHz)
PHASE SENSITIVITY (Rad/V)
VTUNE (V)
APPROXIMATE
f
CENTER
(GHz)
PHASE SENSITIVITY (Rad/V)
2
0804-024
Figure 24. Approximate fCENTER and Phase Sensitivity vs. VTUNE
Data Sheet ADMV8432
Rev. 0 | Page 11 of 17
LOW BAND
0
–70
–60
–50
–40
–30
–20
–10
0 5 10 15 20 25 30 35 40 45 50
INSERTION LOSS (dB)
BROADBAND RF FREQUENCY (GHz)
7V
0V
15V
20804-025
Figure 25. Insertion Loss vs. Broadband RF Frequency for Various VTUNE
Voltages
0
–18
–16
–14
–12
–10
–8
–6
–4
–2
5 101520253035
INSERTION LOSS (dB)
RF FREQUENCY (GHz)
7V
0V
15V
20804-026
Figure 26. Insertion Loss vs. RF Frequency for Various VTUNE Voltages
26
12
14
16
18
20
22
24
0151413121110987654321
f
CENTER
(GHz)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-027
Figure 27. fCENTER vs. VTUNE at Various Temperatures
0
–40
–35
–30
–25
–20
–15
–10
–5
05045403530252015105
RETURN LOSS (dB)
BROADBAND RF FREQUENCY (GHz)
0V, S11
7V, S11
15V, S11
0V, S22
7V, S22
15V, S22
20804-028
Figure 28. Return Loss vs. Broadband RF Frequency for Various VTUNE
Voltages
0
–40
–35
–30
–25
–20
–15
–10
–5
5353025201510
RETURN LOSS (dB)
RF FREQUENCY (GHz)
0V, S11
7V, S11
15V, S11
0V, S22
7V, S22
15V, S22
20804-029
Figure 29. Return Loss vs. RF Frequency for Various VTUNE Voltages
–
4
–14
–12
–10
–8
–6
0151413121110987654321
INSERTION LOSS (dB)
VTUNE (V)
–40°C
+25°C
+85°C
20804-030
Figure 30. Insertion Loss vs. VTUNE at Various Temperatures
ADMV8432 Data Sheet
Rev. 0 | Page 12 of 17
1.5
1.0
1.1
1.2
1.3
1.4
0151413121110987654321
HIGH-SIDE REJECTION RATIO (dB)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-031
Figure 31. High-Side Rejection vs. VTUNE at Various Temperatures
24
10
12
14
16
18
20
22
0151413121110987654321
3dB BANDWIDTH (%)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-032
Figure 32. 3 dB Bandwidth vs. VTUNE at Various Temperatures
1200
200
300
400
500
600
700
800
900
1000
1100
0151413121110987654321
TUNING SENSITIVITY (MHz/V)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-033
Figure 33. Tuning Sensitivity vs. VTUNE at Various Temperatures
1.0
0.5
0.6
0.7
0.8
0.9
0151413121110987654321
LOW-SIDE REJECTION RATIO (dB)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-034
Figure 34. Low-Side Rejection vs. VTUNE at Various Temperatures
45
10
15
20
25
30
35
40
0151413121110987654321
INPUT IP3 (dBm)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-035
Figure 35. Input IP3 vs. VTUNE at Various Temperatures
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0151413121110987654321
GROUP DELAY (ns)
VTUNE (V)
–40°C
+25°C
+85°C
2
0804-036
Figure 36. Group Delay vs. VTUNE at Various Temperatures
Data Sheet ADMV8432
Rev. 0 | Page 13 of 17
0.7
0.2
0.3
0.4
0.5
0.6
10 30282624222018161412
GROUP DELAY (ns)
RF FREQUENCY (GHz)
7V
0V
15V
20804-037
Figure 37. Group Delay vs. RF Frequency at Various VTUNE Voltages
15
–15
–10
–5
0
5
10
02018161412108642
PHASE SHIFT (Degrees)
INPUT POWER (dBm)
0V 1V 3V
7V 10V 15V
20804-038
Figure 38. Phase Shift vs. Input Power at Various VTUNE Voltages
–
100
–170
–160
–150
–140
–130
–120
–110
100 10M1M100k10k1k
RESIDUAL PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
7V
0V
15V
20804-039
Figure 39. Residual Phase Noise vs. Offset Frequency at Various VTUNE
Voltages
24
14
16
18
20
22
2.0
0
0.4
0.8
1.2
1.6
0151296314118521310741
APPROXIMATE
f
CENTER
(GHz)
PHASE SENSITIVITY (Rad/V)
VTUNE (V)
APPROXIMATE
f
CENTER
(GHz)
PHASE SENSITIVITY (Rad/V)
2
0804-040
Figure 40. Approximate fCENTER and Phase Sensitivity vs. VTUNE
ADMV8432 Data Sheet
Rev. 0 | Page 14 of 17
HIGH BAND AND LOW BAND
36
12
14
16
18
20
22
24
26
28
30
32
34
0151413121110987654321
f
CENTER
(GHz)
VTUNE (V)
HIGH BAND
LOW BAND
20804-041
Figure 41. fCENTER vs. VTUNE
0
–70
–50
–60
–40
–30
–20
–10
05045403530252015105
BROADBAND INSERTION LOSS (dB)
RF FREQUENCY (GHz)
HIGH BAND, 0V
HIGH BAND, 7V
HIGH BAND, 15V
LOW BAND, 0V
LOW BAND, 7V
LOW BAND, 15V
20804-042
Figure 42. Broadband Insertion Loss vs. RF Frequency
–
4
–14
–12
–10
–8
–6
0151413121110987654321
INSERTION LOSS (dB)
VTUNE (V)
HIGH BAND
LOW BAND
20804-043
Figure 43. Insertion Loss vs. VTUNE
Data Sheet ADMV8432
Rev. 0 | Page 15 of 17
THEORY OF OPERATION
The ADMV8432 is a MMIC, band-pass filter that features a
user selectable pass-band frequency. To select the high band,
apply 0 V at VCTL, and to select the low band, apply 2.5 V at
VCTL. Varying the applied analog tuning voltage between 0 V
and 15 V at VTUNE varies the fCENTER from 16.5 GHz to
23.5 GHz for the low band and from 24.2 GHz to 29.5 GHz for
the high band.
ADMV8432 Data Sheet
Rev. 0 | Page 16 of 17
APPLICATIONS INFORMATION
C8
100pF
DNI
AGND
C9
0.01µF
DNI
AGND
C10
4.7µF
DNI
AGND
J4
RFOUT
DUT
AGND
23
1
4
J3 RFIN
THRU CAL
AGND
23
1
4
J1
DNI
AGND
23
1
4
J2
DNI
AGND
23
1
4
30
29
28
27
26
25
24
23
22
21
1
NC
2
NC
3
NC
4
GND
5
RFIN
6
GND
7
NC
8
NC
9
NC
10
NC
NC
NC
GND
RFOUT
GND
ADMV8432
NC
NC
NC
NC
NC
11
VEE
12
GND
13
VDD
15
VCTL
17
NC
16
GND
18
GND
19
VTUNE
20
NC
14
NC
33
NC
34
NC
35
NC
36
NC
37
NC
38
NC
39
NC
40
EPAD
NC
EPAD
32
NC
31
NC
C3
1000pF
R1
10kΩ
DNI
AGND
C1
0.1µF
AGND
AGND
C4
1000pF
AGND
C2
0.1µF
AGND
C5
100pF
AGND
C6
0.01µF
AGND
C7
4.7µF
VTUNE
GRN
VBW
ORG
DNI
+
1
VDD
RED
+5V
1
VCTL
YEL
GND
BLK
VEE
WHT
–5V
1
AGND
R2
10kΩ
DNI
AGND
+
AGND
AGND
1
20804-044
Figure 44. Typical Application Circuit
TYPICAL APPLICATION CIRCUIT
Figure 44 shows the typical application circuit for the
ADMV8432.
POWER SUPPLY SEQUENCE
The required power-up sequence is GND, VDD, VEE, VCTL,
and VTUNE. Deviations from this sequence may forward bias
the ESD protection structures and damage them.
Data Sheet ADMV8432
Rev. 0 | Page 17 of 17
OUTLINE DIMENSIONS
01-29-2019-A
0.50
BSC
BOTTOM VIEW
TOP VIEW
SIDE VIEW
EXPOSED
PAD
0.05 MAX
0.02 NOM
0.20 REF
4.50 REF
COPLANARITY
0.08
0.30
0.25
0.20
6.10
6.00 SQ
5.90
0.80
0.75
0.70
0.20 MIN
4.75
4.70 SQ
4.65
40
1
11 10
20
21
30
31
PKG-006061
SEATING
PLANE
PIN 1
INDICATORAREAOPTIONS
(SEEDETAILA)
DETAIL A
(JEDEC 95)
*COMPLIANT
TO
JEDEC STANDARDS MO-220-WJJD-5
WITH EXCEPTION TO LEAD LENGTH
PIN 1
INDICATOR
AREA
*0.35
0.30
0.25
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
Figure 45. 40-Lead Lead Frame Chip Scale Package [LFCSP]
6 mm × 6 mm Body and 0.75 mm Package Height
(CP-40-27)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
ADMV8432ACPZ −40°C to +85°C 40-Lead Lead Frame Chip Scale Package [LFCSP] CP-40-27
ADMV8432ACPZ-R5 −40°C to +85°C 40-Lead Lead Frame Chip Scale Package [LFCSP] CP-40-27
ADMV8432-EVALZ Evaluation Board
1 Z = RoHS Compliant Part.
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D20804-0-7/19(0)
