LB QH9G
1Version 1.3 | 2018-03-27
Produktdatenblatt | Version 1.1
www.osram-os.com
LB QH9G
CHIPLED® 0402
Applications
—Electronic Equipment
—Gaming, Amusement, Gambling
—Textile illumination
—White Goods
Features:
—Package: SMT package 0402, colorless diused resin
—Chip technology: InGaN on Sapphire
—Typ. Radiation: 115° (horizontal), 170° (vertical)
—Color:
λ
dom = 470 nm (● blue)
—Optical ecacy: 9.8 lm/W
—Corrosion Robustness Class: 3B
—ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM)
LB QH9G
3Version 1.3 | 2018-03-27
Maximum Ratings
Parameter Symbol Values
Operating Temperature Top min.
max.
-40 °C
85 °C
Storage Temperature Tstg min.
max.
-40 °C
85 °C
Junction Temperature Tjmax. 90 °C
Forward current
TA = 25 °C
IFmax. 15 mA
Surge Current
t ≤ 10 µs; D = 0.005 ; TA = 25 °C
IFS max. 100 mA
Reverse voltage 2)
TA = 25 °C
VRmax. 5 V
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM)
VESD 2 kV
LB QH9G
4Version 1.3 | 2018-03-27
Characteristics
IF = 5 mA; TA = 25 °C
Parameter Symbol Values
Peak Wavelength 3)
λ
peak typ. 465 nm
Dominant Wavelength 3)
λ
dom min.
typ.
max.
464 nm
470 nm
476 nm
Spectral Bandwidth at 50% Irel,max
∆λ
typ. 25 nm
Viewing angle at 50 % IV
values for 0°, 90°
2
φ
typ.
typ.
115 °
170 °
Forward Voltage 4)
IF = 5 mA
VFmin.
typ.
max.
2.60 V
2.85 V
3.10 V
Reverse current 2)
VR = 5 V
IRtyp.
max.
0.01 µA
10 µA
Real thermal resistance junction/ambient 5), 6) RthJA real typ.
max.
570 K / W
700 K / W
Real thermal resistance junction/solderpoint 5) RthJS real typ.
max.
350 K / W
480 K / W
LB QH9G
5Version 1.3 | 2018-03-27
Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 7)
IF = 5 mA IF = 5 mA IF = 5 mA
min. max. typ.
IvIv
Φ
V
N1 28.0 mcd 35.5 mcd 95.3 mlm
N2 35.5 mcd 45.0 mcd 120.8 mlm
P1 45.0 mcd 56.0 mcd 151.5 mlm
P2 56.0 mcd 71.0 mcd 190.5 mlm
Q1 71.0 mcd 90.0 mcd 241.5 mlm
Q2 90.0 mcd 112.0 mcd 303.0 mlm
R1 112.0 mcd 140.0 mcd 378.0 mlm
R2 140.0 mcd 180.0 mcd 480.0 mlm
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 5 mA IF = 5 mA
min. max.
VFVF
3X 2.60 V 2.70 V
3Y 2.70 V 2.80 V
3Z 2.80 V 2.90 V
4X 2.90 V 3.00 V
4Y 3.00 V 3.10 V
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
min. max.
λ
dom
λ
dom
3 464 nm 468 nm
4 468 nm 472 nm
5 472 nm 476 nm
LB QH9G
6Version 1.3 | 2018-03-27
Group Name on Label
Example: N1-3-3X
Brightness Wavelength Forward Voltage
N1 3 3X
LB QH9G
7Version 1.3 | 2018-03-27
40
0
400
20
60
80
rel
I
100
%
nm
λ
OHL04094
V
λ
450 500 550 600 650 700
blue
true green
Relative Spectral Emission 7)
Irel = f (
λ
); IF = 5 mA; TA = 25 °C
LB QH9G
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°
-20°
-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
ϕ[°]
0.0
0.2
0.4
0.6
0.8
1.0
I
rel
:0°
:90°
Radiation Characteristics 7)
Irel = f (
ϕ
); TA = 25 °C
LB QH9G
8Version 1.3 | 2018-03-27
OHL03549
(5 mA)
V
V
I
I
I
F
1
10
10-1
100
5
210
10 510mA10
Relative Luminous Intensity 7), 8)
Iv/Iv(5 mA) = f(IF); TA = 25 °C
OHL03541
mA
2.5
F
V
F
I
102
100
5
10
5
1
V3.5 4.534
Forward current 7), 8)
IF = f(VF); TA = 25 °C
LB Q39E
1
15
2
4
6
8
10
12
I
F
[
mA
]
-8
-6
-4
-2
0
2
4
6
8
∆λ
dom
[
nm
]
Dominant Wavelength 7)
∆λ
dom = f(IF); TA = 25 °C
LB QH9G
10 Version 1.3 | 2018-03-27
LT QH9G
020406080
T
A
[°C]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
I
F [mA]
Max. Permissible Forward Current
IF = f(T)
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TA = 85 °C
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TA = 25 °C
LB QH9G
13 Version 1.3 | 2018-03-27
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Prole Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C
2 3 K/s
Time tS
TSmin to TSmax
tS60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL217 °C
Time above liquidus temperature tL80 100 s
Peak temperature TP245 260 °C
Time within 5 °C of the specied peak
temperature TP - 5 K
tP10 20 30 s
Ramp-down rate*
TP to 100 °C
3 6 K/s
Time
25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation DT/Dt: Dt max. 5 s; fulllment for the whole T-range
LB QH9G
16 Version 1.3 | 2018-03-27
Barcode-Product-Label (BPL)
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
Dry Packing Process and Materials 9)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately after
bag opening.
Discard if circles overrun.
Avoid metal contact.
WET
Do not eat.
Comparator
check dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%
bake units
bake units
If wet,
change desiccant
If wet,
Humidity Indicator
MIL-I-8835
If wet,
Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
LB QH9G
17 Version 1.3 | 2018-03-27
Transportation Packing and Materials 9)
OHA02044
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
02
4 5
(Q)QTY:2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY:
2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
OSRAM
Packing
Sealing label
Barcode label
Moisture Level 3 Floor time 168 Hours Moisture Level 6Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
Barcode label
Dimensions of transportation box in mm
Width Length Height
200 ± 5 mm 195 ± 5 mm 30 ± 5 mm
LB QH9G
18 Version 1.3 | 2018-03-27
Chip Technology:
1: TSN
3: standard InGaN
4: AlGaAs
6: standard InGalP
E: ThinGaN & package with 8 kV
ESD stability
G: NOTA, Powerflip, ThinGaN
´
Encapsulant Type / Lens Properties
1: focusing lens (=20°)
7: clear resin or white volume conversion
8: white volume conversion
9: clear resin
Wavelength Emission Color Color coordinates according
(λdom typ.) CIE 1931/Emission color:
B: 470 nm blue W: white
S: 633 nm super red
T: 528 nm true green
Y: 587 nm yellow
A: 617 nm amber
R/J: 625 nm red
H: 645 nm hyper-red
O: 606 nm orange
G: 570 nm green
L: Light
emitting
diode
Package Type
Q: CHIPLED 0603 / 0402
R: CHIPLED 0805
N: CHIPLED 1206 /
CHIPLED with lens
Lead / Package Properties
1: footprint: 0603 / height: 0.6 mm
3: footprint: 0603 / height: 0.35 mm
9: standard
H: footprint: 0402 / height: 0.35 mm
Type Designation System
L B Q H 9 G
LB QH9G
19 Version 1.3 | 2018-03-27
Notes
The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of
lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specied in this
data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-
sure time, eye pupils, observation distance), it is assumed that no endangerment to the eye exists from
these devices. As a matter of principle, however, it should be mentioned that intense light sources have a
high secondary exposure potential due to their blinding eect. As is also true when viewing other bright light
sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-
tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this LED contain, in addition to other substances, metal lled materials including silver.
Metal lled materials can be aected by environments that contain traces of aggressive substances. There-
fore, we recommend that customers minimize LED exposure to aggressive substances during storage, pro-
duction, and use. LEDs that showed visible discoloration when tested using the described tests above did
show no performance deviations within failure limits during the stated test duration. Respective failure limits
are described in the IEC60810.
Based on very short life cycle times in chip technology this component is subject to frequent adaption to the
latest chip technology.
For further application related informations please visit www.osram-os.com/appnotes
LB QH9G
20 Version 1.3 | 2018-03-27
Disclaimer
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language word-
ings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please nd the latest version on the OSRAM OS webside.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest
sales oce.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For
packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Product safety devices/applications or medical devices/applications
OSRAM OS components are not developed, constructed or tested for the application as safety relevant
component or for the application in medical devices.
In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety
devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales
partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-
nate the customer-specic request between OSRAM OS and Buyer and/or Customer.
LB QH9G
21 Version 1.3 | 2018-03-27
Glossary
1) Brightness: Brightness groups are tested at a current pulse duration of 25 ms and a tolerance of
±11 %.
2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-
tion is not allowed.
3) Wavelength: Wavelengths are tested at a current pulse duration of 25 ms and a tolerance of ±1 nm.
4) Forward Voltage: Forward voltages are tested at a current pulse duration of 1 ms and a tolerance of
±0.1 V.
5) Thermal Resistance: Rth max is based on statistic values (6
σ
).
6) Thermal Resistance: RthJA results from mounting on PC board FR 4 (pad size ≥ 5 mm² per pad)
7) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data
or calculated correlations of technical parameters can only reect statistical gures. These do not nec-
essarily correspond to the actual parameters of each single product, which could dier from the typical
data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical
improvements, these typ. data will be changed without any further notice.
8) Characteristic curve: In the range where the line of the graph is broken, you must expect higher dier-
ences between single LEDs within one packing unit.
9) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specied with ±0.1 and
dimensions are specied in mm.
10) Tape and Reel: All dimensions and tolerances are specied acc. IEC 60286-3 and specied in mm.
LB QH9G
22 Version 1.3 | 2018-03-27
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
