Semiconductor Group 1
NPN Silicon Double Transistors BCV 61
5.91
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCV 61 A
BCV 61 B
BCV 61 C
Q62702-C2155
Q62702-C2156
Q62702-C2157
1Js
1Ks
1Ls
SOT-143
Parameter Symbol Values Unit
Collector-emitter voltage
(transistor T1) VCE0 30 V
Collector-base voltage (open emitter)
(transistor T1) VCB0 30
Junction temperature Tj150 ˚C
Total power dissipation, TS≤99 ˚C2) Ptot 300 mW
Storage temperature range Tstg – 65 … + 150
Collector current IC100 mA
Emitter-base voltage VEBS 6
Collector peak current ICM 200
Base peak current (transistor T1) IBM 200
Thermal Resistance
Junction - ambient2) Rth JA ≤ 240 K/W
Junction - soldering point Rth JS ≤ 170
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Preliminary Data
●To be used as a current mirror
●Good thermal coupling and VBE matching
●High current gain
●Low emitter-saturation voltage
Semiconductor Group 2
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
I
C = 0.1 mA, VCE = 5 V
I
C = 2 mA, VCE = 5 V BCV 61 A
BCV 61 B
BCV 61 C
VCollector-emitter breakdown voltage
I
C = 10 mA, IB = 0 V(BR)CE0 30 – –
nA
µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0 –
––
–15
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics for transistor T1
Collector-base breakdown voltage
I
C = 10 µA, IB = 0 V(BR)CB0 30 – –
Emitter-base breakdown voltage
I
E = 10 µA, IC = 0 V(BR)EBS 6––
mV
Collector-emitter saturation voltage1)
I
C = 10 mA, IB = 0.5 mA
I
C = 100 mA, IB = 5 mA
VCEsat –
–90
200 250
600
–hFE 100
110
200
420
–
180
290
520
220
450
800
Base-emitter saturation voltage1)
I
C = 10 mA, IC = 0.5 mA
I
C = 100 mA, IC = 5 mA
VBEsat –
–700
900 –
–
Base-emitter voltage
I
C = 2 mA, VCE = 5 V
I
C = 10 mA, VCE = 5 V
VBE 580
–660
–700
770
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 3
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VBase-emitter forward voltage
I
E = 10 µA
I
E = 250 mA
VBES 0.4
––
––
1.8
mAThermal coupling of transistor T1 and
transistor T21) T1: VCE = 5 V
Maximum current for thermal stability of IC1
IE2 –5–
DC characteristics for transistor T2
–Matching of transistor T1 and transistor T2
at IE2 = 0.5 mA and VCE1 = 5 V
TA = 25 ˚C
TA = 150 ˚C IC1 /IC2
IC1 /IC2 0.7
0.7 –
–1.3
1.3
UnitValuesParameter Symbol
min. typ. max.
MHzTransition frequency
I
C = 10 mA, VCE = 5 V, f = 100 MHz fT– 250 –
AC characteristics for transistor T1
pFCollector-base capacitance
VCB = 10 V, IC = iC = 0, f = 1 MHz Ccb –3–
Input capacitance
VEB = 0.5 V, IC = iC = 0, f = 1 MHz Cibo –8–
kΩInput impedance
I
C = 1 mA, VCE = 10 V, f = 1 kHz h11e – 4.5 –
dBNoise figure
I
C = 200 µA, VCE = 5 V, RS = 2 kΩ
f= 1 kHz, B = 200 Hz
F–2–
10–4
Open-circuit reverse voltage transfer ratio
I
C = 1 mA, VCE = 10 V, f = 1 kHz h12e –2–
–Short-circuit forward current transfer ratio
I
C = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 – 900
µSOpen-circuit output admittance
I
C = 1 mA, VCE = 10 V, f = 1 kHz h22e –30–
1) Without emitter resistor. Device mounted on alumina 15 mm ×16.5 mm ×0.7 mm.
Semiconductor Group 4
BCV 61
Test circuit for current matching
Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under
condition of IC1 /IE2 = 1.3
Note: Voltage drop at contacts: VCO < VT = 16 mV
2
3
Note: BCV 61 with emitter resistors
Semiconductor Group 5
BCV 61
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy Permissible pulse load Ptot max/Ptot DC = f (tp)
